\section{Introduction}
Let $M$ be a ($C^\infty$ smooth) real hypersurface in $\C^n$ and
let $p$ lie on $M$.
Let $r$ be a local defining function for $M$
near $p$ ($\nabla r\neq 0$ when $r=0$).
In \cite{Dan82}, \cite{Dan93},
the following invariant is introduced:
\begin{equation}
\Delta_1(M, p) : = \sup_{\gamma\in\Gamma}
\frac{\ord(r\circ \gamma)}{\ord(\gamma-p)},
\label{eqn:1.1}
\end{equation}
where $\Gamma$ denotes the set of (germs of) nonconstant
holomorphic mappings
$\gamma:(\C,0) \to (\C^n,p)$.
(For a $C^{\infty}$ mapping $h:\C\to\C$ or
$\C^n$ such that $h(0)=0$,
let $\ord(h)$ denote the order of vanishing of $h$ at $0$.)
The invariant $\Delta_1(M, p)$ is called
the {\it D'Angelo type} of $M$ at $p$.
We say that $M$ is {\it of finite type} at $p$ if
$\Delta_1(M,p)<\infty$ and {\it of infinite type}
at $p$ otherwise (the latter case will be denoted by
$\Delta_1(M,p)=\infty$).
The class of finite type plays crucial roles in
the study of the local regularity in
the $\bar{\partial}$-Neumann problem
over pseudoconvex domains $\Omega$ with smooth
boundary $\partial\Omega$.
Indeed, it was shown
by D. Catlin \cite{Cat83}, \cite{Cat87} that
$M=\partial\Omega$ is of finite type at $p$ if and only if
a local subelliptic estimate at $p$ holds.
From its importance,
real hypersurfaces of finite type
have been deeply investigated from various points of view.

On the other hand,
to understand the geometric properties of
real hypersurfaces of infinite type
is also an interesting subject
in the study of several complex variables.
These hypersurfaces contain some kind of strong flatness.
In order to describe the geometric structure of this flatness,
the situation of contact of holomorphic curves with the
respective hypersurface must be carefully observed.
In this paper, we mainly consider the following question:
\begin{question}
When does there exist a nonconstant holomorphic curve
$\gamma_{\infty}$
tangent to $M$ at $p$ to infinite order?
\end{question}

Since the condition of the
desired curve $\gamma_{\infty}$ in Question~1
can be written as
\begin{equation}\label{eqn:1.2}
(r\circ\gamma_{\infty})(t)=O(t^N) \quad
\mbox{
as $t\in\C \to 0$, for every $N\in\N$,}
\end{equation}
the condition $\Delta_1(M,p)=\infty$
is necessary for the existence of the curve $\gamma_{\infty}$.
It has been shown
in \cite{Lem86}, \cite{Dan93}, \cite{FoS12} that
when $M$ is real analytic, the above two conditions
are equivalent
(in this case, the curve $\gamma_{\infty}$
is contained in $M$).
Moreover, in the case of smooth $M$,
this equivalence is also shown
in the formal series sense
in \cite{FLZ14}, \cite{KiN15}.
But, in general, the sufficient direction is not true.
Indeed,
the nonexistense of the curve $\gamma_{\infty}$
in (\ref{eqn:1.2}) is shown in the case of
some real hypersurfaces constructed in
\cite{BlG77}, \cite{KiN15}, \cite{NgC19}, \cite{FoN20}.
Understanding flatness
on hypersurfaces of infinite type
has been recognized to be a delicate issue.

In this paper,
in order to investigate the flatness of real hypersurfaces,
we use not only holomorphic curves but also
{\it Newton polyhedra} of defining functions,
which plays important roles
in singularity theory (cf. \cite{AGV85}, \cite{AGV88}).
Approach from the viewpoint of singularity theory
is useful in the study of types
and there have been many works of the sort
(\cite{McN05}, \cite{Hei08}, \cite{FoS10},
\cite{FoS12}, \cite{Kam20}, etc.).

First, we consider the relationship among many kinds of
infinite type hypersurfaces.
Let
$\Gamma^{\rm reg}:=
\{\gamma\in\Gamma:{\rm ord}(\gamma)=1\}$
and define
$\Delta_1^{\rm reg}(M, p) : =
\sup_{\gamma\in\Gamma^{\rm reg}}
\{\ord(r\circ \gamma)\}$,
which is called {\it regular type} of $M$ at $p$.
Note that
$\Delta_1^{\rm reg}(M, p) \leq \Delta_1(M, p)$.

\begin{proposition}
Let us consider the following eight conditions for
a real hypersurface $M$ at $p$:
\begin{enumerate}
\item[(1)] $\Delta_1(M, p)=\infty$;
\item[(2)] $\Delta_1^{\rm reg}(M, p)=\infty$;
\item[(3)]
There exists a $\gamma\in\Gamma^{\rm reg}$
tangent to $M$ at $p$ to infinite order;
\item[(4)]
There exists a $\gamma\in\Gamma$
tangent to $M$ at $p$ to infinite order;
\item[(5)]
There exists a holomorphic coordinate
$(z)=(z_1,\ldots,z_n)$ at $p$
such that $p=0$ and
a defining function $r$ for $M$ on $(z)$ is not {\it convenient}
(see Section~2);
\item[(6)]
There exists a holomorphic coordinate $(z)$ at $p$
such that $p=0$ and
the Newton polyhedron
of a defining function
for $M$ on $(z)$ (see Section~2)
takes the form
${\mathcal N}_+(r)=
\{(\xi_1,\ldots,\xi_n)\in\R_+^n: \xi_n\geq 1 \}$;
\item[(7)]
The Bloom-Graham type of $M$ at $p$ is infinity
(i.e. there are complex submanifolds of codimension
one tangent to $M$ at $p$
to arbitrarily higher order);
\item[(8)]
$M$ is Levi-flat near $p$.
\end{enumerate}
Then, among the above eight conditions,
the following implications hold:
\begin{equation*}
\xymatrix{
&&(7)  \ar@{=>}[ld]  &&& \\
(1) \ar@{<=}[r]  & (2) \ar@{<=}[r] &
(3) \ar@{<=>}[r]  & (5) \ar@{<=}[r] &
(6) \ar@{<=}[r]  \ar@{=>}[llu] & (8).
 \\
&    (4) \ar@{=>}[lu] \ar@{<=}[ru] &  &  & &
  }
\end{equation*}
\end{proposition}

The proof of the above proposition will be given in Section~4.1.

\begin{remark}
In the above proposition,
for each implication with only one direction,
its opposite direction is not true
(see Remark~4.2 in Section~4 for details).
\end{remark}

The following theorem gives a sufficient condition for
the existence of the curve $\gamma_{\infty}$ in Question~1.
This condition is described by using Newton polyhedra
of defining functions for real hypersurfaces.

\begin{theorem}
If there exists an ${\mathcal N}$-canonical coordinate $(z)$ for $M$ at $p$,
then the five conditions {\rm (1)--(5)} are equivalent.
\end{theorem}

The definition of ${\mathcal N}$-{\it canonical coordinates} will
be given in Section 2 (Definition 2.3).
The proof of the above theorem will be given in Section~4.2.

The following corollary can be directly obtained
from Theorem~1.3.

\begin{corollary}
Suppose that $\Delta_1(M,p)=\infty$.
If there is no $\gamma\in\Gamma$
tangent to $M$ at $p$ to infinite order, then
$M$ does not admit any ${\mathcal N}$-canonical coordinates at $p$.
\end{corollary}

It is easy to check that the examples of hypersurface
constructed in
\cite{BlG77}, \cite{KiN15}, \cite{NgC19}, \cite{FoN20}
do not admit any ${\mathcal N}$-canonical coordinates.
More exactly, we will give equivalence conditions
in more restricted cases in Sections 5 and 6.

Next, it is seen in \cite{Kam20}
that when $M$ is the boundary of pseudoconvex
Reinhardt domains, $M$ always admits
an ${\mathcal N}$-canonical coordinate.
Therefore, Theorem~1.3 implies the following.

\begin{corollary}
Let $M$ be the boundary of pseudoconvex
Reinhardt domains (with smooth boundary)
and let $p$ lie in $M$.
If $\Delta_1(M,p)=\infty$, then
there exists a $\gamma\in\Gamma^{\rm reg}$
tangent to $M$ at $p$ to infinite order.
\end{corollary}

This paper is organized as follows.
In Section~2, we recall the concepts:
Newton polyhedra, ${\mathcal N}$-nondegeneracy condition
and ${\mathcal N}$-canonical coordinates,
which were introduced in \cite{Kam20}.
In Section~3, for the analysis later,
we prepare appropriate coordinates on which
hypersurfaces are expressed in clear form.
Section~4 is devoted to the proof of results given in the Introduction.
More precise results are given in
the two dimensional case in Section~5 and the higher dimensional
case under the Bloom-Graham infinity type assumption in Section 6.
Since the Bloom-Graham type is the same as the D'Angelo type
in the two-dimesional case,
some results in Section~5 can be considered as special cases
of those in Section~6.
But, they are separately explained to
make clear their difference.
Lastly, we consider open problems in Section~7.

{\it Notation, symbols and terminology.}\quad
\begin{itemize
\item
We denote
$\Z_+:=\{n\in\Z:n\geq 0\}$ and
$\R_+:=\{x\in\R:x \geq 0\}.$
\item
The multi-indices are used as follows.
For $z=(z_1,\ldots,z_n), \,\,
\bar{z}=(\bar{z}_1,\ldots,\bar{z}_n),
\in\C^n$,
$\a=(\a_1,\ldots,\a_n), \b=(\b_1,\ldots,\b_n)\in\Z_+^n$,
define
\begin{eqnarray*}
&&
z^{\a}:=z_1^{\a_1}\cdots z_n^{\a_n}, \,\,
\bar{z}^{\b}:=\bar{z}_1^{\b_1}\ldots\bar{z}_n^{\b_n}, \\
&&
|\a|:=\a_1+\cdots+\a_n, \quad
\a!:=\a_1 !\cdots \a_n!, \quad
0 !:=1, \\
&&
D^{\alpha}:=
\frac{\partial^{|\alpha|}}
{\partial z_1^{\alpha_1}\cdots \partial z_n^{\alpha_n}}, \quad
\bar{D}^{\beta}:=
\frac{{\partial}^{|\beta|}}
{\partial \bar{z}_1^{\beta_1}\cdots \partial \bar{z}_n^{\beta_n}}.
\end{eqnarray*}
\item
We always consider smooth functions,
mappings, real hypersurfaces and complex curves
as their respective germs without any mentioning.
The following rings of germs of $\C$-valued functions
are considered:
\begin{itemize}
\item
$C^{\infty}_0(\C^n)$
is the ring of germs of $C^{\infty}$ functions
at the origin in $\C^n$.
\item
${\mathcal O}_0(\C)$ is the ring of germs of
holomorphic functions at the origin in $\C$.
\end{itemize}
\item
We always take a {\it good} parametrization
for corves $\gamma\in\Gamma$
without any mentioning.
That is to say, a point on the curve, defined
by $t\mapsto \gamma(t)$,
corresponds to only one value of $t$.
For example, $(t,t^2)$ is good, but
$(t^2,t^4)$ is not good.
\item
We use the words {\it pure terms} for any harmonic
polynomial and {\it mixed terms}
for any sum of monomials that are
neither holomorphic nor anti-holomorphic.
\end{itemize}

