You are presented with multiple paper abstracts, alongside the associated literature review and chapter titles. Given the provided information, you are going to do a literature review. Please generate a coherent literature review that synthesizes the content, draws connections between different works, highlights major findings, and identifies any gaps in the existing research.

Literature Review Title: A Survey on ESD protection design in different RF circuits 
Chapter Title:  Figure 3 (a) Proposed ESD protection design A and (b) proposed ESD protection design B. 
1. Abstract of Cited Paper (BIB001):  Grounded-gate NMOS (GGNMOS) plays a more important role in electrostatic discharge (ESD) protection because of its simple structure and low trigger voltage. Various GGNMOS based on 90nm, 65nm and 40nm CMOS process are compared to investigate its ESD characteristic changes with process advancing. Results show that the key parameters, including channel width and length, have great influence on its ESD metrics. 
2. Abstract of Cited Paper (BIB002):  On-chip electrostatic discharge (ESD) protection device with large dimension can sustain high-ESD current, but the parasitic capacitance of the ESD protection device will increase the difficulty of impedance matching and degrade the bandwidth for broadband radio frequency (RF) applications. The traditional distributed ESD protection circuit can achieve good impedance matching, but it has a worse ESD robustness because of larger resistance caused by the input inductor. In this paper, a new distributed ESD protection structure with the stacked diodes with embedded silicon-controlled rectifier is proposed to attain good ESD robustness without degrading the RF performance. The proposed ESD protection circuit has been successfully verified in a 40-nm, 2.5-V CMOS process to sustain a human-metal model of 5 kV. The proposed ESD protection circuit is suitable to protect the broadband RF circuits in advanced nanoscale CMOS technology.

Literature Review:
To reduce the inductance used in LN, another additional capacitor (CS) can be added to attach in parallel with ESD protection diode. In other words, the parasitic capacitance of ESD protection diodes (C Diodes) is increased by adding the parallel capacitor (CS). It is better to add the supplement capacitor rather than rising the diode size, because the additional capacitor provides the simply capacitance, while increasing diode size lowers the parasitic resistance, which produces the lower parasitic impedance and higher insertion loss. In ESD series -connected diode strings and protection diodes are used. As diodes are increased more and more the total extra noise figure of the diode string ESD protection is increased BIB001 . GGNMOS has low set off voltage and straightforward structure, therefore GGNMOS and GGNMOS triggered ESD protection devices are broadly used in ESD guard field. The impact of W on trigger voltage and holding voltage is mainly considered as well as the impact of L on holding voltage when designing GGNMOS under 40nm process BIB002 . Examination on various ESD protection strategies dedicated to 3.3V RF applications (2GHz) in a 0.18mm CMOS process by C. Richier, compares different ESD protection devices and shows that a appropriate ESD performance target for RF applications (200fF max, 2kV HBM) can be reached with a diode network method. The optimization of the diodes is then a key point. A compromise has created between the ESD performance, the voltage drop during ESD and the parasitic capacitance. Poly as well as shallow trench isolation (STI) bounded diodes have been studied and it appears clearly that a solution based on poly bounded diodes is the best choice ( Fig. 4) . Different ESD protection strategies are offered and evaluated in terms of ESD performance but also in terms of parasitic capacitance. Poly and STI bounded diodes have been examined and poly diodes were found to have the best trade-off for the safety of RF applications (Fig. 5 ) [12] . Chen BIB003 proposed a new distributed ESD protection structure with the stacked diodes with embedded silicon-controlled rectifier to achieve good ESD robustness without degrading the RF performance. The proposed ESD protection circuit was confirmed in a 40nm, 2.5-V CMOS process to sustain a humanmetal model of 5 kV (Fig. 6 ). The proposed ESD protection circuit is suitable to guard the broad band RF circuits in superior nano scale CMOS technology. This newly proposed protection circuit has achieved lower turn-ON resistance, good ESD robustness, and required RF performance.