본 발명의 목적은 전자 방출부의 막 두께에 관계없이 적층 절연층 구조의 안정성을 확보하여 전자빔 집속 효율을 높일 수 있는 전자 방출 소자를 제공하는 것이다. An object of the present invention to provide an electron-emitting device that can improve the electron beam focusing efficiency and ensure the stability of the laminated insulating layer structure, regardless of the electron-emitting portion in the film thickness.
본 발명의 목적은 서로 대향하여 배치되는 제 1 기판과 제 2 기판; An object of the present invention includes a first substrate and a second substrate disposed opposite to each other; 제 1 기판 위에서 제 1 절연층을 사이에 두고 서로 절연된 상태로 배치되는 캐소드 전극 및 게이트 전극; The cathode electrodes and the gate electrode are arranged in a place isolated each other between a first insulating layer on the first substrate; 캐소드 전극에 전기적으로 연결되는 전자 방출부; Electron emitting portions electrically connected to the cathode electrode; 전자 방출부를 개방시키며 전자 방출부 위에 형성되는 집속 전극; Electron emitting an opening sikimyeo focusing electrode formed over the electron-emitting portion; 캐소드 전극 및 게이트 전극 중 어느 하나의 전극과 집속 전극 사이에 배치되는 제 2 절연층을 포함하며, 제 1 절연층과 제 2 절연층은 각각 1㎛ 이상의 두께를 가지고, 제 1 절연층이 제 2 절연층의 소성 온도보다 약 50℃ 이상 높은 소성 온도를 가지거나, 제 2 절연층의 연화점보다 약 30℃ 이상 높은 연화점을 가지는 전자 방출 소자에 의해 달성될 수 있다. Including a cathode electrode and a gate electrode, the second insulating layer disposed between any one electrode and the focusing electrode of, and has a first insulating layer and second insulating layer are each 1㎛ or more thickness, the first insulating layer is a second at least about 50 ℃ than the firing temperature of the insulating layer of a high sintering temperature, or at least about 30 ℃ than the softening point of the second insulating layer can be achieved by the electron-emitting device having a high softening point.
도 1은 본 발명의 실시예에 따른 전자 방출 소자를 나타낸 부분 분해 사시도. 1 is a partial exploded perspective view showing an electron-emitting device according to an embodiment of the invention.
도 2는 도 1의 전자 방출 소자의 조립 상태를 나타낸 부분 단면도. Figure 2 is a partial sectional view showing an assembled state of the electron-emitting device of FIG.
도 3은 본 발명의 다른 실시예에 따른 전자 방출 소자를 나타낸 부분 단면도. Figure 3 is a partial cross-sectional view showing an electron-emitting device according to another embodiment of the present invention.
도 4 내지 도 6은 전자 방출 소자의 제 1 및 제 2 절연층의 소성 온도에 따른 게이트 전극의 변형 정도를 나타낸 도면. 4 to 6 is a view of the amount of deformation of the gate electrode of the first and the firing temperature of the second insulating layer of the electron-emitting device.
도 7a 내지 도 7d는 본 발명의 실시예에 따른 전자 방출 소자의 제조방법을 설명하기 위한 순차적 공정 단면도. Figures 7a to 7d are cross-sectional views sequentially illustrating a method of manufacturing an electron-emitting device according to an embodiment of the invention.
본 발명은 전자 방출 소자에 관한 것으로, 보다 상세하게는 전자빔 집속을 위한 집속 전극을 구비한 전자 방출 소자에 관한 것이다. The invention will, more particularly, relates to an electron-emitting device is directed to the electron emission device having a focusing electrode for focusing the electron beam.
일반적으로, 전자 방출 소자는 전자원으로 열음극을 이용하는 방식과 냉음극을 이용하는 방식이 있다. In general, the electron-emitting device has a system using a method using a hot cathode as an electron source and a cold cathode.
여기서, 냉음극을 이용하는 방식의 전자 방출 소자로는 전계 방출 어레이(Field Emitter Array; FEA)형, 표면 전도 방출(Surface Conduction Emitter; SCE)형, 금속-유전체-금속((Metal-Insulator-Metal; MIM)형, 금속-유전체-반도체(Metal-Insulator-Semiconductor; MIS)형 및 밸리스틱 전자 표면 방출(Ballistic electron Surface Emitting; BSE)형 등이 알려져 있다. Here, the electron-emitting device of the method using a cold cathode are a field emission array (Field Emitter Array; FEA) type, a surface conduction emission (Surface Conduction Emitter; SCE) type, a metal-dielectric-metal ((Metal-Insulator-Metal; MIM) type, a metal-dielectric-semiconductor (metal-Insulator-semiconductor; MIS) type, and stick valley electron surface emitting (Ballistic electron surface emitting; the like BSE) type are known.
이러한 전자 방출 소자들은 그 종류에 따라 세부적인 구조가 상이하지만, 기본적으로는 진공 용기 내에 전자 방출을 위한 구조물을 형성하여 이로부터 전자를 방출시키며, 이 전자를 이용하는 대상물로서 형광층을 구비하는 경우 발광 또는 표시 작용을 하게 된다. These electron-emitting devices are detailed structures are different depending on its type, but basically includes a light emitting case having a fluorescent layer as the object of using the sikimyeo emit electrons therefrom to form a structure for the electron emission in the vacuum chamber, the electron or is the display action.
이 중 FEA형 전자 방출 소자는 일 함수(work function)가 낮거나 종횡비(aspect ratio)가 큰 물질을 전자원으로 사용할 경우 진공 중에서 전계에 의해 쉽게 전자가 방출되는 원리를 이용한 것으로서, 몰리브덴(Mo) 또는 실리콘(Si) 등을 주 재질로 하는 선단이 뽀죡한 팁 구조물이나 카본 나노튜브, 흑연, 다이아몬드상 카본과 같은 카본계 물질을 전자 방출부로 형성한 예가 개발되고 있다. SUMMARY Using the of FEA type electron emission device has the work function (work function) is low or the aspect ratio (aspect ratio) is the principle which is easily electrons are emitted by an electric field in vacuum when used for a material with an electron source, molybdenum (Mo) or silicon (Si), etc. an example is developed to form a carbon-based material as the main material is ppojyok a tip structure or a carbon nanotube, graphite, diamond-like carbon to the front end portion in the electron emission.
상기에서 팁 구조물은 알려진 바와 같이 반도체 제조 공정, 즉 ①팁 구조물이 배치되는 홀을 형성하기 위한 포토리소그라피 및 에칭 공정, ②팁 구조물을 형성하기 위한 몰리브덴의 증착 공정 등을 통해 제조되므로, 제조 공정이 복잡하고 고가의 장비를 사용해야 하며, 대면적 소자 제작에 불리한 단점이 있다. Since in the tip structure is manufactured through a semiconductor manufacturing process, that is, ① tip structure deposition of molybdenum to form a photolithography and etching process, ② tip structure for forming a hole which is disposed such as is known, the manufacturing process use of complex and expensive equipment, and has a detrimental disadvantage to the large-area device fabrication.
이에 따라, 최근의 FEA형 전자 방출 소자 분야에서는 상술한 카본게 물질 또는 종횡비가 큰 나노미터(㎚) 사이즈 물질을 이용하여 스크린 인쇄와 같은 후막 공 정을 통해 전자 방출부를 형성하는 이른 바 후막형 전자 방출부를 연구 개발하고 있다. Accordingly, in recent years of the FEA type electron emission device in the field of the above-described carbon to a substance or an aspect ratio of-called thick-film-type electron to form the electron emission through such a thick film fair as screen printing using a large-nm (㎚) size material release and parts of research and development.
FEA형 전자 방출 소자는 통상적으로 제 1 기판과 제 2 기판이 서로 대향하여 배치되고, 제 1 기판 위에는 캐소드 전극이 형성되고, 캐소드 전극에 전자 방출부가 형성되고, 캐소드 전극 위로 전자 방출부를 노출시키는 개구부가 각각 구비된 절연층과 게이트 전극이 형성되며, 제 2 기판 위에는 애노드 전극과 형광층이 형성된 구조로 이루어진다. Opening for FEA type electron emission device is generally first being disposed so as to face two to each other the first and second substrates, a first and a cathode electrode formed on the substrate, and the electron-emitting portion is formed on the cathode electrode, the cathode electrode over the electron-emitting expose the that is an insulating layer and a gate electrode formed respectively provided, made of a second anode electrode and a fluorescent layer is formed on the substrate structure.
이로써 캐소드 전극과 게이트 전극에 소정의 구동 전압을 인가하면, 두 전극간 전위 차에 의해 전자 방출부 주위에 전계가 형성되어 이로부터 전자가 방출되고, 방출된 전자들은 애노드 전극에 인가된 고전압(대략, 수백∼수천 볼트)에 이끌려 제 2 기판으로 향하면서 형광층에 충돌하여 이를 발광시킨다. Thereby applying a predetermined driving voltage to the cathode electrode and the gate electrode, the two electrodes between a potential difference and an electric field is formed in the peripheral region E emitted by and electrons are emitted therefrom, the emitted electrons are applied to the anode electrode a high voltage (approximately , hundreds to heading to the second substrate drawn to several thousand volts) hit the phosphor layer to emit them.
그런데, FEA형 전자 방출 소자가 상술한 후막형 전자 방출부를 구비하는 경우에는 전자 방출부의 두께로 인해 절연층을 충분한 두께로 형성하는 것이 전자 방출 특성상 유리한 점이 있다. By the way, in the case of comprising a FEA type electron emission device has the above-described thick-film-type electron emitter is advantageous to form the insulating layer with a sufficient thickness due to the thickness of the electron-emitting portion electron emission characteristic point. 이는 절연층이 충분한 두께로 형성되어 게이트 전극이 전자 방출부에 대해 충분한 높이를 두고 위치할 때에, 전자 방출부로부터 전자빔 퍼짐을 억제하면서 전자들을 양호하게 방출시킬 수 있기 때문이다. This is because the insulating layer is formed to a thickness sufficient gate electrode at this time be located at a sufficient height for the electron emitting portions, can be suppressed, while an electron beam spreads from the electron-emitting unit preferably emit electrons.
그럼에도 불구하고, 상술한 전자 방출 소자에서는 제 1 기판의 전자 방출부에서 방출된 전자들이 제 2 기판으로 향할 때 전자들의 빔퍼짐이 발생하여, 방출된 전자들 중 일부가 해당 화소에 대응하는 형광층이 아닌 인접한 화소의 다른 형광층 에 도달하여 이를 발광시킴으로써 화면의 색 재현성을 저하시키는 문제가 있다. Nevertheless, the above-described electron-emitting device in the fluorescent layer when the electron emitted from the electron-emitting region of the first substrate are directed to a second substrate by the beam spread of the electrons occurs, some of the emitted electrons corresponding to the pixel to reach the two different fluorescent layers of adjacent pixels rather than a problem of lowering the color reproducibility of the display by the light-emitting them.
이를 해결하기 위해 종래 전자 방출 소자에서는 제 1 기판의 게이트 전극 위에 절연층의 개재 하에 전자빔 제어를 위한 집속 전극을 형성한 구조를 적용하고 있다. In the conventional electron-emitting device in order to solve this problem it is to apply the structure in which a focusing electrode for controlling the electron beam under the interposition of an insulating layer on the gate electrode of the first substrate. 설명의 편의를 위해, 캐소드 전극과 게이트 전극 사이에 위치하는 절연층을 제 1 절연층이라 하고, 게이트 전극과 집속 전극 사이에 위치하는 절연층을 제 2 절연층이라고 할 때, 제 2 절연층은 게이트 전극과 집속 전극 사이를 절연시켜 두 전극간 통전을 방지하고 집속 전극이 전자 방출부에 대해 일정한 높이를 확보하도록 하는 역할을 하며, 집속 전극과 제 2 절연층에는 각각의 개구부가 형성되어 전자빔 이동 경로를 제공한다. For ease of illustration, as the insulating layer a first insulating layer located between the cathode electrodes and the gate electrodes, when the insulating layer located between the gate electrode and the focusing electrode as the second insulating layer, a second insulating layer preventing the gate electrode and the focusing electrode energizing the electrodes cross to insulate between the focusing electrode is responsible for to ensure a constant height for the electron-emitting region, and the focusing electrode and the second insulating layer is moved, each aperture is formed in the electron beam It provides a path.
이에 따라, 전자 방출부에서 방출된 전자들이 제 2 절연층과 집속 전극의 개구부를 통과하면서 집속 전극의 전위에 의해 전자들의 발산각이 감소되어 빔퍼짐이 방지되므로 집속이 이루어지게 된다. Accordingly, the divergence angles of the electrons by the potential of the focusing electrode and the electron emitted from the electron-emitting portion to pass through the opening of the second insulating layer and the focusing electrode is reduced becomes the focusing is done because the beam spread is prevented.