\section{Newton polyhedra for real hypersurfaces}

Let us define the Newton polyhedron of
a real-valued smooth function $F$ defined near the origin
in $\C^n$.
The Taylor series expansion of $F$ at the origin is
\begin{equation}\label{eqn:2.1}
F(z,\bar{z}) \sim \sum_{\a,\, \b \in \Z_+^n}
C_{\a \b} z^\a \bar{z}^{\b} \quad \mbox{ with
$C_{\a \b} = \dfrac{1}{\a ! \b !}
D^{\alpha}\bar{D}^{\beta}F(0,0)$.}
\end{equation}
The {\it Newton polyhedron} of $F$ is defined by
\begin{equation*}
{\mathcal N}_+(F) =
\mbox{The convex hull of }
\left(\bigcup_{\a+\b\in S(F)}(\a+\b + \R_{+}^n)\right),
\end{equation*}
where $S(F)=\{\a+\b\in\Z_+^n:C_{\a \b}\neq 0\}.$
The {\it Newton diagram} ${\mathcal N}(F)$ of $F$ is defined to be
the union of the compact faces of ${\mathcal N}_+(F)$.
We use coordinates $(\xi)=(\xi_1,\ldots,\xi_n)$ for points in the plane
containing the Newton polyhedron.
The following classes of functions $F$
simply characterized by using their Newton polyhedra
often appear in this paper:
\begin{itemize}
\item
$F$ is called to be {\it flat} at $0$
if ${\mathcal N}_+(F)$ is an empty set.
\item
$F$ is called to be {\it convenient} at $0$
if ${\mathcal N}_+(F)$ meets every coordinate axis.
\end{itemize}

Let $(z)=(z_1,\ldots,z_n)$ be a holomorphic coordinate
around $p$ such that $p=0$.
Let $r$ be a local defining function for $M$ near $p$
on the coordinate $(z)$.
For a given tuple $(M,p;(z))$, we define
a quantity $\rho_1(M,p;(z))\in\Z_+ \cup\{\infty\}$ as follows.
If $r$ is convenient, then let
\begin{equation*}\label{eqn:}
\rho_1(M,p;(z)):=\max\{\rho_j(r):j=1,\ldots,n\},
\end{equation*}
where  $\rho_j(r)$ is the coordinate of
the point at which the Newton diagram ${\mathcal N}(r)$
intersects the $\xi_j$-axis.
Otherwise, let $\rho_1(M,p;(z)):=\infty$.
We remark that $\rho_1(M,p;(z))$ depends on
the chosen coordinate $(z)$, but it is independent of
the choice of defining functions after fixing a coordinate.
Considering the curves
$\gamma_j(t)=(0, \ldots, \stackrel{(j)}{t}, \ldots, 0)
\in\Gamma^{\rm reg}$ for $j=1,\ldots,n$,
we can see that the inequality
$
\rho_1(M,p;(z))\leq \Delta_1^{\rm reg}(M,p)
$
always holds.

Next, let us introduce an important concept
``${\mathcal N}$-nondegeneracy condition''
on a smooth function $F$ defined near the origin
in $\C^n$.

Let $\kappa$ be a compact face of ${\mathcal N}_+(F)$.
The $\kappa$-{\it part of} $F$ is the polynomial defined by
\begin{equation}\label{eqn:2.2}
F_{\kappa}(z,\bar{z})=
\sum_{\a+\b \in \kappa}
C_{\a \b} z^\a \bar{z}^{\b}.
\end{equation}
The set of holomorphic curves ${\Gamma}_{\kappa}$
is defined by
\begin{equation*}\label{eqn:1.7}
\begin{split}
{\Gamma}_{\kappa}:=
\{(c_1 t^{a_1},\ldots,c_n t^{a_n}):
c\in(\C\setminus\{0\})^n, t\in\C,
\mbox{ $a\in\N^n$ determines $\kappa$ }\},
\end{split}
\end{equation*}
where
$c=(c_1,\ldots,c_n)\in(\C\setminus\{0\})^n$,
$a=(a_1,\ldots,a_n)\in\N^n$ and
``$a\in\N^n$ determines $\kappa$'' means that
the set
$\{\xi\in{\mathcal N}_+(F):
\sum_{j=1}^n a_j \xi_j =l\}$
coincides with the face $\kappa$
for some $l\in\N$.
\begin{definition}
Let $\kappa$ be a compact face of ${\mathcal N}_+(F)$.
The $\kappa$-part $F_{\kappa}$ of $F$
is said to be {\it ${\mathcal N}$-nondegenerate} if
\begin{equation*}\label{eqn:1.8}
F_{\kappa}\circ \gamma \not\equiv 0
\quad
\mbox{ for any $\gamma\in {\Gamma}_{\kappa}$}.
\end{equation*}
A function $F$ is said to be {\it ${\mathcal N}$-nondegenerate},
if $F_{\kappa}$ is ${\mathcal N}$-nondegenerate
for every compact face
$\kappa$ of ${\mathcal N}_+(F)$.
\end{definition}
The above concept is analogous to the nondegeneracy
condition introduced by Kouchnirenko \cite{Kou76},
which plays important roles in the singularity theory.
Detailed properties of this condition
are explained in \cite{Kam20}.

\begin{definition}
A holomorphic coordinate $(z)$ at $p$ is said to be {\it canonical}
for $M$ at $p$ if a local defining function $r$ for $M$
on $(z)$ is ${\mathcal N}$-nondegenerate.
\end{definition}

The following relationship
\begin{equation}\label{eqn:2.3}
\Delta_1(M, p) \geq \Delta_1^{{\rm reg}}(M, p)
\geq \rho_1(M,p;(z))
\end{equation}
is always established for every coordinate $(z)$ at $p$.
The following theorem shows that the equalities
in (\ref{eqn:2.3}) are satisfied under
the ${\mathcal N}$-nondegeneracy condition.
\begin{theorem}[\cite{Kam20}]
\label{thm:2.3}
If there exists an ${\mathcal N}$-canonical coordinate $(z)$ at $p$,
then the following equalities hold:
\begin{equation}\label{eqn:2.4}
\Delta_1(M, p) = \Delta_1^{{\rm reg}}(M, p)=\rho_1(M,p;(z)).
\end{equation}
\end{theorem}
Note that the above theorem is valid for the infinite type case.
From the above theorem,
the existence of ${\mathcal N}$-canonical coordinates
implies that both values of
$\Delta_1(M, p)$ and $\Delta_1^{{\rm reg}}(M, p)$
can be directly seen from geometrical
Newton data of $M$ at $p$.

\section{Standard coordinates}

Let $M$ be a real hypersurface in $\C^{n+1}$
($n\geq 1$) and
let $p$ lie in $M$.

It follows from Taylor's formula that
there exists a holomorphic coordinate
$(z,w):=(z_1,\ldots,z_n,w)$ at $p$
on which a local defining function $r$ for $M$
is expressed near the origin
as in the following form:
\begin{equation}\label{eqn:3.1}
r(z,w,\bar{z},\bar{w})
=2{\rm Re}(w)+
F(z,\bar{z})+R_1(z,\bar{z})\cdot{\rm Im}(w)+
R_2(z,w,\bar{z},\bar{w}),
\end{equation}
where
\begin{enumerate}
\item
$F\in C^{\infty}_0(\C^n)$ satisfies that
$F(0,0)=0$ and $|\nabla F(0,0)|=0$;
\item
$R_1\in C^{\infty}_0(\C^n)$
and $R_2\in C^{\infty}_0(\C^{n+1})$.
Moreover, $R_1$, $R_2$ satisfies that
${\rm ord}(R_1)\geq 1$ and
$|R_2|\leq C |{\rm Im}(w)|^2$
near $(z,w)=0$ where $C$ is a positive constant
independent of $(z,w)$.
\end{enumerate}
Of course, there may be many such coordinates,
which are said to be {\it standard}
for $M$ at $p$.

Furthermore, if there exists
a holomorphic coordinate
$(z,w):=(z_1,\ldots,z_n,w)$ around $p$
on which a local defining function $r$ for $M$
is expressed near the origin
as in the {\it model} form:
\begin{equation}\label{eqn:3.2}
r(z,w,\bar{z},\bar{w})
=2{\rm Re}(w)+
F(z,\bar{z}),
\end{equation}
where $F$ is as in (\ref{eqn:3.1}),
then $(z,w)$ is called a
{\it good (standard) coordinate}
for $M$ at $p$.
Note that
good coordinates do not always exist
for all hypersurfaces.

\section{Proofs of results in the Introduction}

Let $M$ be a real hypersurface in $\C^n$ and
let $p$ lie in $M$.

From Theorem~2.3,
under the ${\mathcal N}$-nondegeneracy condition,
a defining function for $M$ is convenient
if and only if $M$ is of finite type at $p$.
Roughly speaking,
when $M$ does not satisfy the convenience condition,
$M$ contains a flat part in one direction.
The following lemma exactly explains such situation.

\begin{lemma}
Let $r$ be a local defining function for $M$ near $p$
on some holomorphic coordinate $(z)$.
Then the following four conditions are equivalent:
\begin{enumerate}
\item
$r$ is not convenient (i.e. $\rho_1(M,p;(z))=\infty$);
\item
There exists $k\in\{1,\ldots,n\}$ such that
${\mathcal N}_+(r)$ does not intersect $\xi_k$-axis;
\item
There exists $k\in\{1,\ldots,n\}$ such that
the Taylor series of $r$ does not contain
any term consisting of $z_k$ and $\bar{z}_k$ only;
\item
There exists
$k\in\{1,\ldots,n\}$ such that
$(r\circ\gamma_k)(t)=O(t^N)$
for every $N\in\N$, where
$\gamma_k=
(0,\ldots,\stackrel{(k)}{t},\ldots,0)\in
\Gamma^{\rm reg}$.
\end{enumerate}
\end{lemma}

The following lemma expresses a property of
flat hypersurfaces by using the language of Newton polyhedra.

\begin{lemma}
The following two conditions are equivalent:
\begin{enumerate}
\item
There exists a standard coordinate for $M$ at $p$
such that $F$ in (\ref{eqn:3.1}) is flat
at the origin;
\item
There exists a holomorphic coordinate $(z)$ at $p$
such that $p=0$ and
the Newton polyhedron
of a defining function $r$
for $M$ on $(z)$ takes the form:
${\mathcal N}_+(r)=
\{(\xi_1,\ldots,\xi_n)\in\R_+^n: \xi_n\geq 1 \}$.
\end{enumerate}
\end{lemma}

Since the above two lemmas are easy,
their proofs are omitted.

\subsection{Proof of Proposition~1.1}

(3) $\Longleftrightarrow$ (5)
was stated in Lemma~4.1.
(6) $\Longrightarrow$ (7)
is easy to see from Lemma~4.2.
(7) $\Longrightarrow$ (2)
is shown in \cite{FoN20}.
(Lemma~5 in \cite{FoN20} states
(7) $\Longrightarrow$ (1), but
its proof actually implies the above stronger implication.)
The other implications are obvious.

\begin{remark}
Let us consider the converse of each implication
in Proposition~1.1.
We give an example of the hypersurface
showing that the converse does not hold
in the implication with only one direction.
All our examples of hypersurface $M$ in $\C^{n+1}$
($n\in\N$) are pseudoconvex and admit a good coordinate,
i.e.,
$M$ is locally expressed as in the model form:
$
2{\rm Re}(w)+F(z,\bar{z})=0,
$ as in (\ref{eqn:3.2}).
Thus,
we only write a function $F(z,\bar{z})$
for each case.
In the two-dimensional case,
the converses of some implications are also true
(see Section~5).
In these cases,
counterexamples must be constructed
in $\C^n$ with $n\geq 3$.

\begin{itemize}
\item ((1) $\not\Rightarrow$ (2)) \quad
$F(z,\bar{z})=
|z_1^3-z_2^2|^2+|z_3|^2+\cdots+|z_n|^2$ \quad
($n\geq 2$);
\item ((2) $\not\Rightarrow$ (3)) \quad
$F(z,\bar{z})=
f(z_1,\bar{z}_1)+|z_2|^2+\cdots+|z_n|^2$ \quad
($n\in\N$);
\item ((1) $\not\Rightarrow$ (4))  \quad
$F(z,\bar{z})=
f(z_1,\bar{z}_1)+|z_2|^2+\cdots+|z_n|^2$
 \quad
($n\in\N$);
\item ((4) $\not\Rightarrow$ (3)) \quad
$F(z,\bar{z})=
|z_1^3-z_2^2|^2+|z_3|^2+\cdots+|z_n|^2$ \quad
($n\geq 2$);
\item ((5) $\not\Rightarrow$ (6))  \quad
$F(z,\bar{z})=|z_n|^2$ \quad
($n\geq 2$);
\item ((2) $\not\Rightarrow$ (7)) \quad
$F(z,\bar{z})=|z_n|^2$ \quad
($n\geq 2$);
\item ((7) $\not\Rightarrow$ (6))  \quad
$F(z,\bar{z})=f(z_n,\bar{z}_n)$ \quad
($n\in\N$);
\item ((6) $\not\Rightarrow$ (8)) \quad
$F(z,\bar{z})=
\exp(-|z_n|^{-2})$ \quad
($n\in\N$).
\end{itemize}
Here $f\in C_0^{\infty}(\C)$ is a subharmonic
function admitting a divergent Taylor series at the origin.
It was constructed in \cite{FoN20}
(see Remark~5.8).

