We usually think of Blue Cross Blue Shield as insurance, but the Blue Cross Blue Shield of South Carolina Foundation deals with other health-related matters.
Foundation Executive Director Erika Kirby was in Laurens yesterday updating the Laurens Rotary Club with information on the work the foundation is involved with across South Carolina.
She said that key areas the foundation is involved with include free medical clinics around the state, such as the Good Sheppard Free Medical Clinic here in Laurens County. Kirby said Good Sheppard sees some 1,800 patients a year and is one of 45 clinics across the state that address health needs of some 41,000 residents, providing free health care with an estimated value of about $500 million a year.
Erika Kirby said the foundation also assists Federally Qualified Health Care centers and is also working to improve dental health for South Carolina residents.
She also spoke of the foundation's concern with the rise of suicide across the country in recent years and said South Carolina has had one of the more significant increases in suicide.
Ms. Kirby said the Blue Cross Blue Shield Foundation also works with some 30 Eat Smart, Move More programs across the state. One of those is operating here in Laurens County.
She also told about grants the foundation is offering for schools, assisting them as they innovate programs to encourage students to choose healthier foods to eat and to get more physical activity, needed for good health. Here in Laurens County, Ms. Kirby said that School District 56 has won a $25,000 grant to help fund programs to encourage healthier eating and more physical activity by students in all five District 56 Schools.


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R. Kelly Silenced Aaliyah and Her Family With Non-Disclosure Agreement After Marriage Annulment, Docuseries Reveals
R. Kelly silenced Aaliyah and her family through a non-disclosure agreement, following his marriage and subsequent annulment to the then 15-year-old singer.
The new allegations were made in the final installment of Lifetime's "Surviving R. Kelly," which aired on Jan. 2 and Jan. 3. The docuseries centered around R. Kelly's 2022 federal trial where the NDA was brought up in the courtroom as evidence. The late Aaliyah was Jane Doe #1 in the trial.
"Surviving R. Kelly" utilizes Aaliyah's story to spotlight her as a victim of R. Kelly, after years of the media and music industry scandalizing her marriage to the now-convicted singer in the 90's.
Aaliyah's debut album in 1994 was titled "Age Ain't Nothing but a Number" and was recorded when she was 14-years-old. R. Kelly — who was Aaliyah's mentor and was first introduced to her by her uncle, music executive and manager Barry Hankerson — was a lead songwriter and producer of the album. At the time the album was released, rumors circulated that there was a relationship between the 15-year-old Aaliyah and the 27-year-old R. Kelly.
The pair secretly married in August 1994. Aaliyah was 15 at the time, but the marriage certificate falsified her age as 18. The marriage was annulled by Aaliyah's parents in Feb. 1995.
In "Surviving R. Kelly," on-camera interviews with individuals from R. Kelly's camp who were in the room when the duo wed express their regret over the marriage. Individuals who were close to both R. Kelly and Aaliyah share new details about the legal agreement that was allegedly forged between R. Kelly and Aaliyah's family.
READ ORIGINAL STORY HERE

redpajama_set_name: RedPajamaCommonCrawl


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2020 Audi R8 Spyder for Sale in Jacksonville, FL, Close to Mandarin & Orange Park
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Perhaps the weirdest thing about this whole situation is that it didn't happen sooner, or that Telluride resort didn't buy those properties years ago — that lack of vision is astounding.
Map above from TellurideWatch.com shows the band of private property that many skiers have to make a nearly mandatory crossing of to backcountry ski in the area.
Good article here as well.
I'll start, by moving and editing my comment about this I'd placed on another post.
Brian, I hear you about the land issues out your way. But the resort running guided tours isn't exactly less capitalistic than a land owner exerting his property rights. As for unguided folks crossing the private land, hey, if it's not posted my understanding is they have a perfect right to. Also, I know it's a tired issue but land ownership does involve liability for folks that get hurt on the owned land, and sometimes land owners would rather just post their land and keep people out, rather than dealing with buying more insurance, and paying lawyers just to get advice on how to deal with such a thing. What I'm saying is the issue has at least two sides, perhaps even three since the resort wanted to run a commercial operation over someone's private land.
But before I get pigeon holed as a Chapman lover, let me say one of my pet peeves in Colorado is how private land is tending more and more to block access to public land, and the USFS seems to do little about it when they could actually scrap and fight for historical easements, and the gov even holds the trump card as they have condemnation rights!