이와 같은 전자 방출 소자에서 보다 우수한 전자빔 집속 효율을 얻기 위해서는, 게이트 전극과 집속 전극을 절연하는 제 2 절연층을 충분한 두께를 가지는 후막으로 형성하여, 집속 전극이 전자 방출부에 대해 큰 높이를 확보하도록 해야 한다. In order to obtain such an electron-emitting device superior electron beam focused on the efficiency, to form a second insulating layer for insulating the gate electrode and the focusing electrode by thick film having a sufficient thickness, the focusing electrode so as to obtain a height for the electron-emitting portion Should be. 여기서, 후막은 1㎛ 이상의 두께를 갖는 막을 의미한다. Here, the thick-film means a film having a thickness 1㎛ or more.
그러나, 절연층들을 모두 후막으로 형성하게 되면, 연속적으로 발생하는 후막의 형성 공정으로 인해 적층 절연층 구조의 안정성이 저하되어 전자빔 집속 효율을 높이는데 한계가 있다. However, when formed as a thick film all of the insulating layer, it is due to the thick-film formation process of which is continuously generated decreases the stability of the laminated insulating layer structure, there is a limit in increasing the electron beam focusing efficiency. 이는 하나의 절연층을 형성한 상태에서 다른 절연층을 형성하게 되면 나중에 형성되는 절연층의 소성 온도로 인해 먼저 형성된 절연층과 게이트 전극의 변형 내지는 붕괴가 야기되기 때문이다. This is because if the formation of other insulating layer in a state of forming a single insulating layer is naejineun collapse deformation of the insulating layer and a first gate electrode formed due to the firing temperature of the insulating layer to be formed later caused.
따라서, 본 발명은 상술한 바와 같은 종래의 문제점을 해결하기 위한 것으로, 전자 방출부의 막 두께에 관계없이 적층 절연층 구조의 안정성을 확보하여 전자빔 집속 효율을 높일 수 있는 전자 방출 소자를 제공하는데 그 목적이 있다. Accordingly, the present invention aims to provide that for solving the conventional problems, which can improve the electron beam focusing efficiency and ensure the stability of the laminated insulating layer structure, regardless of the electron-emitting portion thickness of the electron-emitting device as described above there is.
상술한 기술적 과제를 달성하기 위한 본 발명의 일 측면에 따르면, 본 발명의 목적은 서로 대향하여 배치되는 제 1 기판과 제 2 기판; According to one aspect of the present invention for achieving the above-mentioned technical problem, and an object of the present invention includes a first substrate and a second substrate disposed opposite to each other; 제 1 기판 위에서 제 1 절연층을 사이에 두고 서로 절연된 상태로 배치되는 캐소드 전극 및 게이트 전극; The cathode electrodes and the gate electrode are arranged in a place isolated each other between a first insulating layer on the first substrate; 캐소드 전극에 전기적으로 연결되는 전자 방출부; Electron emitting portions electrically connected to the cathode electrode; 전자 방출부를 개방시키며 전자 방출부 위에 형성되는 집속 전극; Electron emitting an opening sikimyeo focusing electrode formed over the electron-emitting portion; 캐소드 전극 및 게이트 전극 중 어느 하나의 전극과 집속 전극 사이에 배치되는 제 2 절연층을 포함하며, 제 1 절연층과 제 2 절연층은 각각 1㎛ 이상의 두께를 가지고, 제 1 절연층이 제 2 절연층의 소성 온도보다 약 50℃ 이상 높은 소성 온도를 가지거나, 제 2 절연층의 연화점보다 약 30℃ 이상 높은 연화점을 가지는 전자 방출 소자에 의해 달성될 수 있다. Including a cathode electrode and a gate electrode, the second insulating layer disposed between any one electrode and the focusing electrode of, and has a first insulating layer and second insulating layer are each 1㎛ or more thickness, the first insulating layer is a second at least about 50 ℃ than the firing temperature of the insulating layer of a high sintering temperature, or at least about 30 ℃ than the softening point of the second insulating layer can be achieved by the electron-emitting device having a high softening point.
여기서, 제 1 절연층은 제 2 절연층의 소성 온도보다 높은 연화점을 가지고, 제 2 절연층은 약 5㎛ 이상의 두께를 갖는다. Here, the first insulating layer have a higher softening point than the firing temperature of the second insulating layer, the second insulating layer has a thickness of at least about 5㎛.
또한, 제 1 기판으로부터 캐소드 전극, 제 1 절연층 및 게이트 전극이 순차적으로 형성되고, 제 1 절연층과 게이트 전극이 캐소드 전극의 일부 표면을 노출시키는 각각의 개구부를 구비하며, 노출된 캐소드 전극 위로 전자 방출부가 위치할 수도 있고, 제 1 기판으로부터 게이트 전극, 제 1 절연층 및 캐소드 전극이 순차적 으로 형성되고, 전자 방출부가 캐소드 전극의 일측 가장자리와 접촉하여 위치할 수도 있다. Further, a is a cathode electrode, the first insulating layer and a gate electrode formed in order from the first substrate, the first insulating layer and the gate electrode is provided with a respective opening for exposing a part of the surface of the cathode electrode, the exposed cathode electrode over may be electron emitting portion is located, the gate electrode, a first insulating layer, and a cathode electrode is formed from a first substrate in sequence, it is also possible to add the electron-emitting position in contact with one side edge of the cathode electrode.
또한, 본 발명의 다른 측면에 따르면, 본 발명의 목적은 서로 대향하여 배치되는 제 1 기판과 제 2 기판; Further, according to another aspect of the invention, it is an object of the present invention includes a first substrate and a second substrate disposed opposite to each other; 제 1 기판 위에서 제 1 절연층을 사이에 두고 서로 절연된 상태로 배치되는 캐소드 전극 및 게이트 전극; The cathode electrodes and the gate electrode are arranged in a place isolated each other between a first insulating layer on the first substrate; 캐소드 전극에 전기적으로 연결되는 전자 방출부; Electron emitting portions electrically connected to the cathode electrode; 전자 방출부를 개방시키며 전자 방출부 위에 형성되는 집속 전극; Electron emitting an opening sikimyeo focusing electrode formed over the electron-emitting portion; 캐소드 전극 및 게이트 전극 중 어느 하나의 전극과 집속 전극 사이에 배치되는 제 2 절연층을 포함하며, 제 1 절연층과 제 2 절연층은 각각 1㎛ 이상의 두께를 가지고, 제 1 절연층이 상기 제 2 절연층의 소성 온도보다 약 50℃ 이상 높은 소성 온도와 제 2 절연층의 연화점보다 약 30℃ 이상 높은 연화점을 가지며, 제 1 절연층의 연화점이 제 2 절연층의 소성 온도보다 높은 전자 방출 소자에 의해 달성될 수 있다. A second insulating layer of the cathode electrode and a gate electrode disposed between any one electrode and the focusing electrodes, and has a first insulating layer and the second insulation layer is thicker than each 1㎛, the first insulating layer is the first at least about 50 ℃ than the firing temperature of the second insulating layer the high sintering temperature and the second dielectric at least about 30 ℃ than the softening point of the layer has a high softening point, the first insulating softening point high electron emission than the sintering temperature of the second insulating layer of the floor element It can be achieved by.
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예를 보다 상세하게 설명한다. With reference to the accompanying drawings will be described in detail preferred embodiments of the invention.
먼저, 도 1 및 도 2를 참조하여 본 발명의 실시예에 따른 전자 방출 소자를 설명한다. First, reference is made to Figures 1 and 2 to describe the electron-emitting device according to an embodiment of the invention.
도면을 참조하면, 유리와 같은 투명한 재질로 이루어진 제 1 기판(10)과 제 2 기판(20)이 다수의 스페이서(30)에 의해 진공 영역을 사이에 두고 서로 대향하여 배치된다. Referring to the figures, transparent material, the first substrate 10 and second substrate 20 made of such as glass is interposed between the vacuum region by a plurality of spacers 30 are disposed for facing each other.
제 1 기판(10)에는 전계 형성으로 전자를 방출하는 구조가 제공되고, 제 2 기판(20)에는 전자에 의해 가시광을 내어 임의의 발광 또는 표시 작용을 하는 구조가 제공된다. The first substrate 10 has a structure for emitting electrons by the electric field formed is provided, the second substrate 20 is provided with a structure in which an arbitrary light emitting operation or a display taking the visible light by the electrons.
좀 더 구체적으로, 제 1 기판(10)에는 캐소드 전극(11)들이 제 1 방향(도면의 y 방향)을 따라 스트라이프 패턴으로 형성되고, 캐소드 전극(11)을 덮도록 제 1 기판(10) 전면에 제 1 절연층(12)이 형성되며, 제 1 절연층(12) 위에는 제 1 방향과 교차하는 제 2 방향을 따라 스트라이프 패턴으로 게이트 전극(13)들이 형성된다. More specifically, the first substrate 10, the cathode electrode 11 to the first direction along the (y direction in the drawing) is formed in a stripe pattern, the front first substrate 10 to cover the cathode electrode 11 a first insulating layer 12 is formed, the first insulating layer a first second direction of the gate electrode 13 in a stripe pattern along a direction crossing the above (12) are formed.
그리고, 캐소드 전극(11)과 게이트 전극(13)이 교차하는 부분을 화소 영역으로 정의하면, 화소 영역의 캐소드 전극(11) 위에는 적어도 하나의 전자 방출부(16)가 형성되고, 제 1 절연층(12)과 게이트 전극(13)에는 전자 방출부(16)에 대응하는 개구부(12a, 13a)가 각각 형성되어 전자 방출부(16)가 노출되도록 한다. And, defining the portion at which the cathode electrodes 11 and gate electrodes 13 cross the pixel region formed on the cathode electrode 11 of the pixel region is formed at least one of the electron emitting portions 16, the first insulating layer such that the (12) and the gate electrode 13 is provided with openings (12a, 13a) the electron emitting portion 16 are formed respectively corresponding to the electron emitting portion 16 is exposed.
도 1에서는 화소 영역 마다 3개의 전자 방출부가 위치하고, 제 1 절연층과 게이트 전극의 개구부 형상이 사각인 경우를 도시하였으나, 전자 방출부의 개수와 제 1 절연층 및 게이트 전극의 개구부 형상은 도시한 예에 한정되지 않고 다양하게 변형 가능하다. Located also in each pixel region in the first portion 3 of the electron-emitting first, but showing the insulation layer and the gate electrode in the case where the opening shape is rectangular, the electron-emitting portion number of the first insulating layer and the opening shape of the gate electrode is illustrated example it is not limited to the various possible modifications.
본 실시예에서 전자 방출부(16)는 카본 나노튜브, 그라파이트(graphit), 다이아몬드(Diamond), 다이아몬드상 카본(Diamond Liked Carbon), C 60 (fulleren) 등의 카본계 물질과, 카본 나노튜브, 그라파이트 나노파이버(Nano fiber), 실리콘 나노와이어(Nano wire) 등의 나노미터 사이즈 물질 중 선택되는 어느 하나 또는 이들의 조합으로 이루어질 수 있다. The electron-emitting portion 16 is a carbon nanotube, graphite (graphit), diamond (Diamond), diamond-like carbon (Diamond Liked Carbon), C 60 (fulleren) carbon-based material, a carbon nanotube, such as in this embodiment, graphite nanofiber can be made of any or a combination thereof are selected from nanometer-size materials, such as (nano fiber), silicon nanowires (nano wire).
또한, 전자 방출부의 제조법으로는 상술한 전자 방출 물질에 비히클과 바인더 등의 유기물을 혼합하여 인쇄에 적합한 점도를 갖는 페이스트상 혼합물을 제작하고, 이 혼합물을 스크린 인쇄 후 건조 및 소성하는 과정이 적용될 수 있다. Further, the electron-emitting portion preparation is to a mixture of organic material, such as a vehicle and a binder to the above-described electron emission material produced a pasty mixture with a viscosity suitable for printing, and the mixture is the process of drying and firing, to be applied after the screen printing have. 전자 방출부는 이러한 후막형 이외에 박막형으로도 이루어질 수 있는데, 박막형 전자 방출부는 화학기상증착, 스퍼터링 또는 카본 나노튜브의 직접 성장법 등에 의해 제조될 수 있다. There electron-emitting portion can be made with thin film in addition to such a thick film, thin-film electron-emitting portion can be made by chemical vapor deposition, sputtering or direct deposition method of the carbon nanotube.
게이트 전극(13)과 제 1 절연층(12) 위에는 제 2 절연층(14)과 집속 전극(15)이 형성되고, 제 2 절연층(14)과 집속 전극(15)에도 전자 방출부(16)가 노출되도록 개구부(14a, 15a)가 각각 형성된다. The formed on the gate electrode 13 and first insulating layer 12, second insulating layer 14 and the focusing electrode 15 is formed on the second insulating layer 14 and focusing electrode 15 in the electron-emitting portion (16 ) it is respectively formed with an opening (14a, 15a) so as to be exposed. 제 2 절연층(14)과 집속 전극(15)은 도 1에 도시된 바와 같이 각 화소마다 하나의 개구부를 형성할 수 있으며, 다른 실시예로서 각각의 전자 방출부에 대응하는 개구부를 형성할 수 있다. A second insulating layer 14 and focusing electrode 15 may form a single aperture for each pixel as shown in Figure 1, to form an opening corresponding to each electron emitting portion according to another embodiment have. 후자의 경우 제 2 절연층(14)과 집속 전극(15)의 개구부는 제 1 절연층(12) 및 게이트 전극(13)의 개구부(12a, 13a)와 일대일로 대응 배치된다. The opening of the latter case, the second insulating layer 14 and focusing electrode 15 are disposed corresponding to the opening portion (12a, 13a) of the one-to-one with the first insulating layer 12 and gate electrode 13.