It is shown in \cite{KiN15}, \cite{NgC19}
(see also Corollary~6.4 in this paper)
that the second example shows
(2) $\not\Rightarrow$ (3) and
(1) $\not\Rightarrow$ (4) in the two-dimensional case.
The higher dimensional case can be easily shown.
It is easy to check that the other hypersurfaces
are counterexamples.

\end{remark}

\subsection{Proof of Theorem~1.3}

It suffices to show the implication: (1) $\Longrightarrow$ (5).

Let $(z)$ be an ${\mathcal N}$-canonical coordinate for $M$ at $p$
and let $r$ be a local defining function for $M$ near $p$
on the coordinate $(z)$.
From Theorem~2.3,
the condition (1) implies $\rho_1(M,p;(z))=\infty$,
which is equivalent to the condition (5) from Lemma~4.1.

\section{Two dimensional case}

In this section,
we more precisely consider Question~1 in the Introduction
in the case when a real hypersurface $M$ is in $\C^2$.
Let $p\in M$.

In the two dimensional case,
many implications in Proposition~1.1 can be refined
by equivalences.

\begin{proposition}
Let $M$ be a real hypersurface in $\C^2$ and
let $p$ lie in $M$.
Among the above eight conditions for $M$ at $p$
in Proposition~1.1,
the following implications hold:
\begin{equation*}
\xymatrix{
&&(7)  \ar@{<=>}[ld]  &&& \\
(1) \ar@{<=>}[r]  & (2) \ar@{<=}[r] &
(3) \ar@{<=>}[r]  & (5) \ar@{<=>}[r] &
(6) \ar@{<=}[r]  \ar@{=>}[llu] & (8).
 \\
&    (4) \ar@{=>}[lu] \ar@{<=>}[ru] &  &  & &
  }
\end{equation*}
\end{proposition}

\begin{proof}
(5) $\Longrightarrow$ (6) is obvious.
It is known in \cite{Dan93} that
(1), (2), (7) are equivalent.
(4) $\Longrightarrow$ (3)
will be shown in Lemma~5.2, below.
\end{proof}

\begin{lemma}
If $\gamma\in\Gamma$ is tangent to
$M\subset \C^2$ at $p$
to infinite order,
then $\gamma\in\Gamma^{\rm reg}$.
\end{lemma}

\begin{proof}
Let $(z,w)$ be a standard coordinate for $M$
at $p$ such that $M$ is expressed as in (\ref{eqn:3.1}).

First, if $F$ is flat at $0$, then the curve $\gamma$,
satisfying
$(r\circ\gamma)(t)=O(t^N)$ for every $N\in\N$,
essentially takes the form:
$\gamma(t)=(t,0)$.
This curve is regular.

Next, let us consider the case when ${\rm ord}(F)=m$
with some $m\in\N$.
In this case, the Newton polyhedron of $r$ takes
the form
${\mathcal N}_+(r)=
\{\xi\in\R_+^2:\xi_1/m+\xi_2\geq 1\}$.
Let
$\kappa:=\{\xi\in\R_+^2:\xi_1/m+\xi_2= 1\}$,
which is the only compact facet of ${\mathcal N}_+(r)$.
If $r_{\kappa}$ were ${\mathcal N}$-nondegenerate,
then Theorem~2.3 implies $\Delta_1(M,p)=m<\infty$,
which is a contradiction.
If $r_{\kappa}$ is not ${\mathcal N}$-nondegenerate,
then a desired curve must be written in the form
$\gamma(t)=(t,ct^m+O(t^{m+1}))$ with $c\neq 0$
from the definition of the ${\mathcal N}$-nondegeneracy.
This curve is also regular.
\end{proof}

From Theorem~2.3,
we can see the following.

\begin{theorem}
Let $M\subset\C^2$.
If there exists an ${\mathcal N}$-canonical coordinate
for $M$ at $p$, then
the seven conditions (1)--(7) in Proposition~5.1
are equivalent.
\end{theorem}

The following lemma is essentially the same
as Theorem 2 in \cite{KiN15}
(see also \cite{Kol05}).

\begin{lemma}
Let $M\subset\C^2$.
If $\Delta_1(M,p)=\infty$, then
the Taylor series of $F$ in (\ref{eqn:3.1})
at the origin consists of only pure terms
on every standard coordinate.
\end{lemma}

\begin{proof}
Let us assume the existence of
a standard coordinate $(z,w)$
on which
the Taylor series of $F$
contains a mixed term.
Let $m$ be the minimum order of the
mixed terms of Taylor series of $F$ and
let $p_m(z,\bar{z})$ denote the sum of
the mixed terms of order $m$.

It is easy to construct a standard coordinate $(z,w^*)$
on which $M$ can be expressed by the equation:
\begin{equation*}
2{\rm Re}(w^*)+p_m(z,\bar{z})+Q(z,\bar{z})+
R_1^*\cdot {\rm Im}(w^*)
+R_2^*=0,
\end{equation*}
where $Q\in C_0^{\infty}(\C)$ with
${\rm ord}(Q)\geq m+1$ and
$R_1^*,R_2^*$ have the same properties as those of
$R_1,R_2$ in (\ref{eqn:3.1}), respectively.
Since $2{\rm Re}(w^*)+p_m(z)$ is
${\mathcal N}$-nondegenerate,
the above $(z,w^*)$ is canonical for $M$ at $p$.
It follows from Theorem 2.3 that
$\Delta_1(M,p)=m<\infty$, which is a contradiction.
\end{proof}

From the above lemma,
when $\Delta_1(M,p)=\infty$,
the Taylor series of $F$ can be expressed as
$2\sum_{j=2}^{\infty} {\rm Re}(c_j z^j)$
where $c_j\in\C$.
When the hypersurface $M$ and $p\in M$
are fixed,
the sequence of complex numbers
$\{c_j\}_{j\in\N}$ is determined by
the chosen standard coordinates $(z,w)$ only.
For a given coordinate $(z,w)$,
we define the formal power series:
\begin{equation}\label{eqn:5.1}
{\mathcal S}(z)=
\sum_{j=2}^{\infty} c_j z^j
\quad (z\in\C).
\end{equation}
If $M$ is real analytic, then
the series ${\mathcal S}(z)$
converges near the origin.
But,
its converse is not always true.
From Cauchy-Hadamard's formula,
positivity of the convergence radius of the power series
${\mathcal S}(z)$ is
equivalent to the condition
$\limsup_{j\to\infty} |c_j|^{1/j}<\infty$.

Hereafter in this section,
we only consider the case when
the hypersurface admits a good coordinate at $p$.
That is to say, $M$ can be expressed as in the model form
\begin{equation}\label{eqn:5.2}
r(z,w,\bar{z},\bar{w})=2{\rm Re}(w)+F(z,\bar{z})=0,
\end{equation}
where $F$ is the same as that in (\ref{eqn:3.1}).

The following theorem gives equivalence conditions for
Question~1 in the Introduction
in the two-dimensional model case.

\begin{theorem}
Let $M$ be a real hypersurface in $\C^2$
admitting a good coordinate at $p$ as in (\ref{eqn:5.2}).
If $\Delta_1(M,p)=\infty$, then
the following three conditions are equivalent.
\begin{enumerate}
\item
There exists a $\gamma\in\Gamma^{\rm reg}$
tangent to $M$ at $p$ to infinite order;
\item
There exists a good coordinate $(z,w)$
for $M$ at $p$ on which
$F$ is flat;
\item
There exists a good coordinate $(z,w)$
for $M$ at $p$ such that the convergence radius of
the power series
${\mathcal S}(z)$ in (\ref{eqn:5.1}) is
positive.
\end{enumerate}
\end{theorem}

\begin{proof
(ii) $\Longrightarrow$ (i) and
(ii) $\Longrightarrow$ (iii) are obvious.

First, let us show (iii) $\Longrightarrow$ (ii).
From (iii),
the power series
${\mathcal S}(z)$
can be
regarded as a holomorphic function defined
on some open neighborhood of $z=0$.
Putting $w^*=w-{\mathcal S}(z)$,
we can express the hypersurface $M$ on the good coordinate
$(z,w^*)$ by the equation
$
2{\rm Re}(w^*)+F^*(z,\bar{z})=0$,
where $
F^*(z,\bar{z})=
F(z,\bar{z})-2{\rm Re}({\mathcal S}(z))$.
Since $F(z)-2{\rm Re}({\mathcal S}(z))$ is flat at $z=0$,
the existence of coordinate in (ii) is shown.

Next, let us show (i) $\Longrightarrow$ (iii).
We may assume that the regular holomorphic curve
in (i) can be expressed as
$\gamma(t)=(t,-h(t))$
on a good coordinates $(z,w)$ satisfying that
$(r\circ \gamma)(t)=O(t^N)$ for every $N\in\N$.
Here $h$ is holomorphic  near the origin
and satisfies $h(0)=0$.
Let $\sum_{j=1}^{\infty} a_j t^j$ be
the Taylor series of $h$ at $t=0$,
which converges on an open neighborhood of $t=0$.
Now, after the first finite sum of the Taylor series
of $h$ and $F$
are substituted into the equations
$(r\circ \gamma)(t)=
-2{\rm Re}(h(t))+F(t,\bar{t})=0$, we have
\begin{equation*}
{\rm Re}\left(
\sum_{j=1}^{N}a_j t^j
\right)-
\sum_{j=2}^{N} {\rm Re}(c_j t^j)=O(t^{N+1}),
\end{equation*}
for every $N\in\N$.
From the above equality, we can see that
$c_j=a_j$ for every $j\in\N$.
This means that ${\mathcal S}(t)$ converges
and ${\mathcal S}(t)=h(t)$
on an open neighborhood of $t=0$.
\end{proof}

\begin{remark}
The condition (iii) in Theorem~5.5 is weaker
than the condition: $M$ is real analytic near $p$.
Indeed, as mentioned in the Introduction,
the real analyticity of $M$ implies the existence
of desired curves in (i) in the theorem
(\cite{Lem86}, \cite{Dan93}, \cite{FoS12}).
The hypersurface $M$ defined by
$2{\rm Re}(w)+e^{-1/|z|^2}=0$
with $p=(0,0)$ satisfies the conditions (ii) and (iii),
but $M$ is not real analytic at $p$.
\end{remark}

In \cite{BlG77}, \cite{KiN15}, \cite{NgC19},
smooth real hypersurfaces in $\C^2$
admitting no curve $\gamma_{\infty}$ in
(\ref{eqn:1.2}) are constructed.
It follows from Theorem~5.5 that
there are many such hypersurfaces.