Also, if the USFS actually closed gates normally used by the public to access public land, just to help a couple of private land owners prevent trespassing, that is totally bogus. The USFS has a job. Their job is to manage public land. Their job isn't to fool around with creating buffer zones to help private land owners! If the USFS is doing what it says in the article I read, that is just sickening.
I guess all I'm saying is this whole deal is nuanced, but I do agree it seems to be going down in a pretty strange way a the moment.
thanks for calling Chapman out so well. Said it better than i could have.
Dave, if that happened it does sound weird on the surface. But the USFS has plenty of "right hand doesn't know what the left is doing" type of stuff going on all the time. The part that seems weird to me is that they'd close those gates. Heck, Colorado is riddled with private property that people hike over, hunt over, ride horses over, etc. and the USFS doesn't do anything to prevent that. Then a few property owners whine, and they block access to one of the most popular backcountry skiing areas near Telluride? That does seem mighty strange.
Anyway hidden in the main article was this….
The USFS states "Skiers can (STILL) reach national forest lands from the (TELLURIDE) ski area by using other access points".
Is it time for a map?
Matt, we're talking about specific gates that reach an important area for backcountry skiing, that's my understanding anyway. I edited a bit to make it clear there are still other gates to the backcountry.
Yes, probably time for a map. Anyone from Telluride know of one we can grab?
Chapman sounds like a sleeze, but……No tresspassing on private property means just that and as a mountain land owner it dosen't seem like too much to ask.
Going to be some pissed off people… I wonder if the ski patrol will actually enforce this? Perhaps they'll have to to maintain relations with the USFS.
Nick, as an expert thanks for chiming in. Do you know of a map of some sort we could publish?
It's unfortunate that a bright person couldn't generate great personal weath by doing something that makes people happy as opposed to the opposite.
By the way, the cost to insure liability on vacant land is either $0 if owned personally (covered automatically under your homeowners insurance) or costs very little if owned otherwise.
Dongshow, exactly, that's what I can't figure out and neither the newspaper reporters nor the USFS information adds any clarity. Anyone have any idea why the resort or the USFS would do this? It sounds really strange to me, as there are chunks of private property all over Colorado that are exactly the same (in that people ski or hike over them after leaving a resort.) Perhaps Chapman has bought up all such property and this is just the beginning (grin)?
I don't understand how either Telluride or the USFS are obligated to do something about people trespassing on private property. Shouldn't the duty and cost fall to this Chapman character. I'd encourage him to try building a fence.
There is a good, detalied map on the TGR forum post by OphirPow. It shows a narrow strip of private land across the middle of Bear Creek. May be some one more tech savvy than I could post it here too.
Perhaps the TGR posters got permission to use it (though I doubt it), so I'll drop Telluride Watch a message and ask.
Thanks Gonzo, I emailed TellurideWatch.com and they gave us permission to publish their map, with credit of course. Sorry I mis-wrote about trespass laws. Did you pay your $30 yet (grin)?
So, lower Bear Creek is still open via the Contention gate (but that barely counts as backcountry since they added the gate- it now gets bumped out), and you now have 3 gates into Alta Lakes. Bummer…..
By all reports, really sounds like a step backwards.
guess i've (unknowing) tresspassed yet again!
Yup Chapman is at it again, and the FS is just too slack to do much for us BC skiiers- they mostly just ski inbounds with free passes from the ski area anyway. This plays nicely into the ski corp + FS hands- close it to get public pressure, then get some public lands group to buy it for the FS, then let the ski corp manage the public lands via gates and "guiding"- $$ ch-ching for the resort, no effort needed for the FS.
I wonder just what the FS is going to do with the summer trail that crosses through the southern part of the pvt land (isn't it part of the hard rock 100 run?)? Maybe they will fight for a legal "proscriptive" access for it, but doesn't that also grant an over snow easement too? Maybe it will just be "closed" as now is skiing, untill it gets bought for the FS.
about a $30 fine as a petty (sub-misdemeaner) offense (but a bit nastier if hunting and DOW are involved).