여기서, 제 2 절연층(14)은 집속 전극(15)의 전자빔 집속 효율 향상을 위해 약 5㎛ 이상의 두께를 갖는 것이 바람직하다. Here, the second insulating layer 14 preferably has a thickness of about 5㎛ or more for an electron beam focusing efficiency of the focusing electrode (15).
도면에서는 집속 전극(15)이 제 1 기판(10) 전체에 형성되는 경우를 나타내었지만, 집속 전극(15)이 임의의 패턴으로 구분되어 복수개로 구비될 수도 있는데, 이 경우에도 제 2 절연층(14)과 집속전극(15)에는 상술한 것과 동일한 개구부(14a, 15a)가 형성되어 제 1 기판(10) 상에 전자 방출부(16)가 노출되도록 한다. In the drawings although the case where the focusing electrode 15 is formed on the entire first substrate 10, the focusing electrode 15 is divided into an arbitrary pattern there may be provided a plurality of second insulating layer in this case ( 14) and the focusing electrode 15 are formed with the same opening (14a, 15a) as described above so that the electron-emitting portion 16 exposed on the first substrate 10.
한편, 상기에서는 게이트 전극(13)이 제 1 절연층(12)을 사이에 두고 캐소드 전극(11) 상부에 위치하는 경우를 설명하였으나, 도 3에 도시된 바와 같이 제 1 기판(10)으로부터 게이트 전극(13')이 제 1 절연층(12)을 사이에 두고 캐소드 전극(11') 하부에 위치하는 경우도 가능하며, 이 경우 전자 방출부(16)는 캐소드 전극(11')의 일측 가장자리와 접촉하여 형성된다. On the other hand, the In from the gate electrode 13, a first insulating layer of the first substrate 10 as shown to in Figure 3 has been described is positioned on the upper cathode electrode (11) across the 12 gate one side edge of the electrode (13 ') a first insulating layer interposed between the (12) the cathode (11' can also be the case located below), in which case the electron-emitting portion 16 is the cathode electrode (11 ') It is formed in contact with.
도 3에 도시한 구조에 있어서도 제 1 절연층(12)과 캐소드 전극(11') 위로 제 2 절연층(14)과 집속 전극(15)이 형성되며, 제 2 절연층(14)과 집속 전극(15)에 전자 방출부(16)를 노출시키는 각각의 개구부(14a, 15a)가 형성된다. Is also in the structure shown in Figure 3 a first insulating layer 12 and the cathode electrode (11 ') over the second insulating layer 14 and focusing electrode 15 is formed, the second insulating layer 14 and the focusing electrode each opening (14a, 15a) for exposing an electron-emitting portion 16 to 15 is formed.
본 실시예의 전자 방출 소자에서는 전자 방출부(16)에 대해 게이트 전극(13)과 집속 전극(15)이 충분한 높이를 확보하도록 제 1 및 제 2 절연층(12, 14)이 서로 다른 열 특성을 갖는 후막으로 이루어진다. In the electron-emitting device of this embodiment the first and second insulating layers (12, 14) have different thermal characteristics gate electrode 13 and focusing electrode 15 to the electron emitting portion 16 is to ensure a sufficient height It consists of having a thick film. 이때, 후막은 1㎛ 이상의 두께를 갖는 막을 의미한다. At this time, the thick-film means a film having a thickness 1㎛ or more.
특히, 본 실시예의 전자 방출 소자에서는 제 1 및 제 2 절연층(12, 14)의 적층 구조가 안정성을 갖도록 제 1 절연층(14)이 제 2 절연층(12)의 소성 온도 보다 약 50℃ 이상 높은 소성 온도를 가지는 절연물질로 이루어진다. In particular, about 50 ℃ than the sintering temperature of the present embodiment, the electron-emitting devices in the first and second insulating layers 12 and 14, the first insulating layer 14. The second insulating layer 12, a laminated structure to have the stability of the or more is made from a dielectric material having a high baking temperature.
도 4 내지 도 6은 제 1 및 제 2 절연층(12, 14)의 소성 온도에 따른 게이트 전극(13)의 변형 정도를 나타낸 도면으로, 도 4는 제 1 및 제 2 절연층(12, 14)이 550℃로 동일한 소성 온도를 가지는 경우, 도 5는 제 1 절연층(12)이 550℃, 제 2 절연층(14)이 570℃의 소성 온도를 가지는 경우, 도 6은 제 1 절연층(12)이 520℃, 제 2 절연층(14)이 570℃의 소성 온도를 가지는 경우를 나타내는데, 제 2 절연층 (14)에 비해 제 1 절연층(12)의 소성 온도가 50℃ 높은 도 5의 경우에 게이트 전극의 변형이 가장 작게 나타남을 알 수 있다. 4 to 6 are first and second insulating layer as a view of the amount of deformation of the gate electrode 13 in accordance with a baking temperature of 12, 14, 4 is the first and second insulating layers (12, 14 ) in this case, with the same firing temperature to 550 ℃, Figure 5 is a first insulating layer (for 12) 550 ℃, the second insulating layer 14 has a firing temperature of 570 ℃, 6 is a first dielectric layer 12 is 520 ℃, the second insulating layer 14 is for indicating, if having a firing temperature of 570 ℃, the second baking temperature of the first insulating layer 12 than the insulating layer 14 50 ℃ high degree the deformation of the gate electrode in the case of five can be seen to appear as small.
또한, 제 1 절연층(12)은 제 2 절연층(14)의 프릿(frit)이 녹기 시작하는 온도, 이른 바 연화점(softening temperature; Ts) 보다 약 30℃ 이상 높은 연화점을 가지는 절연물질로 이루어질 수도 있다. In addition, the first insulating layer 12 second insulating layer 14 frit (frit) temperature that begins to melt,-called softening point (softening temperature; Ts) than be made of an insulating material having a high softening point above about 30 ℃ may. 이때, 물질의 소성 온도는 통상적으로 연화점 보다 약 50℃ 정도 높은 온도로 설정하나 물질에 따라 완전히 일치하는 것은 아니다. In this case, the firing temperature of the material is usually set to approximately 50 ℃ higher than the softening point temperature of one does not completely match, in the material.
또 다른 한편으로, 제 1 절연층(12)은 제 2 절연층(14)의 소성 온도 보다 50℃ 이상 높은 소성 온도를 가지고 제 2 절연층(14)의 연화점 보다 30℃ 이상 높은 연화점을 가지는 절연물질로 이루어질 수도 있는데, 이 경우에는 제 1 절연층(14)의 연화점이 제 2 절연층(14)의 소성 온도보다 높은 것이 바람직하다. On the other hand, the first insulating layer 12 is isolated with a second insulating high softening point above 30 ℃ than the softening point of the layer 14 is more than 50 ℃ the second insulating layer 14 has a higher sintering temperature than the sintering temperature of There may be made of a material, in this case, it is preferred that the softening point of the first insulating layer 14 is higher than the sintering temperature of the second insulating layer 14.
이러한 제 1 절연층(12)과 제 2 절연층(14)은 PbO, SiO 2 , B 2 O 3 , Al 2 O 3 , TiO 2 등과 같이 프릿을 주 성분으로 하는 산화물질로 각각 이루어지며, 각 물질의 조성 비율을 적절하게 변화시키면 상술한 바와 같은 소성 온도와 연화점이 서로 다른 제 1 절연층(12)과 제 2 절연층(14)을 형성할 수 있다. The first insulating layer 12 and the second insulating layer 14 becomes each composed of oxide material to the frit in the main component, such as PbO, SiO 2, B 2 O 3, Al 2 O 3, TiO 2, each when properly changing the composition ratio of the material can form a firing temperature and the softening point is different first insulating layer 12 and the second insulating layer 14 as described above.
다음으로, 제 1 기판(10)에 대향하는 제 2 기판(20)의 일면에는 형광층(21), 적색(R), 녹색(G), 청색(B) 형광체로 구성된 형광층(21)이 임의의 간격을 두고 형성되고, 형광층(21) 사이로 화면의 콘트라스트 향상 등을 위한 차광층으로서 흑색층(22)이 형성될 수 있다. Next, the fluorescent layer 21, one surface is composed of the fluorescent layer 21, the red (R), green (G), and blue (B) fluorescent material of the second substrate 20 facing the first substrate 10 is It is formed at an arbitrary interval, a black layer 22 as a light-shielding layer for such improved contrast on the screen between the phosphor layer 21 can be formed. 형광층(21)과 흑색층(22)을 덮으면서 제 2 기판(20)의 전면으로 알루미늄(Al)과 같은 금속 재질로 이루어진 애노드 전극(23)이 형성된다. A fluorescent layer 21 and a front aluminum metal anode electrode 23 is made of, such as (Al) of the second substrate 20 while covering the black layer 22 is formed.
여기서, 애노드 전극(23)은 외부로부터 전자빔 가속에 필요한 전압을 인가 받으며, 메탈백(metal back) 효과에 의해 화면의 휘도를 높이는 역할을 한다. Here, the anode electrode 23 receives application of a voltage required for accelerating electron beams from the outside, and serves to increase the brightness of the screen by the metal back (metal back) effect.
이러한 애노드 전극(23)은 금속재질 대신 ITO와 같은 투명재질로 형성될 수도 있는데, 이 경우에는 애노드 전극(23)이 제 2 기판(20) 상에 먼저 형성되고 그 위로 형광층(21)과 흑색층(22)이 형성된다. There these anode electrode 23 may be formed of a transparent material such as ITO, instead of metal materials, in this case, the anode electrode 23 is first formed on the second substrate 20, the top phosphor layers 21 and black the layer 22 is formed.
또 다른 한편으로는, 제 2 기판(20) 상에 투명재질의 애노드 전극과 메탈백(metal back)으로서의 금속박막이 모두 형성될 수도 있는데, 이 경우 투명재질의 애노드 전극은 제 2 기판(20) 전체에 형성되거나 소정의 패턴으로 구분되어 복수개로 형성될 수 있다. On the other hand, the second There second substrate 20, a transparent material anode and the metal back of the image (metal back) may be formed both as a metal thin film, an anode electrode in this case the transparent material is a second substrate (20) formed on the whole or divided in a predetermined pattern it may be formed of a plurality.
이와 같이 구성되는 전자 방출 소자는, 캐소드 전극(11)과 게이트 전극(13)에 구동 전압을 인가하면, 두 전극간 전압차에 의해 전자 방출부(12) 주위에 전계가 형성되어 이로부터 전자가 방출되고, 방출된 전자들은 집속 전극(15)에 인가된 전압, 예컨대 수십 볼트의 (-) 전압에 의해 발산각이 감소되어 집속이 이루어지고, 집속된 전자들은 애노드 전극(22)에 인가된 고전압에 이끌려 제 2 기판(20)으로 향하면서 해당 화소의 형광층(21)에 도달하고 이를 발광시킨다. The electron-emitting device configured as described above, by applying a drive voltage to the cathode electrode 11 and gate electrode 13, by the voltage difference between the two electrodes an electric field is formed around the electron emission portion 12, the electron therefrom release is, the voltage applied to the emitted electrons are focusing electrode 15, for example of tens of volts (-) are each reduced dissipation by the voltage comprises a focused, the focused electrons the high voltage applied to the anode electrode 22 drawn by the heading to the second substrate 20, thereby reaching the fluorescent layer 21 of the pixel and light emission it.
이때, 제 1 및 제 2 절연층(12, 14)이 후막으로 이루어져 전자 방출부(16)에 대해 게이트 전극(13)과 집속 전극(15)이 충분한 높이를 가질 뿐만 아니라 제 1 및 제 2 절연층(12, 14)의 소성 온도 및/또는 연화점 차이로 인해 이들이 안정적인 적층 구조를 가지기 때문에, 전자빔의 집속 효율이 높아지는 장점이 예상된다. In this case, the first and second insulating layers (12, 14) is made of a thick film not only has the gate electrode 13 and focusing electrode 15 is high enough for the electron-emitting portion 16 first and second insulating because layers 12 and 14 they gajigi a stable stack structure due to the firing temperature and / or softening point difference, the advantage of the focusing efficiency of the electron beam is increased is expected.
다음으로, 도 7a 내지 도 7d를 참조하여 본 발명의 실시예에 따른 전자 방출 소자의 제조방법을 설명한다. Next, the manufacturing method of the electron-emitting device according to an embodiment of the present invention will be described with reference to Figures 7a to 7d for example.
도 7a에 도시된 바와 같이, 제 1 기판(10) 위에 제 1 방향을 따라 스트라이프 패턴으로 캐소드 전극(11)을 형성하고, 캐소드 전극(11)을 덮으면서 제 1 기판(10)의 전면에 제 1 절연층(12)을 형성한다. As shown in Figure 7a, the first substrate 10 in a first direction over to form a cathode electrode 11 in a stripe pattern, while covering the cathode electrodes 11. The front of the first substrate 10 to form a first insulating layer 12. 여기서, 제 1 절연층(12)은 스크린 인쇄, 라이네이팅 및 닥터 블레이드 등에 의해 후막으로 형성한다. Here, the first insulating layer 12 is formed in a thick film by screen printing, and doctor blade rayineyiting.