\begin{corollary}
Let $M$ be a real hypersurface defined by
the equation (\ref{eqn:5.2}).
If $\Delta_1(M,p)=\infty$,
then the following two conditions are equivalent.
\begin{enumerate}
\item
There is no $\gamma\in\Gamma$
tangent to $M$ at $0$ to infinite order;
\item
The convergence radius of the power series
${\mathcal S}(z)$ equals zero.
\end{enumerate}
\end{corollary}

\begin{remark}
From (ii) in the above corollary,
it is quite easy to construct smooth hypersurfaces
satisfying the condition (i).
Let $\{c_j\}_{j\in\N}$ be a sequence of
complex numbers such that
the convergence radius of
$\sum_{j=2}^{\infty}c_j z^j$
is zero.
By using a classical lemma of E. Borel
(cf. \cite{Nar85}, Theorem~1.5.4,
or  \cite{Hor90}, Theorem~1.2.6),
for the formal power series of $(x,y)\in\R^2$
($z=x+iy$):
\begin{equation}\label{eqn:5.3}
\sum_{j=2}^{\infty} {\rm Re}(c_j z^j)
=\sum_{(j,k)\in\Z_+^2}
C_{jk}x^j y^k \mbox{\,\, with $C_{jk}\in\R$},
\end{equation}
there exists a real-valued $C^{\infty}$ function $f$
defined near the origin in $\R^2$
whose Taylor series at the origin is
(\ref{eqn:5.3}).
Then the real hypersurface defined by
$2{\rm Re}(w)+f(z,\bar{z})=0$
satisfies the condition (i).
We remark that the above hypersurface cannot always be
uniquely determined from the sequence
$\{c_j\}_{j\in\N}$.

In \cite{KiN15}, \cite{NgC19},
similar examples of hypersurfaces have been found.
Since their constructions
do not use a lemma of E. Borel directly,
they look much more elaborate.

Furthermore,
it is shown in \cite{FoN20} that
when $\{c_j\}_{j\in\N}$ is an increasing sequence of positive real
numbers, the above function $f$ can be selected to be
a subharmonic function on $\C$.
Therefore, there are many pseudoconvex real hypersurfaces
satisfying the condition (i) in the corollary.
\end{remark}

\section{Higher dimensional case}

In this section, we generalize results
given in the previous section to the higher dimensional case.
Let $M$ be a real hypersurface in $\C^{n+1}$
($n\geq 1$)
and let $p$ lie in $M$.
In this section, we always consider the case when
$M$ is of Bloom-Graham infinite type at $p$.
First, let us recall the exact definition
of the Bloom-Graham type in \cite{BlG77}.
We remark that the following definition
is an equivalence condition for their original type.
This equivalence is also shown in \cite{BlG77}.

\begin{definition}
Let ${\mathcal X}$ be a set of
$n$-dimensional complex submanifolds
containing $p$.
We say that
the Bloom-Graham type of $M$ is $m$ $(<\infty)$,
if there is a $X\in{\mathcal X}$ tangent to $M$
at $p$ to order $m$ but no $X\in{\mathcal X}$
tangent to a higher order.
Otherwise, we say that
the Bloom-Graham type of $M$ is infinity at $p$
(see the condition (7) in Proposition~1.1).
\end{definition}

In the case of Bloom-Graham infinity type,
a similar property to Lemma~5.4 can be seen.
\begin{lemma}
If the Bloom-Graham type of $M$ at $p$ is infinity, then
the Taylor series of $F$ in (\ref{eqn:3.1})
at the origin consists of only pure terms
on every standard coordinate (see Section~3).
\end{lemma}

\begin{proof}
Let us assume the existence of
a standard coordinate $(z,w)$
on which
the Taylor series of $F$
contains a mixed term.
Let $m$ be the minimum order of the
mixed terms of Taylor series of $F$.

It is easy to construct
a new standard coordinate $(z,w^*)$
on which $M$ can be expressed by the equation
\begin{equation*}
2{\rm Re}(w^*)+P_m(z,\bar{z})+Q(z,\bar{z})+
R_1^*\cdot {\rm Im}(w^*)
+R_2^*=0,
\end{equation*}
where
$P_m$ is a non-zero mixed homogenous polynomial of degree $m$
without pure terms,
$Q\in C_0^{\infty}(\C^n)$ with
${\rm ord}(Q)\geq m+1$ and
$R_1^*,R_2^*$ have the same properties as those of
$R_1,R_2$ in (\ref{eqn:3.1}), respectively.
It follows from the definition that the Bloom-Graham type
of $M$ at $p$ equals $m<\infty$, which is a contradiction.
\end{proof}

From Lemma~6.2,
the Taylor series of $F$ at the origin in $\C^n$
can be expressed as
$2\sum_{\alpha\in\Z_+^n}
{\rm Re}(c_{\alpha} z^{\alpha})$
where $c_{\alpha}\in\C$.
When the hypersurface $M$ and $p\in M$
are fixed,
the sequence $\{c_{\alpha}\}_{\alpha\in\Z_+^n}$
is determined by
the chosen standard coordinates $(z,w)$.
For a given coordinate $(z,w)$,
we define the formal power series
\begin{equation}\label{eqn:6.1}
{\mathcal S}(z)=
\sum_{\alpha\in\Z_+^n} c_{\alpha} z^{\alpha}
\quad (z\in\C^n).
\end{equation}

Hereafter in this section,
we only consider the case when
the hypersurface admits a good coordinate at $p$.
That is to say, $M$ can be expressed as in the model form
\begin{equation}\label{eqn:6.2}
r(z,w,\bar{z},\bar{w})=2{\rm Re}(w)+F(z,\bar{z})=0,
\end{equation}
where $F$ is the same as in (\ref{eqn:3.1}).

Let $\hat{\Gamma}$ be the set
of (germs of) nonconstant holomorphic curves
$\hat{\gamma}=
(\hat{\gamma}_1,\ldots,\hat{\gamma}_n)
:(\C,0) \to (\C^n,0)$.
Let $\sum_{k=1}^{\infty} a_{jk} t^k$ be
the Taylor series of $\hat{\gamma}_j$
for $j=1,\ldots,n$.
After these Taylor series are substituted into
${\mathcal S}(z_1,\ldots,z_n)$ with
$z_j=\hat{\gamma}_j(t)$,
a formal computation gives the formal power series,
denoted by $({\mathcal S}\circ\hat{\gamma})(t)$,
in the following.
\begin{equation}\label{eqn:6.3}
({\mathcal S}\circ\hat{\gamma})(t)
={\mathcal S}
(\hat{\gamma}_1(t),\ldots,\hat{\gamma}_n(t))
=\sum_{\alpha\in\Z_+^n} c_{\alpha}
\prod_{j=1}^n
\left(
\sum_{k=1}^{\infty}a_{jk} t^k
\right)^{\alpha_j}
=:\sum_{j=2}^{\infty}c_j t^j.
\end{equation}
The relationship between $F$ and ${\mathcal S}$
implies that
\begin{equation}\label{eqn:6.4}
(F\circ\hat{\gamma})(t)=
2\sum_{j=2}^{N} {\rm Re}(c_j t^j)+O(t^{N+1}),
\end{equation}
for every $N\in\N$.

The following theorem is a natural generalization
of Theorem~5.6.
Let $\Gamma$ denote the set of nonconstant
holomorphic mappings
$\gamma:(\C,0) \to (\C^{n+1},p)$.

\begin{theorem}
Let $M$ be a real hypersurface in $\C^{n+1}$ ($n\geq 1$)
admitting a good coordinate at $p$ as in (\ref{eqn:6.2}).
If the Bloom-Graham type of $M$ at $p$ is infinity, then
the following three conditions are equivalent.
\begin{enumerate}
\item
There exists a $\gamma\in\Gamma$
tangent to $M$ at $p$ to infinite order;
\item
There exists a good coordinate $(z,w)$
for $M$ at $p$ on which
$(F\circ\hat{\gamma})(t)$ is flat at $t=0$ for some
$\hat{\gamma}\in\hat{\Gamma}$;
\item
There exists a good coordinate $(z,w)$
for $M$ at $p$ such that the formal power series
$({\mathcal S}\circ\hat{\gamma})(t)$
in (\ref{eqn:6.3})
converges on an open neighborhood of $t=0$
for some $\hat{\gamma}\in\hat{\Gamma}$,
where
${\mathcal S}$ is as in (\ref{eqn:6.1}).
\end{enumerate}
\end{theorem}

\begin{proof}
First, let us show (ii) $\Longrightarrow$ (i).
Let $\gamma(t)=(\hat{\gamma}(t),0)\in\Gamma$,
where $\hat{\gamma}$ is as in (ii),
and let $r$ be a defining function for $M$
as in (\ref{eqn:6.2}).
Then we have
$
(r\circ \gamma)(t)=(F\circ\hat{\gamma})(t)
=O(t^N)$
for every $N\in\N$, which implies (i).

Second, let us show (iii) $\Longrightarrow$ (ii).
Let $I:=\{j:\hat{\gamma}_j\not\equiv 0\}$.
Define the map $T_{I}:\C^n\to\C^n$
by $(w_1,\ldots,w_n)=T_I(z_1,\ldots,z_n)$
where $w_j=z_j$ if $j\in I$ and $w_j=0$ otherwise.
It follows from Abel's lemma (cf. \cite{FrG02}) that
the convergence of
$({\mathcal S}\circ\hat{\gamma})(t)$ for some $t\neq 0$
implies that the power series $({\mathcal S}\circ T_I)(z)$
converges on an open neighborhood of $z=0$,
which means that ${\mathcal S}\circ T_I$
can be regarded as a holomorphic function there.
Letting $w^*=w-({\mathcal S}\circ T_I)(z)$,
we can express the hypersurface $M$ on the good coordinate
$(z,w^*)$ by the equation:
$
2{\rm Re}(w^*)+F^*(z,\bar{z})=0$,
where
$F^*(z,\bar{z})=F(z,\bar{z})-
2{\rm Re}(({\mathcal S}\circ T_I)(z))$.
By using the equality
${\mathcal S}\circ T_I \circ \hat{\gamma}=
{\mathcal S}\circ \hat{\gamma}$,
$(F^*\circ\hat{\gamma})(t)=(F\circ\hat{\gamma})(t)-
2{\rm Re}({\mathcal S}\circ\hat{\gamma})(t)$
is flat at $t=0$,
which implies (ii).

Third, let us show (i) $\Longrightarrow$ (iii).
We may assume that a holomorphic curve
in (i) can be expressed as
$\gamma(t)=(\hat{\gamma}(t),-h(t))$,
where $\hat{\gamma}\in\hat{\Gamma}$ and
$h\in{\mathcal O}_0(\C)$
with $h(0)=0$,
on a good coordinates $(z,w)$.
Note that (i) is equivalent to the condition
$(r\circ \gamma)(t)=O(t^N)$ for every $N\in\N$.
Let $\sum_{j=1}^{\infty} a_j t^j$ be
the Taylor series of $h$ at $t=0$,
which converges on an open neighborhood of $t=0$.
Now, after the first finite sum of the Taylor series
of $h$ and $F\circ\hat{\gamma}$ in (\ref{eqn:6.4})
are substituted into the equations
$(r\circ \gamma)(t)=
-2{\rm Re}(h(t))+
(F\circ\hat{\gamma})(t)=
O(t^N)$ for every $N\in\N$,
we have
\begin{equation*}
{\rm Re}\left(
\sum_{j=1}^{N}a_j t^j
\right)-
\sum_{j=2}^{N} {\rm Re}(c_j t^j)=O(t^{N+1}),
\end{equation*}
for every $N\in\N$.
From the above equality, we can see that
$c_j=a_j$ for every $j\in\N$.
This means that $({\mathcal S}\circ\hat{\gamma})(t)$
converges
and $({\mathcal S}\circ\hat{\gamma})(t)=h(t)$
on an open neighborhood of $t=0$.