A few steps backwards considering Telluride has been pushing its image as an 'extreme' destination in recent years. When they realized how popular Bear Creek was becoming they started opening up more exciting inbounds terrain- Black Iron Bowl, Palmyra Peak, and the Gold Hill Chutes. I think their marketing uses it to appeal to people who don't even necessarily ski that type of terrain but like the idea of it and want to ski somewhere cool and exciting. Hence Revelation Bowl, a yawn of a ski except for the fact that it is in Bear Creek and is swimming in views of very exciting terrain.
Come to Canada – Much Much Snow, Friendly People, Space, where on a trip you don't see a plane overhead for . . . a month or two (only experience I have is a canoe trip but I embellish) . . .
I shake my head and hope we don't go this way . . .
Nick, well, with the marketing of "extreme" in mind, I'm thinking there is no way the resort is going to just walk away from providing access to that area. I'll bet something will develop. Also, there must be a huge citizen culture of Bear Creek skiers by now, perhaps they'll step up?
Ya there are some core groups who go out the gate every day of the season, I'm sure they'll just poach it (like lower bear creek was done for years before the gate was added). Shouldn't be too difficult if the gold hill chutes are open. But yeah, hopefully there is some outcry. Local public opinion is pretty divided about bear creek- there are those who don't want the ski area involved at all (and are likely pissed that the ski area may have ignited the closures), and those who want some form of ski area involvement, ranging from avy control to chairlifts. I'm sure they can all unite against Chapman and the USFS's asinine behavior though.
Hey everybody, getting back into this discussion a little late. Lou, I agree that my railing against capitalism was a little knee jerk. Here in Durango we've been having this same battle over a land swap near Haviland lake involving a golf resort. I certainly feel that the resort is jumping all over the b.c. thing and them getting in the guiding game and might have been the tipping point. There was a pretty good article a few issues back in Powder about Tellurides new "access". Long time b.c. people have a right to be feeling edgy. Everybody wants a piece….
The interesting thing to me is that the vehicle for these land grabs is the General Mining Act of 1872, which was specifically designed to allow the extraction of valuable minerals on public lands. Does anyone familiar with this issue picture Tom Chapman with a pick and shovel? Didn't think so.
The ski corp's hold on the back country skier is the right to pull a season's pass. If one enters other than through Telski controlled property it's a fairly simple issue of trespass or not trespass. However, before the gates were put in, USFS occasionally took the position that BC skiers exiting from Bear Creek MUST have ridden the lifts and ducked the ropes.
True, there is a nasty history of the USFS pepper spraying and arresting skiers in bear creek before the gates were in place. Thanks for reminding me Clint.
If you're upset about this, contact this person.
Anon, how about some links that work?
I thought CO was a huge, wide open place where you could hunt, shoot, ATV, sled and do whatever you wanted, and now I'm hearing that it is actually a bit like Wasangles..??!!
Andrew, mix and match… good point, but what happens is the resorts concentrate use and issues. The vast majority of the state is indeed wide open. Amazingly wide open. But really, so is Utah, and heck, even California, really. In my opinion, you have to go to central Europe or parts of our Northeast to really see population, contrary to many folk's end-of-the-world-as-we-know-it view of things out here in the wild west.
Find people who for 18 years have recreated on the land and sue for ownership under Colorado Revised Statute 38-41-101. Limitation of eighteen years. 18 years of continuous use by the people of Telluride and you can own it.
Jim, why the heck don't people do that more?
Here are the email addresses and phone numbers of the pertinent Forest Service personnel to contact if you wish to comment on their decision.
Lou, you've been a strong voice for access to public lands. Is there any advocacy group that works on access for human powered or BC skiing and issues like this T'ride deal or the Sopris access that was a recent topic? Maybe a letter writing campaign to Senator Udall could start to get some public push back going. One would hope Senator Udall would be a willing advocate for this sort of issue, especially access for human powered skiing. Didn't he run Colorado Outward Bound? I know he was pretty much a dirt bag climber and skier in his youth.
It was enacted in 1872 to discover america's mineral wealth and help settle the west.
It gives patent (title) to land and minerals to any miner who found a discovery of a valuable mineral, locates a claim, does significant (in 1872 $) annual assessment work, makes significant mining improvements, and can show the mineral can be extracted, transported, marketed and sold at a profit. Once title is recieved, it is private land and anyone can do anthing they want (almost) on their now private land.
Mining claims pattented to private land (1800s), mining now done (1982), why not use as a ski resort?