또한, 제 1 절연층(12)은 이후 형성될 제 2 절연층과 열 특성이 서로 다른 물질로 이루어지는데, 바람직하게는 제 2 절연층의 소성 온도보다 약 50℃ 이상 높은 소성 온도를 가지는 산화물질이나 제 2 절연층의 연화점보다 약 30℃ 이상 높은 연화점을 가지는 산화물질을 이용하여 형성할 수 있다. In addition, the first insulating layer 12 is the second insulation layer and the thermal property is through interaction of different materials, preferably oxide materials having at least about 50 ℃ higher sintering temperature than the sintering temperature of the second insulating layer be formed after the or at least about 30 ℃ than the softening point of the second insulating layer may be formed using an oxide material having a high softening point.
또한, 제 1 절연층(12)은 제 2 절연층의 소성 온도 보다 50℃ 이상 높은 소성 온도를 가지고 제 2 절연층의 연화점 보다 30℃ 이상 높은 연화점을 가지는 절연물질을 이용하여 형성할 수도 있는데, 이 경우에 제 1 절연층(14)의 연화점이 제 2 절연층의 소성 온도보다 높은 것이 바람직하다. In addition, the first insulating layer 12 there may be formed using an insulating material having a high softening point above 30 ℃ than the softening point of the second insulating layer has a more than 50 ℃ higher sintering temperature than the sintering temperature of the second insulating layer, in this case the softening point of the first insulating layer 14 is preferably higher than the sintering temperature of the second insulating layer.
그 다음, 제 1 절연층(12) 위에 예컨대 크롬(Cr)과 같은 금속재질로 이루어진 게이트 전극 물질층을 형성하고, 포토리소그라피 공정 및 에칭공정에 의해 게이트 전극 물질층을 패터닝하여, 캐소드 전극(11)과 교차하는 제 2 방향을 따라 스트라이프 패턴으로 형성되면서 캐소드 전극(11)과의 교차 영역, 즉 화소 영역에 개구부(13a)를 가지는 게이트 전극(13)을 형성한다. And the pattern the next, the first insulating layer 12 over, for example chromium (Cr) and the gate the gate electrode material layer by forming an electrode material layer, and a photolithography step and the etching step consisting of a metallic material such as, a cathode electrode (11 ) and in a second direction crossing as formed in a stripe pattern to form the gate electrode 13 having the opening (13a) in the crossing area, i.e., a pixel area of the cathode electrode 11.
도 7b에 도시된 바와 같이, 게이트 전극(13)을 덮도록 제 1 절연층(12) 위에 제 2 절연층(14)을 형성한다. As shown in Figure 7b, to form a second insulating layer 14 on the first insulating layer 12 to cover the gate electrode 13. 여기서, 제 2 절연층(14)은 제 1 절연층(12)과 마찬가지로 스크린 인쇄, 라이네이팅 및 닥터 블레이드 등에 의해 후막으로 형성하는데, 바람직하게는 약 5㎛ 이상의 두께로 형성한다. Here, the second insulating layer 14 is formed of a first insulating layer 12 and, like screen printing, doctor rayineyiting and to form a thick film by a blade, preferably a thickness at least about 5㎛.
그 다음, 제 2 절연층(14) 위에 집속 전극(15)을 형성하고, 포토리소그라피 공정 및 식각공정에 의해 게이트 전극(13)의 개구부(13a)에 대응하는 부분의 집속 전극(15)을 식각하여 집속 전극(15)에 개구부(15a)를 형성한다. Then, the second insulating layer 14 on top to form a focusing electrode 15, photolithography and etching to the focusing electrode 15 in the portion corresponding to the opening portion (13a) of the gate electrode 13 by the etching process, to form an opening (15a) in the focusing electrode (15).
도 7c에 도시된 바와 같이, 집속 전극(15)의 개구부(15a)에 의해 노출된 제 2 절연층(14)을 식각하여 제 2 절연층(14)에 개구부(14a)를 형성하고, 게이트 전극(13)의 개구부(13a)에 의해 노출된 제 1 절연층(12)을 식각하여 제 1 절연층(12)에 개구부(12a)를 형성한다. A, forming a second insulating layer (14) opening (14a) on the second insulating layer 14 by etching the exposed by the opening (15a) of the focusing electrode 15, and gate electrodes, as shown in Figure 7c forming a first insulating layer having an opening (12a) on the first insulating layer 12 by etching (12) exposed by the opening (13a) of 13. 이로써 전자 방출부(16)가 형성될 캐소드 전극(11)의 일부 표면을 노출시킨다. Thereby exposing a part of the surface of the cathode electrode 11 is formed on the electron-emitting portion (16).
도 7d에 도시된 바와 같이, 노출된 캐소드 전극(11) 위로 후막형 또는 박막형의 전자 방출부(16)을 형성한다. As it is shown in Figure 7d, thereby forming the exposed cathode electrode 11, the top thick film or thin film of the electron-emitting portion (16).
먼저, 후막형 전자 방출부(16)는 분말 상의 전자 방출 물질에 비히클과 바인더 등의 유기물을 혼합하여 인쇄에 의해 적합한 점도를 갖는 페이스트 상의 전자 방출 물질을 형성하고, 노출된 캐소드 전극(11) 위로 이 전자 방출 물질을 스크린 인쇄한 후 전조 및 소성하는 과정에 의해 형성할 수 있다. First, thick film-type electron-emitting portion 16 is a mixture of organic material, such as a vehicle and binder to the electron-emitting material on the powder over the cathode electrode 11 is formed in the electron-emitting material on the paste, and exposed with a suitable viscosity by a printing after screen printing the electron-emitting material can be formed by a process of precursor and calcined.
다른 한편으로, 후막형 전자 방출부(16)는 ① 전술한 페이스트 상의 전자 방출 물질에 감광성 물질을 더욱 포함시키고, ② 제 1 기판(10)의 전면 상에 이 전자 방출 물질을 스크린 인쇄한 후, ③ 제 1 기판(10)의 후면에 노광 마스크(미도시)를 개재한 상태에서 제 1 기판(10)의 후면을 통해 자외선을 조사하여 캐소드 전극(11) 위에 채워진 전자 방출 물질을 선택적으로 경화시키고, ④ 현상을 통해 경화되지 않은 전자 방출 물질을 제거한 다음, 건조 및 소성하는 과정에 의해 형성할 수 있다. On the other hand, the thick-film-type electron-emitting portion 16 is ① After further comprising a photosensitive substance on the electron emission material on the above-mentioned paste and, ② the first substrate (10) screen printing the electron emission material on the front of, ③ the first substrate 10 back to the exposure mask is irradiated with ultraviolet light through the rear surface of the first substrate 10 in a state via the (not shown), a cathode electrode (11) is selectively hardened by a filled electron-emitting material on the , ④ removal of the electron-emitting material that is not hardened through developing the following, can be formed by a process of drying and firing.
이 경우, 제 1 기판(10)은 투명 기판으로 이루어지고, 캐소드 전극(11)은 ITO(Indium Tin Oxide)와 같은 투명 도전 물질로 이루어진다. In this case, the first substrate 10 is made of a transparent substrate, a cathode electrode 11 is made of a transparent conductive material such as ITO (Indium Tin Oxide).
그리고, 박막형 전자 방출부는 화학기상증착, 스퍼터링 또는 카본 나노튜브의 직접 성장법 등에 의해 형성할 수 있다. Then, the thin-film electron-emitting portion can be formed by chemical vapor deposition, sputtering or direct deposition method of the carbon nanotube.
이와 같이 본 실시예의 제조 방법에서는 후막의 제 1 및 제 2 절연층(12, 14)을 소성 온도 및/또는 연화점이 다른 절연물질을 사용하여 형성하기 때문에, 나중에 형성되는 제 2 절연층(14)의 형성에 의해 제 1 절연층(12)과 게이트 전극(13)의 붕괴 내지 변형이 발생하지 않는다. Since thus formed in this embodiment the manufacturing method uses the first and second insulating layers 12 and 14, the sintering temperature and / or a softening point of another insulating material, a thick film, the second insulating layer 14 to be formed later collapsed to deformation of the first insulating layer 12 and gate electrode 13 by a film forming it does not occur in the. 이에 따라, 후막의 제 1 및 제 2 절연층(12, 14)의 적층 구조를 안정적으로 형성하는 것이 가능해진다. Accordingly, it is possible to form a laminated structure of first and second insulating layers 12 and 14 of the thick film stably.
한편, 상기에서는 전자 방출부가 전계가 가해지면 전자를 방출하는 물질들로 이루어지고, 캐소드 전극과 게이트 전극으로 이루어진 구동 전극들이 전자 방출을 제어하는 FEA형에 대해서 설명하였지만, 본 발명은 이러한 FEA형에만 한정되지 않고 다양하게 변형이 가능하다. On the other hand, wherein the electron-emitting portion is made of the material that an electric field is applied when emitting electrons, a drive electrode made of the cathode electrodes and the gate electrodes has been described in the FEA type for controlling the electron emission, the present invention provides such a FEA type only not only it can be variously modified.
상기에서는 본 발명의 바람직한 실시예에 대하여 설명하였지만, 본 발명은 이에 한정되는 것이 아니고 특허청구범위와 발명의 상세한 설명 및 첨부한 도면의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 본 발명의 범 위에 속하는 것은 당연하다. In the above has been described with a preferred embodiment of the present invention, and the present invention is not limited to this can be carried out in various modifications in the detailed description and the scope of the appended figures of the appended claims and the invention is also the invention It belongs on top of the pan is natural.
이와 같이 본 발명에 따른 전자 방출 소자는 캐소드 전극과 게이트 전극을 절연하는 제 1 절연층과 게이트 전극과 집속 전극을 절연하는 제 2 절연층이 모두 후막으로 이루어지면서 소성 온도 및/또는 연화점 차이를 가지는 서로 다른 물질로 이루어지므로 전자 방출부의 막 두께에 관계없이 적층 구조의 안정성을 확보할 수 있다. Thus, the electron-emitting device according to the invention having a first insulating layer and the gate electrode and the focusing electrode, the second baking temperature and / or softening point difference between the insulating layer are both As made of a thick film for insulation for insulating the cathode electrode and the gate electrode It can be each other ensure the stability of the stacked structure made on a different material, regardless of the electron-emitting portion in the film thickness.
따라서, 본 발명에 따른 전자 방출 소자는 전자빔 집속 효율을 향상시킬 수 있으므로 화면의 색재현성을 개선할 수 있다. Thus, the electron-emitting device according to the present invention can improve the electron beam focusing efficiency and to improve the color reproducibility of the display.
상기 제 1 절연층이 상기 제 2 절연층의 소성 온도보다 약 50℃ 이상 높은 소성 온도를 가지는 전자 방출 소자. The electron-emitting device wherein the first insulating layer having at least about 50 ℃ higher sintering temperature than the sintering temperature of the second insulating layer.
상기 제 1 절연층이 상기 제 2 절연층의 연화점보다 약 30℃ 이상 높은 연화점을 가지는 전자 방출 소자. The electron-emitting device wherein the first insulating layer having at least about 30 ℃ high softening point than the softening point of the second insulating layer.
상기 제 1 절연층이 상기 제 2 절연층의 소성 온도보다 높은 연화점을 가지는 전자 방출 소자. The electron-emitting device wherein the first insulating layer having a higher softening point than the firing temperature of the second insulating layer.
상기 제 2 절연층이 약 5㎛ 이상의 두께를 가지는 전자 방출 소자. The electron-emitting device, wherein said second insulating layer having a thickness of at least about 5㎛.
상기 제 1 기판으로부터 상기 캐소드 전극, 제 1 절연층 및 게이트 전극이 순차적으로 형성되고, 상기 제 1 절연층과 게이트 전극이 상기 캐소드 전극의 일부 표면을 노출시키는 각각의 개구부를 구비하며, 상기 노출된 캐소드 전극 위로 상기 전자 방출부가 위치하는 전자 방출 소자. Wherein the cathode electrode, the first insulating layer and the gate electrode from the first substrate is formed sequentially, the said first insulating layer and the gate electrode and having a respective opening for exposing a part of the surface of the cathode electrode, the exposed the electron-emitting device in which the electron emitting portion is positioned over the cathode.
상기 제 1 기판으로부터 상기 게이트 전극, 제 1 절연층 및 캐소드 전극이 순차적으로 형성되고, 상기 전자 방출부가 상기 캐소드 전극의 일측 가장자리와 접 촉하여 위치하는 전자 방출 소자. The electron-emitting device to become the gate electrode, a first insulating layer, and a cathode electrode formed in order from the first substrate, the electron-emitting portion is positioned tip into contact with the one side edge of the cathode electrode.
상기 전자 방출부는 카본 나노튜브, 그라파이트, 다이아몬드, 다이아몬드상 카본, C 60 , 그라파이트 나노파이버, 실리콘 나노와이어 중 선택되는 어느 하나 또는 이들의 조합으로 이루어지는 전자 방출 소자. The electron-emitting portion made of an electron-emitting device of any one, or a combination thereof is selected from carbon nanotubes, graphite, diamond, diamond-like carbon, C 60, graphite nanofibers, silicon nanowires.
상기 애노드 전극의 어느 일면에 형성되는 형광층을 더욱 포함하는 전자 방출 소자. The electron-emitting device further comprises a fluorescent layer formed on any one surface of the anode electrode.
상기 제 1 절연층의 연화점이 상기 제 2 절연층의 소성 온도보다 높은 전자 방출 소자. The electron-emitting device the softening point of the first insulating layer is higher than the firing temperature of the second insulating layer.