\end{proof}

In \cite{FoN20},
smooth pseudoconvex real hypersurfaces in $\C^{n+1}$
of Bloom-Graham infinite type
admitting no curve $\gamma_{\infty}$ in
(\ref{eqn:1.2}) are constructed.
It follows from Theorem~6.3 that
many such hypersurfaces can be easily constructed.

\begin{corollary}
Let $M$ be a real hypersurface defined by
the equation (\ref{eqn:6.2}).
If the Bloom-Graham type of $M$ at $0$ is infinity,
then the following three conditions are equivalent.
\begin{enumerate}
\item
There is no $\gamma\in\Gamma$
tangent to $M$ at $0$ to infinite order;
\item
For all $\hat{\gamma}\in\hat{\Gamma}$,
the formal power series
$({\mathcal S}\circ \hat{\gamma})(t)$ does
not converge at any point on a delated open neighborhood
of $t=0$;
\item
The formal power series
${\mathcal S}(z)$ does not converge
at any point on a delated open neighborhood
of $z=0$.
\end{enumerate}
\end{corollary}

\begin{proof}
We remark that (ii) $\Longrightarrow$ (iii) can
be shown by using Abel's lemma
(cf.  the proof of
(iii) $\Longrightarrow$ (ii) in Theorem~6.3).
The other implications
can be directly obtained from Theorem~6.3.
\end{proof}

\begin{remark}
From (iii) in the above corollary,
it is easy
to construct smooth pseudoconvex hypersurfaces
of Bloom-Graham infinite type
satisfying the condition (i).
One of simple examples of hypersurfaces is given
by the equation
${\rm Re}(w)+
f_1(z_1,\bar{z}_1)+\cdots+f_n(z_n,\bar{z}_n)=0$,
where $f_j$ ($j=1,\ldots,n$)
are subharmonic functions
constructed in \cite{FoN20}
(see also Remark~5.8).
The example constructed in \cite{FoN20}
takes the same form, but this example
needs some additional conditions for each $f_j$.

\end{remark}

Roughly speaking,
when the flatness of hypersurfaces is stronger,
it becomes easier to find the curve tangent to $M$
to higher order.
Thus, the following question seems to be
more difficult:
does there exist a smooth pseudoconvex real hypersurface
in $\C^{n+1}$ ($n\geq 2$)
of the Bloom-Graham {\it finite type} that
admits no $\gamma\in\Gamma$
tangent to $M$ to infinite order?
The following theorem gives an affirmative answer.

\begin{theorem}
Let $n\geq 2$.
There exists a smooth pseudoconvex real hypersurface
$M$ in $\C^{n+1}$ with $\Delta_1(M,p)=\infty$ and
$\Delta_1^{\rm reg}(M,p)<\infty$
(in particular, $M$ is of Bloom-Graham finite type at $p$)
that
admits no $\gamma\in\Gamma$
tangent to $M$ at $p$ to infinite order.
\end{theorem}

\begin{proof}
Notice that since a desired real hypersurface $M$
satisfies that
$\Delta_1^{\rm reg}(M,p)<\Delta_1(M,p)$,
there is no ${\mathcal N}$-canonical coordinate for $M$
from Theorem~2.3.

First, let us construct a desired real hypersurface $M$ in $\C^3$.
Let $\{c_j\}_{j\in\N}$
be an increasing sequence of positive real numbers
such that the power series $\sum_{j=8}^{\infty} c_j z^j$
does not converge away from the origin.
Let $f$ be a real-valued smooth subharmonic function
defined near the origin
in $\C$ whose Taylor series is
$2\sum_{j=8}^{\infty} {\rm Re}(c_j z^j)$
(see Remark~5.8).
Let us consider the smooth function $F$
defined near the origin in $\C^2$ as
\begin{equation}\label{eqn:6.5}
F(z,\bar{z})=\left|z_1^3-z_2^2\right|^2
+f(z_1,\bar{z}_1).
\end{equation}
Let $M$ be a smooth real hypersurface in $\C^{3}$
defined by
$r(z,w)=2{\rm Re}(w)+F(z,\bar{z})=0$.
The pseudoconvexity of $M$ is obvious.

Now, let us consider $\Delta_1(M,0)$ and
$\Delta_1^{\rm reg}(M,0)$ by using
the Newton polyhedron of ${\mathcal N}_+(r)$.
It is easy to see
$$
{\mathcal N}_+(r):=\{\xi\in\R_+^3:
\xi_1/6+\xi_2/4+\xi_3\geq 1\}.
$$
Let $\kappa_0:=
\{(\xi_1,\xi_2,0)\in{\mathcal N}_+(r):
\xi_1/6+\xi_2/4=1\}$,
which is a compact face of ${\mathcal N}_+(r)$.
Then $F_{\kappa_0}$ is not ${\mathcal N}$-nondegenerate,
while $F_{\kappa}$'s are  ${\mathcal N}$-nondegenerate
for the other compact faces $\kappa$.
Therefore,
Theorems~7.3 and 8.4 in \cite{Kam20}
implies that if ${\gamma}\in{\Gamma}$ does not
take the form
\begin{equation}\label{eqn:6.6}
{\gamma}(t)=
(t^2,\pm t^3+o(t^3),o(t^{12})),
\end{equation}
then we have
$$
1\leq
\frac{{\rm ord}(r\circ{\gamma})}
{{\rm ord}({\gamma})}
\leq 6.
$$
In particular, every ${\gamma}\in{\Gamma}^{\rm reg}$
does not take the form (\ref{eqn:6.6}), so
it is easy to see $\Delta_1^{\rm reg}(M,0)=6$.
More precisely, we consider the case when
$\gamma$ takes the form (\ref{eqn:6.6}).
\begin{lemma}
Let $N$ be an arbitrary integer with $N\geq 10$.
Then the following two conditions are equivalent.
\begin{enumerate}
\item ${\rm ord}(r\circ\gamma)\geq 2N+2$;
\item $\gamma(t)=(t^2,\pm t^3+O(t^{N+1}),
-\sum_{j=8}^N c_j t^{2j} +O(t^{2N+2})).$
\end{enumerate}
\end{lemma}
\begin{proof}
By dividing the function $r$ into a polynomial part
and the remainder part,
a defining function for $M$ can be rewritten
as follows.
\begin{equation}\label{eqn:6.7}
r(z,w)=
2{\rm Re}\left(
w+\sum_{j=8}^N c_j z_1^j
\right)+
\left|z_1^3-z_2^2\right|^2
+R_{N+1}(z_1,\bar{z}_1),
\end{equation}
where
$R_{N+1}\in C_0^{\infty}(\C)$ with
${\rm ord}(R_{N+1})\geq N+1$.

First, we show (i) $\Longrightarrow$ (ii).
It suffices to treat the curves of the form (\ref{eqn:6.6}),
which will be more exactly denoted by
$\gamma(t)
=(t^2,\pm t^3+g(t),h(t))$ where
$g\in{\mathcal O}_0(\C)$ with
${\rm ord}(g)>3$ and
$h\in{\mathcal O}_0(\C)$ with
${\rm ord}(h)>12$.
Substituting this $\gamma(t)$ into (\ref{eqn:6.7}),
we have
\begin{equation}\label{eqn:6.8}
(r\circ\gamma)(t)=
2{\rm Re}\left(h(t)+\sum_{j=8}^N c_j t^{2j}\right)+
|g(t)|^2 +R_{N+1}(t^2,\overline{t^2}).
\end{equation}
Since $R_{N+1}(t^2,\overline{t^2})=O(t^{2N+2})$
and
the mixed terms and the pure terms cannot be canceled,
$g$ and $h$ must satisfy that
$g(t)=O(t^{N+1})$ and
$h(t)+\sum_{j=8}^N c_j t^{2j}=O(t^{2N+2})$,
which imply the condition (ii).

Next, we show (ii) $\Longrightarrow$ (i).
Substituting the equation in (ii) into (\ref{eqn:6.7}),
we can easily see
${\rm ord}(r\circ\gamma)\geq 2N+2$.
\end{proof}

It follows from the above lemma that
$\Delta_1(M,p)=\infty$.

Now, let us assume that there exists a curve
$\gamma_{\infty}\in\Gamma$ such that
${\rm ord}(r\circ\gamma_{\infty})\geq N$
for every $N\in\N$.
Let $\gamma_{\infty}(t)=:
(\gamma_{1}(t),\gamma_{2}(t),\gamma_{3}(t))$.
Since $\gamma_{\infty}$ satisfies the condition (i)
in Lemma~6.7,
the condition (ii) implies that
$\gamma_3(t)=-\sum_{j=8}^N c_j t^{2j} +O(t^{2N+2})$
for every $N\in\N$.
But, $\sum_{j=8}^{\infty} c_j t^{2j}$ does not converge
away from the origin, which is a contradiction to the holomorphy
of $\gamma_3$.
As a result, we see that
there exists no $\gamma\in\Gamma$ tangent to
$M$ at the origin to infinite order.

In higher dimensional case $\C^{n+1}$
with $n\geq 3$,
the following $F$ is considered:
\begin{equation*}
F(z,\bar{z})=\left|z_1^3-z_2^2\right|^2
+f(z_1,\bar{z}_1)+\sum_{j=3}^n |z_j|^2,
\end{equation*}
where $f$ is the same as that in (\ref{eqn:6.5}).
It is easy to construct higher dimensional
hypersurfaces satisfying the properties in
the theorem by using  $F$ in (\ref{eqn:6.5})
in a similar fashion to the three-dimensional case.
\end{proof}

\section{Open problems}

Theorems 5.5 and 6.3 only treat real hypersurfaces
of the model form
as in (\ref{eqn:3.2}).
The following problem is naturally raised.

\begin{problem}
Let $n\geq 1$ and let $M$ be
a general smooth (pseudoconvex) real hypersurface
in $\C^{n+1}$ and $p\in M$.
Give equivalence conditions for
the existence of $\gamma\in\Gamma$
tangent to $M$ at $p$ to infinite order,
analogous to those in Theorems 5.5 and 6.3.
\end{problem}

The second problem is concerned with Theorem~6.6.

\begin{problem}
Let $n\geq 2$ and let $M$ be
a smooth (pseudoconvex) real hypersurface
in $\C^{n+1}$ with
$\Delta_1^{\rm reg}(M,p)<\infty$ for $p\in M$.
Give equivalence conditions for
the existence of $\gamma\in\Gamma$
tangent to $M$ at $p$ to infinite order.
\end{problem}

Theorem~6.6 only provides a simple example
to the nonexistence of the desired $\gamma\in\Gamma$.

\vspace{ 2em}

{\bf Acknowledgements.}

The author greatly appreciates that
 Ninh Van Thu kindly informed of
important examples of
real hypersurfaces of infinite type in \cite{FoN20}.
The author also would like to express his sincere
gratitude to the referee for his/her careful reading
of the manuscript and giving the
author valuable comments.
This work was supported by
JSPS KAKENHI Grant Numbers JP20K03656,
JP20H00116.


\section{Introduction}

Van der Waals heterostructures (VdWh) are becoming a device design paradigm in 2D materials applications\cite{Li2017a,Liang2020}.
The operating layer, performing the primary functionality, is included in a stack of other 2D layers fulfilling secondary roles like protection, gating or control.
Encapsulating 2D materials in boron nitride (BN), for example, has already proven to be highly beneficial to the quality and cleanliness of the operating material's response\cite{Dean2010,Cadiz2017}.
The exciting prospect of including supporting 2D layers, to engineer the properties of the operating material beyond its intrinsic limits, has been much discussed in the past decade\cite{Geim2013,Novoselov2016a} but is only starting to be realized\cite{Tielrooij2018,Rivera2018,Wakamura2018,Kim2020}.
With this aim, one must understand, control, and exploit the interactions between all the layers within a VdWh.
The present work takes a critical step towards this challenging task, in taking fully and quantitatively into account the mutual dielectric feedback between 2D layers.