So what we have in Bear canyon is what were once a few isolated federal mining claims, that are now simply private lands (patented through the 1872 mining law), with a jerk landowner.
And i agree with Jim M- why doesn't either town of teluride, san miguel county, teleski, or USFS pursue legal ROW via the 18 yr use state statuate?
Chris, definitely some public apathy regarding this stuff. Here in Colorado a lot of energy went to trying to restrict snowmobilers from non-Wilderness land over the past years, when that energy would have been better spent on issues such as private property blockage of public land. But snowmobilers are easy to see and hate… human nature, I guess.
Private property owners have every right to buy property and try to make money from it, so I can't board that particular bandwagon.
What I don't understand in this particular case is why a property owner would block access, when amicable use arrangements exist all over the state? Every such easement started with private property that had no such access. It's something to consider aiming for.
Sometimes it's liability. In the case of the summit of Mount Bross, the issue is apparently the difficulty of locating the landowners but also that of liability for accidents on mining property. However, I see no good reason why property owners should be held responsible for the mistakes of recreational users. Such bad laws necessarily have a chilling effect on what could otherwise be more open arrangements, and in my opinion should be changed. Then, property owners would have one less reason to deny access.
More than anything, this is a case for private acquisition by a conservation trust. Public lands are subject to the whims of politics, whereas holdings by conservation groups are not.
Wow Lou, I'm not even sure what to do with that statement. Are you saying, for people who support quiet use to quit wasting time on snowmobiles and start working on opening up both public and private land so snowmobiles, atvs, etc. can have more land to roar their way through? How do you see this as furthering their goals? Or would you rather they stop thinking for themselves and take up your goals?
Cory, I knew that would get a word out of you!
While Chapman is an pain, the gates being closed is more of a Tel Ski thing than a private land owner issue. The FS here has said several times that they maintain the gates but Tel Ski has told them when they are opening/closing them. It has been an issue for a while. The guided skiing was one more way for the resort to make money, not nesisarly a bad thing. What was bad was the "snow study" than ran under special use permit to map all the avalanche paths in Bear Creek, with explosives of course. Just for information purposes of course. That is what got Chapman interested in Bear Creek to begin with. The resort has done a online survey asking about a new lift into Delta Bowl, now that guiding is out of the question. So basically this whole thing has been a land grab, aided, willingly or not, by the FS and Chapman. Sorry for the rant, just angry!
1. Right of use statutes exist; in the Summer, Wasatch trail (in this particular instance) has been in public use for at least several decades. I WILL be hiking Upper Bear Creek this Summer.
2. Tom Chapman's interest in the Bear Creek mining claims is what his interest in these things has always been: buy a mostly worthless claim and either get USFS to trade for developable property, or get other parties to buy him out. I think the thing to do is not to panic, use the land around his claims anyway. I don't think I'll have to go to jail, but it would be worth it.
I am flabbergasted here. This is not so much about Chapman, but about private property rights in general. Telluride has not been such a good neighbor in general to a number of people, so distrust is rampant. Simply look at all of the comments on this page alone about how the land should be taken from them. Remember, a number of those claims have been in some families for generations and certainly approaching or exceeding 100 years for on many. To the best of my knowledge nobody approached the land owners and asked to buy their lands so people could ski on them. But now many are demanding that they be taken. Whatever happened to good neighbors? How many of those land owners have ever been contacted, or even thanked that their lands were enjoyed by others over the years? Telluride has to be more of less contentious place if it ever wants to move forward with ease regarding issues such as this. Valley Floor was a perfect example of being forceful and ultimately costing everyone more money and not making any friends in the process.
Seppo, I also found Chapman's take to be eye opening. Two sides to every story and all that. While I see his points, I also have no doubt in my mind that private land ownership has to be balanced with public good, but that's an ongoing process and debate without pat answers and easy solutions. I spoke with Chapman on the phone and can say he comes across as a pretty reasonable guy, not some sort of mean fanatic as he's been portrayed here and there. But he is most certainly very strongly on the private property rights side.
As for Bear Creek, I hope it gets worked out. What a cool place, if it really is blocked to most backcountry skiing use, then that's a shame.
