Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model
The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs is calculated. It is shown that in the case of a stationary state ($t > 5\tau _d^{(2)}$), the concentration of vacancies in the inhomogeneously compressed interlayer is smaller relative to the initial average value $N_{d0}^{(2)}$ by 16%