VdWh engineering brings particularly interesting opportunities to electronic transport.
High-mobility semiconductors are useful in many devices, especially when coupled with electrostatic doping\cite{Perera2013,Riederer2018,Zhao2019}, which allows to explore a wide range of carrier densities, in a non-destructive and versatile way. In this context, depending on the application and the situation, the operating layer needs to perform well in many different doping regimes (hereafter, the nature of the doping should be understood as electrostatic).
As discussed in the literature \cite{Ma2014a,Sohier2020}, it is a strong challenge for materials to display consistently good mobilities over a large range of carrier densities.
This is particularly true for 2D materials whose scattering is dominated by the Fr\"ohlich interaction with polar-optical phonons.
This work explores the possibility of exploiting their integration in a VdWh to provide uniform performance over a range of doping levels.

Ab initio simulation of transport properties has shown promise in its ability to guide materials design.
However, performing such studies for materials within a VdWh and over a large range of carrier densities remains   a challenge.
VdWh are difficult to simulate ab initio due to their multiple periodicities, entailing simulation supercells which are prohibitively large.
The simulation of doping is also not obvious:
Most ab initio electron-phonon scattering calculations in semiconductors are done in the zero doping limit.
The ability to self-consistently simulate electron-phonon interactions in electrostatically doped 2D materials was recently developed\cite{Sohier2017}, but remains computationally affordable only when Fermi surfaces are large enough, i.e.\, at large enough doping.
Models to bridge the gap between the zero and large doping regimes are still lacking.

Here we propose a step towards ab initio simulations of transport in VdWh devices over a large range of doping.
In particular, we propose a framework to deal with ``screenable'' contributions to electron scattering by phonons, as those are likely to be most affected by VdWh integration and doping.
We further focus on one of the most common and important type of screenable electron-phonon coupling: the Fr\"ohlich interactions with polar-optical phonons.
A semi-analytical scheme is used to treat the electrostatics of the VdWh including dielectric and free-carrier screening from different layers.
The response of each individual layer to a generic potential perturbation is computed in Density Functional (Perturbation) Theory (DFT / DFPT), then they are combined in a model for the full response of the VdWh to the Fr\"ohlich potential(s).
Dielectric models of VdWh have been developed in the past \cite{Andersen2015,Thygesen2017,Gjerding2020,Guo2020}, with a focus on quantities like the dielectric function and exciton binding energies.
We propose another formal framework, with a focus on the potentials generated by electron-phonon interactions, and apply it to a new problem: phonon-limited electronic transport.

This VdWh electrostatics model is used to demonstrate a solution to the aforementioned materials design challenge, i.e.\ high mobility over a wide range of doping regimes, using the prototypical example of GaSe.
In a recent work \cite{Sohier2020}, the outstanding transport performance of GaSe was predicted in the high doping regime.
Transport in this material is limited by the Fr\"ohlich interaction, and the high mobility at high doping relies largely on the screening of this interaction by free carriers added to GaSe.
This is confirmed in the present work by showing a decrease of intrinsic mobility by more than a factor $3$ in the low doping regimes.
It is then shown that this decrease can be avoided by putting GaSe in proximity with a metal, providing free-carrier screening externally, irrespective of GaSe's doping.
In particular, we propose a GaSe/BN/graphene heterostructure, with doped graphene as a ``screener'' layer and BN as a separator.
The principle of proximity free-carrier screening has recently been used to tune the band gap of semiconductors\cite{Qiu2019} and to manipulate electron-electron interactions in graphene\cite{Kim2020}.
We use it here to engineer electron-phonon interactions within the current-carrying 2D semiconductor.

This paper is structured as follows.
In section \ref{sec:Frolim}, we use the case of GaSe to discuss the doping-dependent performance of 2D layers in which the Fr\"ohlich interaction dominates electron-phonon scattering, and demonstrate that the lack of intrinsic free-carrier screening at low doping leads to very low mobility.
In section \ref{sec:model}, we develop the electrostatic model that allows us to calculate the response of the full VdWh from the ab initio response of each layer computed independently.
Finally, in section \ref{sec:results} we apply this approach to the GaSe/BN/Graphene heterostructure and show that the mobility can be kept at a high value between $500$ and $600$ cm$^2$/Vs for carrier densities from $10^{11}$ to $10^{13}$ cm$^{-2}$.

\section{Fr\"ohlich limited 2D semiconductors}
\label{sec:Frolim}

\begin{figure}[h]
   \includegraphics[width=0.47\textwidth]{mu_vs_T_neutral_GaSe.pdf}
   \caption{Ab initio mobility versus temperature in neutral GaSe, in the $n \to 0$ limit (reached at $n \simeq 10^{11}$).
   The mobility without the longitudinal optical (LO) phonons is plotted to show that scattering with this mode limits transport.
   Finally, we also compute mobility in a fictitious system by using the EPIs of GaSe doped at $n = 10^{13}$ cm$^{-2}$ while simulating the transport at $n = 10^{11}$ cm$^{-2}$.
   This shows that free carrier screening of the EPIs, induced by doping the layer itself, is able to suppress the main electron-phonon scattering mechanisms and increase the mobility.}
   \label{fig:mob_neut}
\end{figure}

\begin{figure}[h]
\includegraphics[width=0.47\textwidth]{gLO_Neutral_vs_doped_GaSe.pdf}
\caption{EPIs between the LO mode and states at the bottom of GaSe's conduction band, computed within DFPT for neutral and doped GaSe, as a function of the phonon momentum.
Other modes have non-negligible coupling (LA and A$_{\rm 1g}$), but LO clearly dominates scattering through the Fr\"ohlich interaction.
It is strongly affected by free-carrier screening: in the doped case, the coupling vanishes as $\Gamma$ and overall it barely reaches a $10\%$ of the maximum value in the neutral case ($\sim 1.124$ eV at $\Gamma$).}
  \label{fig:g_neut_dop}
\end{figure}

The broad class of materials concerned by this work are 2D semiconductors for which the electronic transport performance is limited by scattering mechanisms which are sensitive to free-carrier screening.
It is not obvious to further qualify this class as a whole, which hosts a variety of different members.
Focusing on intrinsic scattering mechanisms driven by electron-phonon interactions (EPIs), multi-valley materials can usually be excluded, since inter-valley EPIs are often strong\cite{Sohier2018,Sohier2019}, and at momenta larger than the size of the Fermi pocket that characterizes the free carriers providing the screening.
In this large momentum regime, free-carrier screening is inefficient even if the EPI are sensitive to it.
In single valley materials (up to quite high chemical potentials), it is reasonable to assume that free-carrier screening will be efficient on screenable EPIs.
These include the Fr\"ohlich, piezoelectric, and acoustic ``deformation-potential'' EPIs. Others, like those responsible for graphene's intrinsic transport properties, are altogether insensitive to screening. Which kind of EPI dominates transport will depend on the specific material.
This work focuses on 2D materials in which the dominant EPI is the Fr\"ohlich interaction between electrons and polar-optical phonons, usually the longitudinal optical (LO) modes.
Fr\"ohlich EPIs concerns any semiconductor in which the atoms of the unit-cell carry different Born effective charges (BECs).
This includes any non-elemental material, but also elemental materials with some factor disrupting the balance between the atoms \cite{Bistoni2019}.
Fr\"ohich EPIs increase as: BECs increases, screening decreases, or the LO phonon energy decreases.
Since they are mediated by long-range electric fields, they are screenable.
It is certainly one of the most pervasive and critical source of EPI\cite{Ponce2020,Ma2020}, and it has been extensively modelled in both 3D \cite{Mori1989, Sarma1985, Vogl1976, Sjakste2015, Verdi2015} and 2D \cite{Sohier2016}, with parameters for the BECs and the dielectric properties.
In 3D bulk materials, the Fr\"ohlich EPI diverges as the inverse of the phonon momentum in the long wavelength limit \cite{Ponce2015}, which can have a strong impact on scattering.
While the EPI stays finite in 2D systems, it still undergoes a sharp increase at small momenta, and the Fr\"ohlich EPI can easily dominate all other mechanisms as in 3D.

In the 2D framework, the long wavelength Fr\"ohlich electron-phonon coupling (see App.\ \ref{app:Frolich}) can be thought of as the ratio of a parameter depending on BECs and mildly on momentum, and the dielectric function $\epsilon(q)$, which accounts for both the environment and the material containing the electrons involved.
The dielectric function  in the long wavelength limit ($q\to0$) can be modeled as $1+ \alpha q$ for a 2D material in vacuum,  where $\alpha$ is the polarizability of the 2D layer~\cite{Cudazzo2011,Latini2015,Trolle2017,Tian2020}, but the present work relies on a more detailed and realistic model.
One general behavior is that, in 2D, the dielectric function is dominated by the response of the environment for $q \to 0$ and by that of the 2D material for $q \to \infty$.

In a recent work \cite{Sohier2020}, eleven of the best conductors within a database of exfoliable materials\cite{MC2D,Talirz2020,Mounet2018} were identified.
Seven of them (GaSe,  InSe, Bi$_2$SeTe$_2$, Sb$_2$SeTe$_2$, BiClTe, AlLiTe$_2$, BiSe$_3$) display rather large BECs and strong Fr\"ohlich EPIs. Since the calculations were done at a relatively large doping, these EPIs were screened by local free carriers, and did not affect drastically the conductivity.
However, those same materials can be expected to have much lower mobilities at low doping, when screening is ineffective.

A prototypical example is GaSe (see Ref.~\onlinecite{MC2D} for basic properties).
For reference, the room temperature mobility at $n=10^{13}$ cm$^{-2}$ was computed to be $\mu \simeq 600$ cm$^2$/Vs \cite{Sohier2020}, placing it among the very best performing 2D semiconductors at high doping.
We now look at electronic transport in GaSe in the zero doping limit.
EPIs are computed in DFPT and the full energy- and momentum-dependent Boltzmann transport equation is solved iteratively as described in Ref.~\onlinecite{Sohier2018}.
To compute the zero doping limit, we use $n=10^{11}$ cm$^{-2}$, as we found that the mobility is stable within $~ 2\%$ below that value.
The mobility as a function of temperature is shown in Fig.\ \ref{fig:mob_neut} for 3 different sets of EPIs (2 of them fictitious).
In the first (realistic) system, we use the EPI matrix elements as computed in the neutral material ($n=0$).
This represents the standard small doping limit.
The room-temperature mobility is $\mu \simeq 174$ cm$^2$/Vs, much lower than the high doping value.
For the second (fictitious) system we use the same EPI, but without the Fr\"ohlich-inducing phonon LO.
The mobility increases by an order of magnitude, clearly showing that Fr\"ohlich is limiting the mobility.
In the third system, we use the EPI computed in GaSe at a doping of $n=10^{13}$ cm$^{-2}$ in Refs. \onlinecite{Sohier2020,MCArchive}.
This system is fictitious because the BTE is solved with a doping level ($n=10^{11}$ cm$^{-2}$) different from the one used in EPI calculations ($n=10^{13}$ cm$^{-2}$).
It is instructive since it shows that, keeping all other factors the same, using the EPIs from the doped system leads to an order of magnitude increase in the mobility.
This is due to the screening  of the Fr\"ohlich EPI  by the high density of added free carriers, as confirmed in Fig.\ \ref{fig:g_neut_dop} showing the coupling of the LO mode $g_{LO}(|\mathbf{q}|)$ for the neutral and doped systems.
It can thus be inferred that free-carrier screening of the Fr\"ohlich EPI would enhance the mobility of GaSe in the low doping limit, similarly to how screening affects carrier relaxation in a related material, InSe~\cite{Chen2020}.
Since there are not enough intrinsic free carriers in GaSe in the low doping regime, one would need an external source of free-carrier screening.
We propose to place GaSe in a VdWh with doped graphene to screen the Fr\"ohlich EPIs remotely.
To demonstrate this, we first develop a model for the complete electrostatics of such systems.

