You are presented with multiple paper abstracts, alongside the associated literature review and chapter titles. Given the provided information, you are going to do a literature review. Please generate a coherent literature review that synthesizes the content, draws connections between different works, highlights major findings, and identifies any gaps in the existing research.

Literature Review Title: Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview 
Chapter Title:  1) High voltage breakdown. 
1. Abstract of Cited Paper (BIB001):  Considering typical conditions of railway traction applications, this paper presents an experimental and simulative analysis of over-current turn-off failure in IGBT devices packaged in parallel within IGBT multichip modules. Extensive experimental analysis is carried out by means of a dedicated test-circuit. Thus, for greater insight, electro-thermal simulations at device level have been carried out. The results show that mismatches in the electro-thermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure.

Literature Review:
High voltage spikes induced by high falling rate of collector current (I C ) and stray inductance can destroy IGBT during turn-off, especially under repetitive spikes  BIB002 . Due to the high turn-off voltage spike, electric field can reach the critical field and break down one or a few IGBT cells first, and lead to high leakage current as well as high local temperature. Subsequently, the heat-flux radially diffuses from the overheated region to the neighboring cells. Collector-emitter voltage (V CE ) collapses after the voltage spike, and then I C rises again. Also, the gate terminal may also fail, which results in gate voltage (V GE ) rising up. High value of V CE and V GE can also lead to short-circuit during turn-on. An abrupt destruction and peak current happen after several microseconds during turn-on. The hole current caused by avalanche generation concentrates on a certain point (usually high-doped p+ region). The destruction point is always located at the edge of the active area close to device's peripheral region BIB001 . Therefore, it is critical to clamp V GE and V CE during switching transients.