text:
Televised health care debate too little, too late?
It was a campaign promise of President Obama's - and he's taken a lot of heat for not following through.
[cnn-photo-caption image=http://i2.cdn.turner.com/cnn/2010/images/02/08/art.obama.jpg caption=""]
Well, Mr. Obama now says he plans to hold a televised, bipartisan health care meeting on February 25. This move toward transparency comes after the president got strong reviews on the televised question-and-answer session he held with Republicans recently.
President Obama says he wants to go through "all the best ideas" that are out there on health care - including those of Republicans - and move forward with reform.
Leaders of both parties are praising the move - but Republicans say they want to start from scratch on health care reform, something the president says he won't do. Also, some worry this live, televised, half-day meeting will only prolong the process - the Democrats already have plenty of disagreements among themselves in the two versions of the bill.
Since the Democrats' loss of Ted Kennedy's Massachusetts Senate seat, White House officials have been sending mixed messages on health care; saying they might break the bill into smaller parts, or keep it all together, or hold off on action; or just "punch it through" Congress.
Meanwhile it's not clear how much the president's offer to open up the health care meetings will matter this late in the game. A lot of Americans have been turned off by the secret, closed-door nature of negotiations. They expected more from the candidate who vowed to broadcast it all on C-Span. And, don't forget, this televised meeting would probably never happen if Republican Scott Brown wasn't the newest Senator from Massachusetts.
Here's my question to you: Is Pres. Obama's plan for a televised, bipartisan health care meeting too little, too late?
Filed under: Bipartisanship • Health care • President Barack Obama
Pres. Obama renews call for bipartisanship. Is he dreaming?
Talking about bipartisanship makes a nice soundbite; but at the end of the day, it's just that: Talk.
President Obama went into the enemy camp today - going head-to-head for more than an hour at a meeting of House Republicans.
For the most part, it was polite and cordial - how much good it did is an open question.
The President chastised Republicans for opposing him on taxes, health care and the economic stimulus plan. Of the attacks on health care, the president said, "You'd think that this thing was some Bolshevik plot," and "I am not an ideologue."
The Republicans accused Mr. Obama of ignoring their ideas and driving up the debt.
This all follows the State of the Union speech, where President Obama renewed calls for bipartisanship.
The number two House leader, Congressman Eric Cantor, says the president's address to Congress was full of "rhetoric and lecturing." Cantor says he appreciated the offer of bipartisanship, but that Republicans have heard this before.
But after today's meeting, Cantor said this is the kind of discussion they need to have more of.
Cantor has accused the administration of showing "arrogance in ignoring public opinion," and that Congressional Democrats have been no better when it comes to bipartisanship. He insists the Republicans are open to talking and working with the other party.
We'll see.
Sadly, the current political strategy in Washington for both parties seems to be: "I win if I can make the other guy lose."
Here's my question to you: President Obama has renewed his call for bipartisanship. Is he dreaming?
Filed under: Bipartisanship • President Barack Obama
Why is there only bipartisanship when military is involved?
Bipartisanship in Washington is virtually non-existent these days - except for President Obama's new strategy for Afghanistan.
[cnn-photo-caption image=http://i2.cdn.turner.com/cnn/2009/images/12/04/art.marines.afghan.gi.jpg caption="U.S. Marines are pictured wading through a canal in Afghanistan's Helmand Province."]
A new CNN/Opinion Research Corporation Poll - conducted after the president's speech this week - shows his plan wins approval from 63 percent of Democrats, a whopping 72 percent of Republicans and 55 percent of Independents. Gee, with a consensus like that you could actually run the country.
The president is getting thumbs-up from people more inclined to extend their middle fingers when it comes to things Democratic. Karl Rove says that the president's speech "deserves to be cheered" and insists victory is attainable.
Newt Gingrich is out praising President Obama for showing political courage on Afghanistan... in going against the anti-war left in his own party.
This is not to say that there aren't critics of the president's Afghanistan strategy in both parties, but on the whole, he's getting support - at least for now. If it doesn't go as planned, all bets are off. But at least for a few minutes we have the leadership of the country agreeing on something.
And this isn't just about President Obama and Afghanistan. The Democrats had no love lost for President George W. Bush but were mostly afraid to buck him on the wars.
Here's my question to you: Why is it the only time there is bipartisanship is when the military is involved?
Filed under: Bipartisanship • US Military
Why are Democrats' and Obama's approval ratings falling?
As the debate over health care rages on... the American people are increasingly souring on President Obama and the Democrats. A new poll shows the president's approval rating at 51-percent - the lowest of his presidency and down from 61-percent two-months ago.
The Pew poll shows the Democratic Party now has a favorable rating of 49-percent... also down from 59-percent in April and 62-percent in January.
When it comes to the Republican Party - public opinion has remained steady all year at about 40-percent.
Meanwhile it looks like the American people aren't buying into calls for bipartisanship. The poll shows 63-percent of those surveyed say the president and Republicans are not working together on important issues... that's up from 50-percent who felt that way in June.
Although more people blame the Republicans than President Obama for this lack of co-operation, the poll shows a growing number are now faulting the president. 17-percent of Americans say Mr. Obama is to blame... that's up from seven-percent who felt that way in February.
Meanwhile a separate Gallup poll shows the Democratic-led Congress' approval at 31-percent... the lowest reading since February.
With health care eclipsing all else in Washington this summer - it seems as though the president and the Democrats are losing favor with the American people. It will be interesting to see what happens to these numbers if the Democrats decide to "go it alone" like we've been hearing.
Here's my question to you: Why are the Democrats' and President Obama's approval ratings falling?
Filed under: Bipartisanship • Democrats • Health care • Polls • President Barack Obama • Republican Party
What happened to idea of bipartisanship?
President Barack Obama has the biggest partisan gap in his early job approval rating of any president in the last 40 years. A new Pew Research Center poll shows 88 percent of Democrats approve of the president; but only 27 percent of Republicans think he's getting it done. That's a stunning 61 point gap.
Even George W. Bush only had a 51 point partisan gap early in his administration. Of course that was before 9/11 and the phony reasons for invading Iraq. President Clinton had a 45 point gap.
Researchers suggest this growing partisan divide is part of a long-term trend. Looking at early approval ratings for Jimmy Carter and Richard Nixon, a majority of Republicans actually approved of Carter's job performance; and a majority of Democrats backed Nixon at similar points in their first terms.
When it comes to President Obama, the partisan gap is especially curious since this is someone who won the election by forming a coalition of voters from across the spectrum. Then-candidate Obama promised to bring a post-partisan brand of politics to Washington; and since his inauguration, the president has made an effort to reach out to Republicans in Congress - meeting with them privately about the economic stimulus bill, inviting them to a White House Super Bowl party, and including them in various on camera meetings at the White House. But apparently it's not working.
Here's my question to you: What happened to the idea of bipartisanship?
Filed under: Bipartisanship
How to end bitter divide in Washington?
Despite all the lofty talk during the election about change, hope and ushering in a new era in Washington... most people don't think it's happened.
A new Gallup poll shows only 21% of Americans think the tone between Democrats and Republicans in our nation's capital has gotten better.
A new Gallup poll shows only 21% of Americans think the tone and "level of civility" between Democrats and Republicans in our nation's capital has gotten better since President Obama came into office last month. 23% think things have gotten worse. More than half – 51%– say it's stayed the same.
The poll also found that Democrats are more likely to say the tone has improved, not surprising since they have one of their own in the White House, while Republicans are more likely to say it's gotten worse. Independents are about evenly split.
Last week's party-line vote in the House of Representatives on the economic stimulus package was the nation's first look at how Washington might operate during the Obama administration... and the partisanship looked a lot like what we saw under President Bush. This vote came despite the president's efforts at bipartisanship – a including a stop on Capitol Hill to meet with Republican leaders and hosting a bipartisan Super Bowl party at the White House. The New York Times reports that Republicans have been scoring invitations to the White House nearly as often as Democrats have. One Republican Congressman who attended the Super Bowl Party says such a meeting "humanizes and personalizes" your opponent and that it helps people put politics aside.
Here's my question to you: What is your prescription for ending the bitter partisanship in Washington?
Filed under: Bipartisanship • Obama Administration • US Congress
Bipartisanship: Is it already dead?
President Obama had hoped the political capital he won on the campaign trail would pay off in Washington and allow him to push through his emergency stimulus bill without too much hassle. But after less than a week in office he has run headlong into the partisan battles he promised to eliminate in the Nation's Capital.
Eric Holder is sworn in during his confirmation hearing in front of the Senate Judiciary Committee on Capitol Hill on January 15, 2009. Holder's nomination to be the next Attorney General has been a source of contention between the President and many Republicans.
The new President is facing sharp resistance to his $825-billion stimulus package that the House is expected to consider on Wednesday. Questions about how the money will be spent stand in the way. Not that surprising when you consider the mystery of the $750-billion Wall Street bailout President Bush signed off on last year. We still don't know where a lot of that money went.
President Obama is pulling out all the stops to get everyone on the same page. He's meeting with his economic advisers, talking with lawmakers on Capitol Hill, and continues to tell the American people how bad things are and warn them to brace for things to get worse.
And it's not just the stimulus package the President is having problems with. Republicans are holding up the confirmation of his Attorney General, Eric Holder.
And they can't be thrilled that the new President is signing one executive order after another to undo the policies of his Republican predecessor.
These are all indications that this isn't going to be the smooth sailing President Obama had in mind.
Here's my question to you: Is the spirit of bipartisanship already dead in Washington?
Why can't the two parties work together?
House Minority Leader John Boehner sent a clear message yesterday to President-elect Obama that he is far from having the support he and the Democrats need to pass the 825 billion dollar emergency stimulus bill.
Why aren't there any Republicans in this photo?
The sticking point: The plan was crafted by Speaker of the House Nancy Pelosi and her Democratic colleagues without Republican input.
Obama has been pushing for bipartisan support and an end to 'politics as usual' in Washington. The country is in the midst of an economic crisis with no end in sight and the President-elect has warned of dire consequences if nothing is done. But Democrats and Republicans seem unable to put their differences aside and work fore the common good.
And it's a little more than egos and arguing for argument sake. Boehner says the Democrats are operating on "the flawed notion that we can borrow and spend our way back to prosperity."
Some conservative Republicans are uncomfortable with the hundreds of billions of dollars of spending in Obama's plan. Some Democrats don't like the amount of spending as compared to tax cuts in the bill, and there's skepticism whether the business tax cuts will really create the jobs they're supposed to.
Here's my question to you: Why can't the Democrats and Republicans work together instead of against each other?
Tune in to the Situation Room at 4 pm to see if Jack reads your answer on air.
Filed under: Bipartisanship • Congress

