Effect of Strain on Band Engineering in Gapped Graphene
We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically polarized dressing field in the presence of strain along armchair and zigzag directions. Our results show that the energy spectrum exhibits different symmetries and for the strainless case it takes an isotropic and anisotropic forms whatever the values of irradiation intensity, whereas it is linear as in the case of pristine graphene. It increases slowly when strain is applied along the armchair direction but rapidly for the zigzag case. Moreover, it is found that the renormalized band gap changes along different strain magnitudes and does not change for the polarization phase $\theta$ compared to linear and circular polarizations where its values change oppositely.