\section{Van der Waals electrostatics model}
\label{sec:model}

This section describes a semi-analytical model parametrized with density-functional perturbation theory (DFPT) to solve the electrostatics (i.e.\ the response to a static electric field perturbation) of a VdWh in the presence of both dielectric and free-carrier screening.
We are especially interested in the response to the Fr\"ohlich potential generated by polar optical phonons.
The entire VdWh would be prohibitively expensive to simulate in DFPT, especially with the very fine wave vector grids needed for transport.
This model aims at re-constructing the full response of a VdWh from the response of each individual layer, which can be reasonably computed in DFPT.
The process relies on a response function model, which is isotropic and $q$ dependent in the plane and has a flexible profile in the out-of-plane direction.
Ultimately, we are interested in the screened potential felt by electrons in the operating layer, which will dictate its transport properties and the device performance.
More formal details can be found in App. \ref{app:model}. This model goes beyond previous analytical models meant to capture the first-order, long wavelength behavior of screening~\cite{Cudazzo2011,Latini2015,Trolle2017,Tian2020}, which are routinely employed~\cite{Keldysh1978,Cudazzo2011,Berkelbach2013,Sohier2017a}. Appendix \ref{app:AnaCompa} provides a more detailed comparison with such analytical models.

Although any combination of 2D layers can be studied, we focus here on GaSe/BN/Graphene systems, as represented in Fig.\ \ref{fig:system}.
Monolayer GaSe (gap $\approx 1.8$ eV  within the GGA-PBE approximation to the DFT exchange-correlation functional) is the operating material  in which electronic transport occurs.
Carrier densities ranging from the $n \to 0$ limit up to $n=10^{13}$ cm$^{-2}$ are considered in the GaSe layer.
Doped monolayer graphene is the ``remote screener'', with a fixed carrier density of $n=5\ 10^{13}$ cm$^{-2}$, which will be referred to later on via the notation Gr(doped).
BN has a large gap of $\approx 4.7$ eV in GGA-PBE and is routinely used in 2D VdWh as an encapsulator or gate dielectric.
It is necessary here to electrically isolate the operating material from the remote screener and avoid charge transfers.
Both monolayer and multilayer BN are studied in the following.

\begin{figure}[h]
\includegraphics[width=0.48\textwidth]{VdWh.png}
\caption{Schematic view of the system studied. The transport layer (here GaSe or more precisely Ga$_2$Se$_2$, which is composed of two sublayers) is the operating 2D material that carries the current.
The screener layer (doped graphene) provides free-carrier screening remotely.
Finally, the separator (BN) electrically insulates the operating material and the screener.
The interlayer distances $d_0$ and $d_1$ can be different in general, but they are both fixed to $d=3.4$ \AA\ in this work.
Although monolayer BN is represented, multilayer BN is also considered.}
\label{fig:system}
\end{figure}

The electrostatics of the system are determined from the response of each individual layer to electric fields perturbations.
Given the in-plane periodicity and symmetry of the system, the corresponding perturbing potential is periodic in the plane, and written $V(q,z)$ where $q$ is the norm of the in-plane momentum, and $z$ the out-of-plane real-space variable.
Doped graphene responds like a metal, with perfect screening of in-plane electric fields in the long wavelength limit.
BN also brings a $q$-dependent dielectric response (inefficient at small $q$, and similar to bulk BN at large $q$).
The operating layer, GaSe, responds like a dielectric at low doping, and a metal at high doping.
The dielectric response of neutral GaSe is computed directly in DFPT, and the contribution of potential free-carriers (as induced in GaSe by electrostatic doping) is added on top.
As detailed in App.\ \ref{app:model}, the central quantity characterizing each layer's behavior is the interacting response function, assumed to be of the form:
\begin{align}\label{eq:chi}
\chi(q,z,z') =& Q(q) f(q,z-z_0)f(q,z'-z_0) \\
              &+ P(q) g(q,z-z_0)g(q,z'-z_0) \nonumber
\end{align}
$Q,f$ characterize the monopole contribution to the response, while $P,g$ represent the dipole part.
$f$ is an even function of $z$, and describes the normalized spatial profile of the material's response to a constant potential $V(q,z) \propto 1$.
$Q$ is the associated $q$-dependent amplitude of this response. Similarly, $g$ is odd and, along with the amplitude $P$, they represent the response to a linear potential $V(q,z) \propto z$ ($q$-dependent vertical  electric field).
Those functions are computed for each individual layer in DFPT for the range of momenta $q$ that eventually enter the Boltzmann transport equation.
Isotropy is assumed, so only one arbitrary direction is used for the momentum.

The responses of each layer are then combined in an electrostatic model of the VdWh, as detailed in appendix \ref{app:combi}.
This is done within the random-phase approximation (RPA)\cite{RPA1,RPA2,RPA3} in the limit of a negligible interlayer overlap~\cite{Guo2020}, so that each layer responds to an effective external potential made of the global external potential plus the sum of the induced potentials from all other layers.
This assumption allows us to define a simple system of equations that we then solve numerically.
In appendix \ref{app:tests}, the model is compared with direct DFPT calculations in mono- and bilayer BN to demonstrate its accuracy and the reliability of the assumption above.

Since they have finite Born effective charges, both BN and GaSe will generate Fr\"ohlich EPIs.
Electrons in GaSe thus couple to polar-optical phonons in both GaSe and BN, the latter being remote~\cite{Wang1972,Hess1979,Moore1980}.
Phonons are not explicitly simulated in the VdWh electrostatics model.
They are assumed to be unchanged from the isolated layers to the VdWh (no interlayer hybridization of modes).
The potential they generate is recreated from DFPT calculations, and used to perturb the VdW electrostatics model.
One improvement over previous models \cite{Sohier2016} is to exploit the parametrization of the layers' dielectric response to model the profile of the polarization density that generates the Fr\"ohlich EPI. The same profile is used as a proxy to project the Fr\"ohlich potential of electronic wave functions in order to obtain the corresponding electron-phonon coupling. Details of this model, as well as a comparison with direct DFPT calculations, are given in App.\ \ref{app:Frolich}.
Only first order dipole potentials are considered, quadrupole contributions \cite{Brunin2020a,Brunin2020,Jhalani2020,Park2020} are neglected.
In principle, multilayer materials generate several polar-optical phonons with different phase shifts in the layers\cite{Sohier2017a,Michel2011}.
Here we focus on the mode with largest Fr\"ohlich EPI, in which all layers are in phase.
We make the adiabatic approximation, allowing us to treat phonons as a static perturbation ($\omega = 0$).

The Fr\"ohlich potential and the responses are assumed to be isotropic in the range of $\mathbf{q}$ vectors considered.
This is valid for all layers here, as is well-known for graphene and BN \cite{Sohier2016,Sohier2017a,Sohier2015}, and also in GaSe as we can see in Fig.~\ref{fig:g_neut_dop}.
Indeed, the $\mathbf{q}$ vectors calculated within DFPT sample the whole Brillouin zone, along all possible directions; the fact that the scatter plot gives a line demonstrates isotropy.

Interlayer distances are chosen to be $3.4$ \AA, understood as the geometric distance between the outermost atomic planes of successive 2D materials.
For BN and graphene, there is only one atomic plane.
For GaSe, there are 4, the outermost being $2.4$ \AA\ away from the center of the layer.

For clarity, we compare our formalism with the existing Quantum Electrostatic Heterostructure (QEH) model\cite{Andersen2015,Gjerding2020} in App.\ \ref{app:QEHcompa}.
They both achieve a similar general purpose: to compute the dielectric response of a Van der Waals heterostructure from the ab initio response of each individual layer.
The main physical ingredients (monopole and dipole responses) and approximations (RPA and negligible interlayer hybridization/overlap) are the same. The parametrization from DFPT and the scope of application differ. The difference in application means we perturb with different potentials and extract different quantities.
If we were to apply exactly the same perturbation (bare Fr\"ohlich potentials) and extract exactly the same quantities (screened Fr\"ohlich potentials), we expect the different parameterization to yield a qualitatively similar result. The extent of the quantitative numerical difference is difficult to estimate.

Ab initio calculations of structures, ground states and dielectric responses are performed with Quantum ESPRESSO\cite{Giannozzi2009,Giannozzi2017} (QE).
Full electron-phonon interactions and transport calculations in neutral and doped GaSe were done for comparison, with ultrasoft pseudopotentials from the SSSP library\cite{Prandini2018a} (efficiency version 0.7).
The Phonon code of QE has been modified to compute the dielectric response of each layer.
More specifically, the phonon perturbation is replaced by the potentials in Eq.~\eqref{eq:Vpert} of App.~\ref{app:resp}.
Those modifications are similar to a previous work \cite{Sohier2015}, with the addition of the dipole perturbation.
Dielectric responses were computed using optimized norm-conserving Vanderbilt pseudopotentials\cite{Hamann2013} from the pseudo-Dojo library\cite{VanSetten2018}, as the modifications of the Phonon code have not been implemented yet for other types of pseudopotentials.
We use the AiiDA materials informatics infrastructure\cite{Pizzi2016,Huber2020} to manage calculations and store data.
The solution of the VdWh electrostatics model is implemented in Python. The associated code, along with a database containing the electrostatic responses of doped graphene, BN and GaSe is available \footnote{\url{https://gitlab.com/tsohier/vdw_electrostatics}}.

\section{Results}
\label{sec:results}

Our approach provides a clear and intuitive physical understanding of the VdWh in terms of electrostatics.
Fig.~\ref{fig:pot_soup} illustrates this by showing the potentials solving the model in the most relevant configuration: GaSe(neutral)/BN/Gr(doped) perturbed by a Fr\"ohlich potential from GaSe's polar-optical phonons.
We select two momenta at the extrema of the interval considered in this work.
At small $q$, graphene's response is prominent.
Indeed, the perturbation extends far in the out-of-plane direction and graphene is metallic, so the induced potential is (negatively) large.
We also note that since the bare Fr\"ohlich potential varies over the dielectric thickness of the graphene layer, graphene's response is not symmetric with respect to the middle of the layer.
Responses from BN and GaSe both display clear dipole-like features with positive and negative electric field regions.
For GaSe, the dipole component originates mostly from the response to graphene's induced potential, which varies significantly over GaSe's thickness, yielding a finite electric field.
Despite the dipolar feature, GaSe's response clearly does not average to zero, indicating that there is a significant monopole component to its response as well, this time triggered mostly by the bare Fr\"ohlich perturbation.
BN's response also includes both monopole and dipole components, but is closer to a purely dipolar one.
BN feels two main potentials with finite derivatives: the bare Fr\"ohlich from GaSe and the induced response from graphene.
They have counteracting effects, and the sign of the dipolar response confirms that the bare Fr\"ohlich from GaSe dominates.