redpajama_set_name: RedPajamaCommonCrawl


THIS WEEKEND In its second round, the super villain pic Suicide Squad took a nosedive tumbling 67% but still was strong enough to be the number one movie in North America grossing an estimated $43.8M. That was a bit better than the 69% for Batman v Superman from earlier this year, but larger than what most comic book movies see on the second weekend.
Squad now sits at $222.9M and still hopes to crack $300M by the end of its domestic run. Competition over the coming weeks will not be too harsh. Overseas this weekend, Warner Bros. took in an estimated $58.7M, down 56%, raising the international cume to $242.5M and the global gross to $465.4M. Germany and Japan are still to come.
The animated pic Sausage Party scored the biggest opening weekend of the year for an R-rated comedy grossing an estimated $33.6M for second place. Sony's food pic voiced by Seth Rogen, Kristin Wiig and many others averaged a stellar $10,828 from 3,103 theaters. Good reviews and a unique concept helped lure in adults looking for original raunchy humor. The road ahead looks bright.
Disney opened its latest family adventure Pete's Dragon and was met with a decent $21.5M launch from 3,702 sites for a $5,808 average. The PG-rated entry earned good reviews and hopes to connect with kids on their final weeks of summer vacation throughout the August days ahead. A nice A grade from CinemaScore bodes well for the road ahead.
Universal's Jason Bourne followed with an estimated $13.6M falling 39% and bumped its domestic cume up to $126.8M. Global stands at $246M. The hit comedy Bad Moms held up very well slipping only 18% to an estimated $11.5M for a terrific new cume of $71.5M for STX.
The Secret Life of Pets dropped just 23% to an estimated $8.8M putting Universal at $335.9M to date and a worldwide total of $592.6M. Paramount's Star Trek Beyond grossed an estimated $6.8M, down 32%, and raised its tally to $139.7M so far.
Meryl Streep's new comedy Florence Foster Jenkins debuted to an estimated $6.6M from 1,528 locations averaging a so-so $4,306 per theater. The PG-13 film co-starring Hugh Grant earned good reviews but played mostly to one quadrant - older females.
The Kevin Spacey family comedy Nine Lives dropped 44% to an estimated $3.5M upping its sum to a weak $13.6M for EuropaCorp. The horror flick Lights Out fell 46% to an estimated $3.2M giving the low-budget fright flick $61.1M to date for Warner Bros.
The specialty marketplace saw an impressive debut from the Jeff Bridges-Chris Pine film Hell or High Water which made off with an estimated $592,000 from 32 locations for a solid $18,500 average. Critics praised the film across the board and next weekend will see an expansion. CBS Films is distributing in partnership with Lionsgate.
The top ten films grossed an estimated $152.9M which was up 18% from last year when Straight Outta Compton opened at number one with $60.2M; and up 22% from 2014 when Teenage Mutant Ninja Turtles stayed in the top spot with $28.M.
Compared to projections, Sausage Party opened ahead of my $23M forecast while Pete's Dragon was close to my $19M prediction. Florence Foster Jenkins was also near my $8M projection.
Be sure to check back on Monday for final figures and again on Thursday for a complete summary, including projections, for next weekend when Kubo and the Two Strings, War Dogs, and Ben-Hur open.
1 Suicide Squad $ 43,536,013 $ 133,682,248 -67.4 4,255 2 $ 10,232 $ 222,640,741 Warner Bros.
10 Lights Out 3,215,446 6,006,454 -46.5 1,652 4 1,946 61,130,264 Warner Bros.
15 Anthropoid 1,233,519 452 1 2,729 1,233,516 Bleecker St.
17 Indignation 755,475 420,266 79.8 267 3 2,829 1,505,571 Roadside Attr.
20 Central Intelligence 410,366 371,126 10.6 295 9 1,391 126,660,783 Warner Bros.


text:
Das Mixed der US Open 2019 war ein Tenniswettbewerb in New York City.

Vorjahressieger waren Bethanie Mattek-Sands und Jamie Murray. Sie konnten ihren Titel verteidigen.

Setzliste

Hauptrunde

Halbfinale, Finale

Obere Hälfte

Obere Hälfte 1

Obere Hälfte 2

Untere Hälfte

Untere Hälfte 1

Untere Hälfte 2

Weblinks

Mixed
2019

redpajama_set_name: RedPajamaWikipedia


Extremly Soft: the Men's Sleeveless Plaid Pattern Casual Slim Shirt is Made of 95% Cotton and 5% Spandex. This kind of Fabric is much Comfortable to wear, sustainable and much strong material to wear for long time.
Fashionable Design: in the basis of Classic Men Shirt, this man shirt is designed with some fashion and Unique element: two pocket, sleeveless design plus plaid button down style.
Ocassions: the fashion and casual shirt is easy to match other clothing. you can have it for everyday's casual wear,outdoor activities, parties, or formal events.


You are visiting the placeholder page for Paul Murphy. This page is here because someone used our placeholder utility to look for Paul Murphy. We created this page automatically in hopes Paul Murphy would find it. If you are not Paul Murphy, but are an alumni of Coconut Creek High School, register on this site for free now.


text:
Gnathonemus longibarbis est une espèce de poissons d'eau douce de la famille des Mormyridae qui se rencontre dans la région des lacs Victoria et Tanganyika. Cette espèce s'est raréfiée depuis l'introduction de la perche du Nil.

Systématique
L'espèce Gnathonemus longibarbis a été initialement décrite en 1888 par le zoologiste et paléontologue allemand  (1839-1904) sous le protonyme de Mormyrus longibarbis.

Répartition
Gnathonemus longibarbis se rencontre au Kenya et en Tanzanie dans le bassin des Victoria et Tanganyika incluant le Nil blanc, le lac Kyoga, la partie moyenne de l'Akagera et la rivière Malagarazi.

Description
Gnathonemus longibarbis peut mesurer jusqu'à .

Publication originale

Notes et références

Liens externes

Osteoglossiformes
Mormyridae


Ethos was a network of house churches all across the Chicagoland area where people gathered in homes to Celebrate God, Explore the Bible, and Influence the World.
At Ethos we extend a special welcome to those who are single, married, divorced, gay, filthy rich, dirt poor, yo no habla Ingles. We extend a special welcome to those who are crying new-borns, skinny as a rail or could afford to lose a few pounds.
Want More Information on Ethos?


AIM: Apart from providing a memorable trip the main aim behind this program is to show people living in cities about the other side of life.
Location: A Small Village in Uttarakhand, Near Famous Hill Station Lansdowne.
Dates: Entire May & June.
Minimum Group Size Required: 20 Adults.
Activities Covered: Rock Climbing, Repelling, River Crossing, Flying Fox, Hiking, Team Building Games, Bird Watching, Stargazing, Daily Yoga Session, Cricket, Volley Ball, Badminton, Archery, Dart, Paint Ball, Zorbing, Lesson on Kayaking, Fishing & Local Farming.
Meals Included: Evening Hi-Tea & Dinner.
By Road, Approx 06 Hour Journey to Base Camp.
Team Building Games & Bonfire at Evening.
Over Night at Base Camp.
Meals Included: Breakfast, Lunch, Evening Hi-Tea, Dinner.
After Breakfast, We will trek to Camp - 1, It will take around 2 Hour to reach Camp - 1 from Base Camp.
Free afternoon for self and lesson on pitching the tent, camping rules etc.
Group discussion, antakshari etc in the evening followed by dinner. Stay at the tent.
Meals Included: Breakfast, Lunch, Dinner, Evening Hi-Tea.
Wake up early morning and then hiking to nearby villages & river (3-4 hrs). Back to Camp for Lunch.
During afternoon, football /cricket match with the local kids.
Evening lesson on YOGA and tribal dance, other cultural activities.
After Breakfast, Trek to Base Camp & By Road to Delhi.
Wake up early morning and then hiking to nearby villages (3-4 hrs). Back to Camp for Lunch.
We will do various Adventure Activities Today.
Bonfire and Musical Program in Evening.
After Breakfast, We will Visit Near by River & Will Learn Angling from A Local Expert.
Later after lunch, Local Expert will teach us on how to survive if lost in jungle. (Man Vs Wild 😉 This will cover some tips on ancient ways of hunting & keeping yourself safe if you are lost in Jungle.
After Breakfast Return 06 Hour Drive to Delhi.


