Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magnetoresistance is achievable by changing the alignment of induced magnetization. Application of a perpendicular electric field on the parallel configuration, results in a spin field-effect transistor where a fully spin polarization occurs around the Dirac point. To be comparable our results with the one for monolayer graphene, we demonstrate that the reflection symmetry and so the parity conservation fails in bilayer graphene nanoribbons with the zigzag edges.