At large $q$, GaSe itself performs most of the screening, with a small contribution from BN on one side.
The induced potential from graphene is very weak compared to the smaller $q$ case, due to the fact that the bare Fr\"ohlich potential decays more rapidly (as $~ e^{-q|z-z_{\rm{GaSe}}|}$) in the out-of-plane direction and doesn't reach graphene.
The screened Fr\"ohlich potential is slightly smaller (more screened) on the side of GaSe adjacent to BN.
This was true for the small $q$ case as well, and is a general and intuitive feature: the screening is more efficient towards the separator and screener layers.
However, the difference is within $2\%$: despite the asymmetry of the induced potentials (with respect to their respective layers), the total screened potential ends up quite flat within each layer.
This indicates that the dipole response of each layer is near-perfect, meaning that any perpendicular electric field is almost fully compensated.
\\

\begin{figure}[h]
   \includegraphics[width=0.45\textwidth]{potentials.pdf}
   \caption{Bare, induced and screened potentials for the most relevant configuration: GaSe(neutral)/BN/Gr(doped), in response to the Fr\"ohlich potential generated by GaSe, at two values of momentum.
   The induced potential is separated  into contributions from each layer, with their position indicated by the vertical dashed lines. The definition and units of $V(q,z)/A$ correspond to those of the Fr\"ohlich potential given in appendix \ref{app:Frolich}.}
   \label{fig:pot_soup}
\end{figure}

In Fig.\ \ref{fig:remote_screening}, the electrostatics are solved in different systems, gradually adding the key layers and observing the effects on the screened Fr\"ohlich EPIs as felt by GaSe's electrons. Those are computed by averaging the full screened potential over the GaSe layer, as detailed in App.\ \ref{app:Frolich}.
First, in neutral GaSe alone, the Fr\"ohlich potential is only screened dielectrically by GaSe.
Second, in GaSe(neutral)/BN, there is a relatively weak additional dielectric screening from BN: this represents the standard type of screening one can expect from a dielectric environment (substrate or encapsulator).
An additional remote Fr\"ohlich potential~\cite{Wang1972,Hess1979,Moore1980} from BN comes into play.
Although it is quite strong, its consequence on transport is limited by the fact that the energy of the associated phonon is very large ($\sim 0.19$ eV).
Indeed, injecting this coupling into a simple Fermi golden rule, the scattering rate of a state at the Fermi level is proportional to
$n_{\rm{BE}}(\hbar \omega) \times (1-n_{\rm{FD}}(\varepsilon_F+\hbar \omega))+(n_{\rm{BE}}(\hbar \omega)+1)\times(1-n_{\rm{FD}}(\varepsilon_F-\hbar \omega))$
where $n_{\rm{BE}}$ and $n_{\rm{FD}}$ are the Bose-Einstein and Fermi-Dirac occupation functions for phonons and electrons, respectively.
Up to high temperature, there will be few phonons to absorb ($n_{\rm{BE}}(\hbar \omega) \ll 1 $), and phonon emission (second term) will be limited by the fact that states at $ \varepsilon_F - \hbar \omega$ are mostly occupied ($1-n_{\rm{FD}}(\varepsilon_F-\hbar \omega) \ll 1$).
In fact, based on LO frequencies in GaSe and BN ($200$ and $1500$ cm$^{-1}$, respectively), this expression allows to estimate that for a equal EPI the scattering from BN's phonons will 3 orders of magnitude less efficient than GaSe's at room temperature.
Third, in GaSe(neutral)/BN/Gr(doped), the doped graphene sheet acts as a remote `` screener'' layer.
There is now some metallic screening, with the coupling vanishing as $q \to 0$.
The efficiency of this remote screening is limited in $q$,  as seen when comparing the induced potentials from graphene at small and large $q$ in Fig.\ \ref{fig:pot_soup}. The efficiency is related to the inverse of the distance between  graphene and GaSe.
Still, the remote screening is most essential in the critical low doping limit of GaSe, when the Fermi surface and $\mathbf{q}$ vectors relevant for transport in GaSe are small.
Thus, reducing the sharp increase at $q=0$ is enough to suppress the electron-phonon scattering.\\

\begin{figure}[h]
   \includegraphics[width=0.45\textwidth]{gfro_GaSe_BN_Gr.pdf}
   \caption{Fr\"ohlich EPIs from polar-optical phonons in both GaSe (plain) and BN (dashed), as felt by electrons in GaSe, in different setups: GaSe(neutral) alone, GaSe(neutral)/BN, and GaSe(neutral)/BN/Gr(doped), with at $n=5\ 10^{13}$ cm$^{-2}$ in graphene.
   Fr\"ohlich potentials coming from both GaSe and BN are considered, but always ``as felt by GaSe electrons'', that is, the Fr\"ohlich potential is always averaged over the GaSe layer.}
   \label{fig:remote_screening}
\end{figure}

Fig.\ \ref{fig:num_layers} shows the effect of  the number $N$ of BN layers.
As $N$ increases, so does the intensity of the remote Fr\"ohlich EPIs, as contributions from each layer add up.
The efficiency of remote screening from graphene is limited to momenta smaller than a certain critical $q$, which decreases with increasing distance $d$ between GaSe and graphene.
This effect can be roughly estimated as follows.
Both the bare Fr\"ohlich potentials felt by graphene and the induced potential from graphene felt by GaSe decay as $e^{-qd}$.
Remote screening becomes inefficient when $e^{-q \times (2d)}\ll 1$, that is when $q \gg \frac{1}{2d}$, where $d = (N+1) \times  3.4$ \AA\ in our model.
Thus, from an electrostatics standpoint, it is better to minimize the number of layers.
Of course, what is feasible and optimal in a practical device may depend on other parameters.\\

\begin{figure}[h]
   \includegraphics[width=0.45\textwidth]{gfro_GaSe_BNlayers.pdf}
   \caption{Fr\"ohlich EPI from polar-optical phonons in both GaSe (plain) and BN (dashed), as felt by electrons in GaSe, in GaSe(neutral)/BN/Gr(doped), changing the number of BN layers ($N$).
   Most of the screening comes from free carriers in graphene, and it becomes less efficient as $N$ increases and the distance between graphene and GaSe increases.
   The increase in the Fr\"ohlich EPI coming from polar-optical phonons in BN is more drastic because the bare Fr\"ohlich potentials from each BN layer add up.}
   \label{fig:num_layers}
\end{figure}

Fig.\ \ref{fig:doping} shows the variation of the EPIs in GaSe($n$)/BN/Gr(doped) with respect to carrier density $n$ in GaSe.
Screening from the free carriers added in GaSe is modeled as described in App.\ \ref{app:free} at room temperature.
First, note that as $n$ increases, the Fermi surface gets larger, and the momenta most relevant to transport ($q \approx 2 k_F$) increase.
The efficiency of intrinsic free-carrier screening also follows the size of the Fermi surface and extends to larger $q$. As a result, the Fr\"ohlich EPIs (intrinsic and remote) at momenta relevant for transport are always significantly screened.

\begin{figure}[h]
   \includegraphics[width=0.45\textwidth]{gfro_doping_GaSe.pdf}
   \caption{Fr\"ohlich EPI from polar-optical phonons in both GaSe (plain) and BN (dashed), as felt by electrons in GaSe, in GaSe($n$)/BN/Gr(doped), changing the doping in GaSe $n$.
   As the carrier density increases, free-carrier screening from electrons in GaSe comes into play, ensuring the ability of the system as a whole to screen EPIs at the larger momenta involved in transport.}
   \label{fig:doping}
\end{figure}

In Fig.\ \ref{fig:mobility}, we inject the modelled Fr\"ohlich EPIs of the last system, GaSe($n$)/BN/Gr(doped), back into the Boltzmann transport solver and look at the mobility as a function of GaSe doping $n$.
The rest of the EPIs, with a much smaller contribution to transport (see Fig.~\ref{fig:mob_neut}), are taken from DFPT calculation in doped ($n = 10^{13}$ cm$^{-2}$) single layer GaSe.
Those other EPIs, and in particular those from acoustic phonons, are only partially screenable.
This complicates their modelling in the current framework, which is left for future work.
Here, for acoustic EPIs, we essentially replace the doping-dependent screening  from the whole VdWh by the screening from GaSe at $n = 10^{13}$ cm$^{-2}$.
Note that the mobility predicted by this model at $n = 10^{13}$ cm$^{-2}$ is very close to the one computed directly in DFPT in GaSe alone, at the same doping.
After determining that the contribution of remote Fr\"ohlich EPIs from BN is negligible (as expected due to the high frequency of the associated phonons), we deduce that this agreement is the result of the cancellation of two effects: additional screening from graphene which tends to increase the mobility, and the overestimation of the bare Fr\"ohlich coupling discussed in appendix \ref{app:Frolich} which tends to reduce it.
Both contributions were estimated to be on the order of $10\%$ of the mobility (with opposite signs). Since the overestimated bare Fr\"ohlich coupling is just a limitation of our model, we expect the current results to be conservative.
In addition to preserving good performance at high doping, the benefits of the VdWh are obvious, since instead of degrading towards the neutral isolated limit at low doping ($<200$ cm$^{-2}$/Vs), the mobility stays relatively high above $450$ cm$^{-2}$/Vs.
As carrier density decreases, the intrinsic free-carrier screening lost from depleting carriers in GaSe is compensated by remote free-carrier screening from graphene.
Remote screening thus extends the outstanding performance of GaSe to the full range of doping typically achievable experimentally.

\begin{figure}[h]
   \includegraphics[width=0.45\textwidth]{mob_doping_GaSe.pdf}
   \caption{Mobility versus electrostatic doping in the GaSe($n$)/BN/Gr(doped) system, replacing $g_{LO}$ by our momentum and doping dependent model for the Fr\"ohlich EPIs within the VdW heterostructure. Remote EPIs from BN are also added. The dots are direct, full DFPT calculations for a monolayer GaSe in the low doping limit (EPIs computed in neutral GaSe, transport solved at $n=10^{11}$ cm$^{-2}$) and at high doping ($n=10^{13}$ cm$^{-2}$).}
   \label{fig:mobility}
\end{figure}

\section{Conclusion}
We have developed a semi-analytical model to simulate the electrostatic response of any VdWh.
The model is parametrized via the DFPT density-response of each individual layer to a monopole and dipole perturbation potential.
We use this model to explore the possibility of using metallic 2D layers in VdWh (e.g. doped graphene) to induce free carrier screening remotely in a current carrying semiconducting layer.
This is particularly relevant for 2D semiconductors with transport properties limited by screenable EPIs such as the Fr\"ohlich interaction.
In particular, such materials would typically showcase excellent transport performance in presence of free-carrier screening (e.g.\ at high-doping), but lower mobilities in its absence (low doping).
Using GaSe as a prototypical example, we show that integrating it in a VdWh device with doped graphene as a remote screener and BN as a separator enhances the mobility at low doping.
The mobility is thus maintained at a  consistently high value of $\sim 500-600$ cm$^{-2}$/Vs on a wide range of carrier concentrations.

\begin{acknowledgements}
We are grateful to Matteo Calandra for his help with the initial implementation of the linear response to a monopole perturbation in the Quantum ESPRESSO code.
We acknowledge that the results of this research have been achieved in DECI project RemEPI on ARCHER EPCC with support from the PRACE aisbl.
Simulation time was also awarded by PRACE (project id. 2020225411) on MareNostrum at Barcelona Supercomputing
Center - Centro Nacional de Supercomputación (The Spanish National Supercomputing Center)".
Computational resources have been provided by the Consortium des Equipements de Calcul Intensif (CECI), funded by the Fonds de la Recherche Scientifique de Belgique (F.R.S.-FNRS) under Grant No. 2.5020.11 and by the Walloon Region.
T.S.\ acknowledges support from the University of Liege under Special Funds for Research, IPD-STEMA Programme.
M.G.\ acknowledges support from the Italian Ministry for University and Research through the Levi-Montalcini program and from the Swiss National Science Foundation through the Ambizione program.
M.J.V.\ gratefully acknowledges funding from the Belgian Fonds National de la Recherche Scientifique (FNRS) under PDR grant T.0103.19-ALPS.
\end{acknowledgements}