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text:
S/SGT John L. GAUNCE
UNIT: 350th BOMB Sqdn POSITION: WG
SERIAL #: 37493614 STATUS: POW
Comments1: 29 JUL 44 MERSEBURG
MEMO 1:
2ND LT GERALD H. STEUSSY                    P POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM                  TAPS: 1987
F/O FRANK C. PETRDIL                            CP POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
2ND LT HOWARD J. "Bill" LEECH                     NAV POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
2ND LT ALLEN J.D. "Mac" MacALLISTER   BOM POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
S/SGT ANTHONY NOCCHIERO                 ROG POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
S/SGT CARLOS E. McCUTCHEON              TTE CPT   6 OCT 44 BERLIN (SPANDAU), AC PARTS
SGT JULIUS GREENWALD                        BTG POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
SGT JOHN L. GAUNCE                            RWG POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
SGT EDDIE D. DUMAS                            LWG NOC  (taken off crew to reduce to 9 men)                              TAPS: 13 OCT 1980
SGT JODA D. TICER                                 TG POW 29 JUL 44 MERSEBURG, OIL REF & HILDESHEIM
350TH SQDN.. CREW, AS ABOVE, JOINED THE 100TH ON 25 MAY 1944..  See S.O.C. page 82/83
ON 29 JUL 44 S/SGT EDWARD LOWTHER, FROM THE J.M. SHELLY CREW, WAS FLYING AS TTE AND BECAME A POW.
THIS WAS THE CREW'S 18/19TH MISSION…pw
MISSIONS OF LT STEUSSY CREW
Date          Aircraft Nbr & Name                   Target
6/2/1944   102657 BOSS LADY                   BOULOGNE
6/5/1944   102695 LN-F NO NAME               BOULOGNE(CHG)
6/6/1944   97621  LN-A NO NAME               OUISTREHAM
6/6/1944   97621  LN-A NO NAME               FALAISE
6/7/1944   31220  FLETCHERS CASTORIA II  NANTES (BRIDGES)
6/8/1944   31220  FLETCHERS CASTORIA II  TOURS (BRIDGES)
6/20/1944 31220  FLETCHERS CASTORIA II  FALLERSLEBEN
6/21/1944 32009- BLACK CAT 13                RUHLAND (START OF 1st RUSSION SHUTTLE MISSON
6/26/1944 32009  BLACK CAT 13                DROHOBYCZ
7/3/1944   32009  BLACK CAT 13                ARAD (RUMANIA)
7/5/1944   32009  BLACK CAT 13                BEZIER (FROM ITLAY)
7/11/1944 32009  BLACK CAT 13                MUNICH (AERO ENGINES)
7/12/1944 102598  LN-Z NO NAME              MUNICH (IND. AREA)
7/13/1944 32009  BLACK CAT 13                MUNICH (JET ENGINES)
7/17/1944 37815  YOU CAN'T LOSE            AUXERRE & MONTGOURNOY
7/18/1944 32009  BLACK CAT 13                KIEL & HEMMINGSTADT
7/28/1944 97829  REGAL EAGLE                 MERSEBURG (Sgt Dumas comes off crew to reduce to 9 men)
7/29/1944 97829  REGAL EAGLE                 MERSEBURG
EYEWITNESS:  "A/C #829 was hit by flak over the target. Bombs were dropped; then the aircraft fell back
amoung the stragglers and was not seen again."
Statement by Lt. Petrdil indicates that all nine members of the crew abandoned the ship about 30 miles west of Merseburg. The only apparent injury was a fractured foot suffered by Lt. MacAllister hitting the ground. They were leading the high squadron on this day. Crew, with the exception of T/Sgt Edward D. Lowther from the J.M. Shelly crew, had joined the 100th on 25 May 1944. (They found the 100th despondent over the loss of 15 crews at Berlin the day before ,24 May 44) Lowther was flying in place of the crew's regular TTE, T/Sgt Carlos E. McCutcheon who went on to complete his tour
Letter to Colonel Bill E. Thompson from Howard J. Leech dated 27 Oct 1995…pw
297 Shoreline Drive
New Bern, N.C. 28562
I'm sorry I've been so long in answering your letter. I have just  gotten back prints from my pictures which I thought you might be interested in
seeing. Each picture is identified with a number on the back, so if you need enlargements, let me know the photo number and the size needed.
You are correct that we were on the first shuttle mission to Russia in  June, 1944, and some of the pictures are from this mission. Also, we were shot  down over Germany on the July 29, 1944 bombing mission to Merseberg. I will give you the account from my "kriegie's diary8 and my memory of other details. We were hit by flak two minutes before the target in the number four engine.  Initially the propeller couldn't be feathered, but later that was accomplished. We left the formation making a turn to the right and losing altitude, and dropped our bombs at 1010. Leaving Merseberg we flew to the rally point and took the planned course for return to England, hoping to rejoin the other planes as they descended on the way home. We never saw any U.S. fighter planes which we hoped could escort us on the return to England. Before long we saw parachutes below us and realized that a plane ahead of us had probably been picked off by German fighters. Sure enough, it wasn't long before a Folke-Wulf 190 found us.  He came in from about 6 or 7 o'clock low and fired two 20 mm shells at close range. My radio was knocked out at this point, so I give you the damage report from what others told me later. I was told that one shell went through the waist and the second hit in the left wing starting a fire between No. 1 and No. 2 engines. I know the F-W 190 flew past us quite close, and we were all firing at him. I can't see how we missed him, but he flew on away as if he hadn't been hit. The pilot dived our plane in an attempt to put out the fire, but the attempt did not succeed. We were deep in Germany with little hope of getting back to England, and risking an explosion of the wing gas tank at any time, so the pilot gave the order to bail out about 1025."
"I pulled the rip-cord, felt a jerk, and then saw the white chute above me. It was just like being suspended in mid-air; I couldn't see or feel any movement whatsoever. I also recall the deep quiet after the roar of the engines while we were in the plane. I looked around and could see one other chute than my own, and perhaps a mile away our plane was making a slow bank to the left, losing altitude, and smoking profusely". I was fortunate to come down near a small creek or irrigation ditch and slipped my chute so I landed in the creek. As I climbed out of the water, local people were running across the field, and at about the same time an English-speaking German doctor arrived and took charge. He told me of extensive damage in Hamburg and Munich, and mentioned having relatives in Milwaukee or Minneapolis. He took me to a village about one half; mile away where some local authorities took all my possessions, including my watch and-the escape kit (which was apparently never turned in, for I was questioned about it several times later). Soon a Wehrmacht soldier arrived, and we retraced our steps to the place where I had landed. When the doctor left, the soldier clapped my boots, and Mae West over my shoulder and motioned to pick up the parachute which he had been carrying, and shouted l'Raus, Raus!!" I double-timed to the next town about 1 k; miles away, letting the chute slide out from time to time to get a chance to stop and get my breath. When I did, I was kicked in the butt or clapped over the head. Before long we arrived at Weisensee, a slightly larger town, where I was put in a cell in the local jail. It was poorly built, and I had visions about trying to break out that night (which I realized later would have been futile). That evening, I was taken out and met our pilot, Gerry Steussy, and we were driven to a Luft Waffe base in Erfurt, where we were kept for several days. Then we were taken by train with other prisoners to Frankfurt where we were in the interrogation center (they knew much more about the 100th bomb group than I did!!). We then were sent to Wetzlar to the transit center (Dulag Luft). Here, I found that all our crew had managed to get out of the plane, and were safe. The bombardier, "Mac" MacAllister, broke his ankle on landing and was taken to the hospital. At Dulag Luft, the enlisten men were separated from the officers and sent to another prisoner-of-war camp. Gerry Steussy, Pete@ Petrdil, and I were sent to Stalag Luft III at Sagan. By that time, the American compound must have been getting pretty full, and I believe we were the first or one of the first to be put in the North compound with the British. We were given a room for all Americans in Block 121.
I will not detail life Stalag Luft III, as you are undoubtedly familiar with that. In late January, we made that terrible march out of Sagan for two days in blizzard conditions to a French POW camp near Sorau. After a day or so, we marched on to Spremberg, and I believe it was at this time that we rejoined the American prisoners from other compounds of Stalag Luft III. Then it was over-crowded 40 & 8 boxcars for several days journey to Nurnberg. I recall food shortage and the Green Deathll soup provided by the Germans at Nurnberg, and crowded barracks without even straw mattresses for some time. Etc., etc. We left Nurnberg on April 4, and marched over the ensuing days about 150 kilometers to Moosberg, where we were liberated on April 29, 1945. After a few days we were flown by C-47 out of Landshut to Le Havre and put up at Camp Lucky Strike until we were assigned a ship to take us back to America.
I have rambled on here, as I remember those days. I'm sorry to say that Gerry Steussy died several years ago. I am still in contact with MacAllister, and know the whereabouts of Petrdil and Greenwald, but have not been able to locate any others of the crew. I had hoped to be able to find them and send them some pictures of our war years together.
Howard J. "Bill" Leech
KIA / MIA / EVA / INT INFORMATION:
TARGET: Merseburg DATE: 1944-07-29
AIRCRAFT: "Regal Eagle" (42-97829) CAUSE: EAC
PLOT: ROW:
GRAVE: CEMETERY:
Part of the Gerald H. Steussy crew at the chin turret, Thrope Abbotts, England, late May 1944. (l to r) "Pete" Petrdil (CP), "Mac" MacAllister (BOM), John Gaunce (RWG), Eddie Dumas (LWG), Julius Greenwald (BTG), Carlos McCutcheon (TTE), Joda Ticer (TG). (100th Photo Archives)
SERVED IN:
STEUSSY, Gerald H. - P
PETRDIL, Frank C. - CP
LEECH, Howard J. - NAV
MACALLISTER, Allen J. - BOM
MCCUTCHEON, Carlos E. - TTE
NOCCHIERO, Anthony - ROG
GREENWALD, Julius - BTG
DUMAS, Eddie D. - WG
GAUNCE, John L. - WG
TICER, Joda D. - TG


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Category: celebrations
Cookie tiiiiime!
Mine never look this beautiful. Image from hdwallpapers.com
This is the only cookie recipe I've ever committed to memory. These are pretty much the best rolled cookies there are. I used to call them "Sailboat Cookies" because for some reason, I was in possession of only one cookie cutter, and it was shaped like a sailboat.
1-1/2 cups pure unsalted butter at room temp
1-1/2 cups confectioners sugar
(You can add optional flavorings like lavender, almond oil, lemon extract, etc.) Cream the butter together with the sugar until light and fluffy. Add egg and vanilla, then salt and flour. Roll and cut. Don't make these too thin, because they're very tender and will break (see below). Make them nice and thick. Lay on ungreased parchment lined baking sheets and bake at 325F for about 10 minutes, just until they start turning brown at the edges. Frost with your favorite icing or make a glaze of confectioners sugar mixed with an egg white. Sprinkle on colored sugar.
January 21, 2011 | 1 Comment
Elizabeth last year at her bridal shower. Good lord, we had such fun that day! And we're telling all here.
So the official wedding photos are done and they're unbelievable. But I also love the snapshots from the wedding guests. This one is just so, so sweet.
I love the candid emotion. I love the clutching and the way my mother's pearls look. I love the music ("Morning has Broken" was playing).
If you look closely you can see a bandaged cut on Jay's hand. He is good at improvising. Here is his redneck bandaid:
Is there anything duct tape can't do?
It's a good thing Jay only has to do this once because it was rough on him.
July 27, 2009 | 11 Comments
…of the weekend o' love. I'm still floating. More later. Click each photo to enlarge.
cell phone pic by father of the bride, just before he walked her down the aisle
photo by Pete Saloutos www.petesaloutos.com
the bride and her maid of honor
I am so ready for the WEDDING to be here. In the meantime, here's something to share. It's Elizabeth and her cousin Joelle, circa 1989. It's almost as if they knew what the future would hold:
My parents have been married for 55 years.
May 29, 2009 | 14 Comments
How the heck did they do it?
still smiling 55 years later
100-year-old school
So the counselor at Ivers J. Norton Elementary School wrote to me about the school's 100th anniversary celebration. Today, they're honoring former staff members at the school in a small town in Western New York. I was asked to share some of my memories of the school, which I attended in the late '60s. Here are a few:
We lived at 502 West Henley, kitty corner from the school. Some of my teachers were Mrs. Ellen Blessing, Mrs. Geuder and Mr. Schwabenbauer. Mrs. Mazza was the gym teacher.
The library was amazing to me, and one year, I read one biography from every letter of the alphabet. I also devoured the "Betsy-Tacy" books by Maude Hart Lovelace, Beverly Cleary books and pretty much everything else I could get my hands on. Mrs. Geuder (5th grade) was a great reader and read aloud to us every day–Caddie Woodlawn, Harriet the Spy, Tom's Midnight Garden, Big Tree are some I still remember. Later, when I became a 5th grade teacher, I read to my students every day too.
When I was in Mr. Schwabenbauer's class, I wrote my first piece of long fiction. The assignment was to write a story about a natural disaster. I remember considering a glacier but he suggested I go with something like a flood or forest fire. I filled an entire theme book with my story. I'm sure it was awful but he gave me an A.
When I was in third grade, I climbed over a chain-link fence in the back schoolyard, ripped open my arm and had to get stitches.
We moved away from Olean in the 1970s and enrolled in schools overseas. People told our parents we might be "behind" in the competitive private schools in Brussels and Paris, but this was definitely not the case! Olean schools prepared us well.
I'm currently a novelist with more than forty books published, including numerous bestsellers. My series of books known as the Lakeshore Chronicles take place in upstate New York, and feature a fictional town that has a lot of features in common with Olean!
What was your grade school like? How did it shape you into who you are today?
my alma mater
life is good: nyt-bsl-51709
dawn of a very good day
Because I'm the mother, that's why.
As the mother of the bride, I have to make sure she has something blue to wear. How about these shoes? Huh? Huh? What's better than that???
for the bride, something blue
Oh, wait, I know!
The same shoes for the mom!
for the mom, something new
the queen of all knicknacks…
…paid me a visit this morning! Snowfall at Willow Lake is up for a RITA Award.
goddess of knicknacks
The call came from the lovely and talented Lorraine Heath, who is also up for the award for her historical romance.
Winners will be announced this summer at the RWA National Conference.
Wish us luck in the RITA smackdown!
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Kids Golf Foundation Announces Partnership with Wilson
SUGAR GROVE, IL – The Kids Golf Foundation of Illinois is excited to announce that Chicago-based Wilson Sporting Goods will be working with them to help grow the game of golf. Starting this summer, Wilson will be providing more than 500 participants of the Foundation's Level 2: Traditional Clinics with a set of golf clubs, golf balls and golf tees.
"We truly value what the Kids Golf Foundation is all about and are excited to be a part of introducing the next generation to this great game," said Doug Theil, Director of Marketing for Wilson Golf.
Level 2: Traditional Clinics are introductory golf clinics that can be run by anyone with training by the Kids Golf Foundation. It teaches basic swing fundamentals, as well as the rules, history, etiquette, and life lessons of golf. Life lessons include such important topics as honesty, integrity and sportsmanship. Besides Wilson brand golf clubs, balls and tees, the participants also receive a Kids Golf Foundation bag tag, polo shirt and hat.
"I am thrilled that a brand like Wilson, which is known all over the world, is interested in helping [the Kids Golf Foundation] with our mission," said Michala Mika, Director of the Foundation. "We want to instill a lifelong passion for golf in our participants, one that encourages them to grow both personally and even professionally. What better way than by providing them with a top-of-the-line set of clubs so they can continue to play after the clinic has ended?"
Wilson Staff, the golf division of Wilson Sporting Goods, is well known for outfitting many of the world's top professional golfer, such as Sam Snead and Arnold Palmer. Current Wilson Staff players include British Open and USPGA champion Pádraig Harrington, as well as Kevin Streelman. Its line of irons has more majors won than any other brand, with players using Wilson Staff clubs to win a total of 61 majors.
"Wilson has been in the sporting goods business for many years and we are happy that they are partnering with the Kids Golf Foundation," said Mary Timm, a Site Coordinator with the Kids Golf Foundation. "We are so excited to receive equipment from a company that makes such exceptional products!"
Besides providing equipment, Wilson can also open doors to new opportunities for the Foundation.
"The golf clubs are just the beginning," said Mika. "I'm excited for what's in store."
About the Kids Golf Foundation
The Kids Golf Foundation of Illinois is dedicated to bringing the sport of golf into the lives of children and providing them with opportunities for personal growth and career enhancement. The Foundation is a statewide junior golf association that offers and supports several golf programs and events designed to introduce children between the ages of 5 and 17 to the sport of golf, its fundamentals, rules, history, etiquette, life lessons, and more. The Foundation is one of the largest junior golf organizations in the state.
About Rich Harvest Farms
Consistently ranked in Golf Digest's America's 100 Greatest Golf Courses, Rich Harvest Farms is an ultra-private, members-only club located in Sugar Grove, Illinois. Owned and built by Jerry Rich, the course consists of 18 holes and is a 1,820-acre showcase of nature and agriculture. Rich Harvest Farms also hosted the prestigious 2009 LPGA Solheim Cup, 2015 Palmer Cup, the 2015 Western Amateur, and the 2017 NCAA Division I Men's and Women's Golf Championships. For more information visit www.richharvestfarms.com and follow Rich Harvest Farms on Twitter @RHFTournaments.
Thinking Outside the Tee Box
2017 NCAA Golf Championships


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All Inclusive Living – Why Millennials Choose Coliving
Long gone are the days of having to remain in the same town, in the same house, doing the same job.
Today's millennials have quickly realized that change is good for the soul and the bank balance. Nowadays, it's easier than ever to move from job to job – gaining experiences in different countries. It's a far cry from receiving a gold watch as a thank you for 25 years of being on a hamster wheel for the same company. Millennials don't see that as job security – they see it more like a prison sentence. And that's why they are embracing coliving and all the freedom that it brings. But freedom is not the only factor that makes coliving so appealing.
Millennials across the globe are jumping at the chance to travel and work remotely – meeting people from all corners of the world – and benefitting from broadening their minds and their horizons. And one thing's for sure – this is a lifestyle that's here to stay.
Let's look at the reasons why.
Cost and Ease
Buying a house in today's market seems an impossibility for most millennials. It's simply too expensive. We earn less than our parents did and property prices are soaring.
Renting is the only option for the majority – and sharing the cost of a larger property is a win-win for both property owners and those wishing to rent. Renting on your own would probably have you seeking a box room or studio flat where you can touch both walls with your outstretched arms.
Sharing with others gives you that all-important space – a large living room, a good-sized kitchen, perhaps even a garden or a balcony.
When you rent a room in a coliving space, the cost of the electricity is included, as is the TV, repairs, maintenance and regular cleaning.
No more wasting a morning waiting in for the gas repairman to arrive. Not your responsibility. No hidden extras – no surprise bill for a broken water heater. It's cost-effective and constant. That's a comforting thought for many millennials who are bringing in various sums of money each month and don't want to be hit with an unexpected bill.
Those renting usually have a much higher sense of respect for the property and furnishings when it's shared with others – and established house rules ensure that the communal areas are clean and welcoming for everyone. Most spaces will ask for a deposit in case of those rare unavoidable accidents.
Coliving allows you the freedom to focus on you, your social life and your project – the house is not your issue to attend to, it's simply there for your convenience, security and enjoyment.
Let's break down the word 'coliving' – Community Living. It's right there in black and white. Live together as a community. Move in, introduce yourself to others just like you and be welcomed into the community – instantly.
It's an accepted fact that social media is far from social – indeed, it's downright lonely. It's made people stare down at their phone, lose themselves in their laptop screens – disengaging more and more from human interaction. It's a sad fact that around 40% of millennials are chronically lonely.
And that's where coliving has been heralded as a saviour and a solution. Living with like-minded people in a community setting allows people the choice of privacy in their rooms, or socialising in the communal spaces. The best coliving spaces have a Community Manager who sets up a variety of activities each week – from mastermind sessions to "family dinners", excursions, movie nights and brainstorming on a Monday morning to set the goals for the week.
Some coliving spaces have a minimum stay to enhance the community feel as much as possible. Their aims are to allow people to interconnect fully – to make partnerships, friendships and connections.
In an increasingly virtual world, coliving promotes face-to-face interactions at pre-arranged weekly events or a simple bowl of cereal in the morning. Instead of checking into a hotel and only saying good morning to the reception staff and perhaps the housekeeping team, here is an opportunity to be surrounded by like-minded people – all seeking the same thing.
It's safe, it's welcoming and it's a supportive community – as soon as you walk through the front door. I wish my first day at school had been that easy. And speaking of support, how wonderful to have a melting pot of skills and brains all under one roof. The ideas, opinions and problem solving that can occur during a brainstorming session – well, the possibilities are endless.
What was once a massive stumbling block in your head becomes a tiny issue when looked at through the eyes of your fellow coliving residents. Feeding off their energy can also inspire you to become more focused, more productive and more likely to finish your project faster.
The chances of success and revenue generation increase in the company of like-minded individuals who are all seeking similar goals.
Living in a coliving space brings a high level of security – from the screening of both staff and guests to the 24-hour security and CCTV cameras that are usually installed. Plus you have people in the house practically 24 hours a day – so prying eyes will see that it's not a property to target.
And personal safety too – if you ever feel unsafe walking around late at night, you will have fellow residents who can accompany you on a night out or at the end of a phone should you need assistance
Quality and Variety
Consider living and working on a vineyard, or on a farm in Portugal, or maybe in a Victorian-style mansion block in London. Perhaps you fancy living in loft conversion in San Francisco or in the Italian mountains.
The variety is staggering and the quality of accommodation available is truly impressive. Simply choose your ideal location and see which types of coliving spaces are on offer there.
Millennials in a coliving space bring a cacophony of skills – with the majority using their laptop for their work. But others are photographers, or writers using their trustworthy notepad and pen. Others conduct online teaching that requires just a smartphone. There are no set rules for who can join a coliving space – designers, programmers, bloggers, entrepreneurs, reviewers, the list is endless. And the beauty of a coliving community is the willingness to share, support, mentor and even partner with fellow residents. The mutual respect is evident as soon as you join your first mastermind or brainstorming session. Stuck on a design issue? Just ask your fellow housemates. Need someone to critique your website landing page? Simply ask.
As soon as you enter a coliving space, you can feel the connection – it's a non-judgemental community that thrives on the energy of those in it. The sense of acceptance, regardless of race, religion, sexual orientation and bank balance, is intoxicating. It's like nothing else – to be welcomed and accepted without hesitation.
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Find the Coliving home that best suits you with Coliving.com, the #1 coliving booking platform.
Coliving is an innovative way to live and work with like-minded people. It's been growing exponentially in popularity for the past few years with San Francisco leading the way.
The San Francisco Bay Area is an epicenter for startups. As 13.5% of all global startup deals take place in the Bay Area, it's no wonder that new startups are attracted to this lucrative city.
Coliving is a modern residential model wherein most of the facilities are shared. Besides your room and personal essentials, there could be any number of shared fully-furnished spaces for residents, including but not limited to lounges, coworking spaces, bars, gyms, and other features that are not only convenient but also
It's hard enough finding accommodation on your own, let alone with your beloved pet. Landlords have to consider how pet-friendly rooms for rent may affect the cleanliness, safety and overall noise levels on their property. That said, millions of people around the world and especially in the US live with
Moving to San Francisco? Here's how coliving can help
San Francisco is often ranked as one of the best cities in the world to move to because of its reported high quality of life. The economy is superpowered by the many technology companies and start-ups based there. And the unique neighborhoods and cultures within the city, combined with the
Book a hotel room or join a coliving space?
At first glance, hotel coworking rooms and coliving spaces with coworking areas may seem similar. Both operations cater to travelers who require a space to productively work throughout their stay. They also offer a variety of amenities beyond the room you rent.
What's the difference between Coliving, PG and Hostels?
Paying guest accommodation (PG), hostel accommodation, and coliving spaces are the most cost-friendly choices for those looking to stay longer than a few nights. But, the three exist for different purposes and thus have distinct operations and setups from one another.
Sleep, work and swim in the Cospace paradise of Koh Phangan
It has all started in 2017 with two business-minded individuals celebrating their love while on their honeymoon in Thailand. The very next year, they were already investing in Casa Tropicana which back then was a restaurant and hostel located in Koh Phangan.
5 top startup founders that colived before it became a movement
Silicon Valley coliving is revered. People flock to the Bay Area from all over the world to get a taste of what living and working with like-minded entrepreneurs in a technological epicenter feels like.
The History of the Coliving Movement
Today's modern coliving movement is the latest iteration of a recurring human trend. The act of communally sharing space and resources while benefiting from a supportive community is something we've seen time and time again throughout history.
How Can You Be Productive in Coliving Spaces?
Many coliving units are built with designated coworking spaces inside. They are designed specifically for remote workers, digital nomads, entrepreneurs and startup founders who yearn to surround themselves with passionate workers who inspire and motivate output.
What Is The Difference Between Coliving And Airbnb
Coliving.com is similar to Airbnb's online marketplace in that they both offer a convenient platform for interested parties to scroll through verified available options.
Coliving Etiquette: Coliving Guide For a Happy Community
Coliving communities are made up of people from many different backgrounds, cultures, and life experiences. Further, the coliving model gives way to people moving in and out more frequently than in the traditional roommate scenario.
Coliving, The New Way of Living With Roommates?
Finding a new roommate is not an easy task. In a traditional lease, it's up to the housemates to fill rooms for rent without any help from the landlord. And if they can't find a replacement, they're stuck footing the bill themselves.
The People You Will Meet in Coliving Will Change Your Life
there's something about these adventures that elicits near-instant bonding. When you live with the same people that you engage in activities with, you have more time to share moments, ordeals, triumphs and struggles together.
The Top 10 Best Cities for Coliving Across the Globe
As society becomes increasingly digital, business, work, and travel opportunities are expanding on a global scale. At the same time, housing prices in major cities worldwide are spiking; making it less convenient for people to live alone.
Coliving For Startups
When most people picture coliving for startups, they imagine a hacker house akin to a scene from Silicon Valley. And they're not entirely off base. In 2004, Mark Zuckerberg rented a house in Palo Alto with some early Facebook employees, and their success kickstarted a movement.
Coliving For Startups In San Francisco
San Francisco is a hotbed for startups. For entrepreneurs, there's really no place like Silicon Valley. It's the capital of innovation, incubators, and inspiration. And when it comes to coliving for startups in San Francisco, the options are endless.
Why Coliving For Couples Is on the Rise
Coliving spaces are perfect for couples looking for flexible accommodation, serviced units, and a community to call their own. Perhaps contrary to popular belief, entering into a relationship doesn't mean you won't ever feel lonely. It's human nature to crave a nurturing social circle, comprised of friends of your own
The One-stop-shop For Startups In Hong Kong
The goal as a startup founder is to keep costs down, network with the right crowd and create a productive environment for your team. But that's not always easy for startups to achieve, especially in cities like Hong Kong, where the rent prices are skyrocketing. The answer lies in coliving;
Coliving in Silicon Valley – An Affordable Way To Rent
Being based in Silicon Valley is the ultimate dream for many entrepreneurs, interns, digital nomads, and remote workers. But there is one huge, intimidating and incredibly off-putting problem – renting a place on your own here is simply far too expensive for most people to afford.
It's your time to shine.
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