I don't like seeing this happen, but on the other hand as a longtime Colorado backcountry public lands user, I'm well aware of dozens of similar chunks of land that could just as easily block access to cool places. And virtually nothing is being done about it. So Chapman raising awareness could in the long run be very positive. In fact, I've met people who LIKED private land blockage as they viewed it as another way of keeping those pesky humans out of the Wilderness. Likewise, I'm sure there are folks out there who'd just as soon see Bear Creek made into a nature preserve that excluded humans. Perhaps Chapman can work a deal with them, if recreation advocates can't make it happen.
I fear you have not been paying attention to this particular discussion. In the case of the Bear Creek closure at issue here, we are talking about old mining claims that have not been worked for decades, on PUBLIC land, over which the public has hiked, climbed, skied for at least the quarter century I have lived here. Now come individuals whose reason for purchasing these holdings seems to be closing off access so that some entity (USFS, private conservation groups,etc.) will feel it necessary to buy them out.
Take a look at the maps early in this series of comments: note that the property in question sits astride "choke points" in the Bear Creek drainage and represents a tiny fraction of the public land in Upper Bear Creek.
In addition, overtures have been made to these owners. The result? Stonewall.
Folks, leave additional comments on our more recent Bear Creek post, please.


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A tandem photovoltaic device includes at least two photovoltaic cells stacked in an optical and electrical series relationship. At least one of the tandem cells includes a dual function semiconductor layer fabricated from a dual function semiconductor material. This dual function layer is an electronically active constituent of the cell. The dual function layer also is optically active and creates a reflective condition which redirects a portion of the light which has passed through the cell back through the cell's active layers to photo generate additional photocurrent. Use of the dual function material eliminates the need for incorporating separate semiconductor and reflective layers in a photovoltaic device. Further disclosed are exemplary formulations of some dual function materials.
1. A tandem photovoltaic device comprised of a first and a second photovoltaic triad, each triad comprising a body of a substantially intrinsic semiconductor material interposed between a body of p-doped semiconductor material and a body of n-doped semiconductor material, said triads being disposed in a stacked, optical and electrical series relationship such that said first triad is closer to the light-incident side of said photovoltaic device than is said second triad, wherein the body of n-doped semiconductor material of said first triad is a dual function semiconductor material comprised of an n-doped, hydrogenated, silicon-oxygen material; whereby in the operation of said tandem photovoltaic device, said dual function layer operates (i) to create a field in the intrinsic body of the first triad, which field separates photogenerated charge carrier pairs formed in said intrinsic semiconductor material by absorbed photons, and (ii) as a partially reflective layer which redirects a portion of those photons of the incident solar spectrum striking it back to the intrinsic body of the first triad.
2. The photovoltaic device of claim 1, wherein said device is a dual tandem device in which the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material and the intrinsic body of the second triad is comprised of an amorphous silicon:germanium:hydrogen semiconductor material, and wherein said device has a stable, short circuit current of at least 9.50 mA/cm.sup.2.
3. The photovoltaic device of claim 2, wherein said device has a fill factor of at least 0.64.
4. The photovoltaic device of claim 2, wherein said device has an open circuit voltage of at least 1.65V.
5. The photovoltaic device of claim 1, wherein said device is a dual tandem device in which the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material and the intrinsic body of the second triad is comprised of a nanocrystalline silicon:hydrogen semiconductor material, and wherein said device has a stable, short circuit current of at least 12.00 mA/cm.sup.2.
6. The photovoltaic device of claim 5, wherein said device has a fill factor of at least 0.67.
7. The photovoltaic device of claim 5, wherein said device has an open circuit voltage of at least 1.43V.
8. The photovoltaic device of claim 1, wherein said device is a triple tandem device further including a third photovoltaic triad stacked in an optical and electrical relationship with the first and second triad, so that the second triad is interposed between said first and third triad, wherein the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material, the intrinsic body of the second triad is comprised of an amorphous silicon:germanium:hydrogen semiconductor material, the intrinsic body of the third triad is comprised of an amorphous silicon:germanium:hydrogen semiconductor material, and wherein said device has a stable, short circuit current of at least 7.00 mA/cm.sup.2.
9. The photovoltaic device of claim 8, wherein said device has a fill factor of at least 0.67.
10. The photovoltaic device of claim 8, wherein said device has an open circuit voltage of at least 2.25V.
11. The photovoltaic device of claim 1, wherein said device is a triple tandem device further including a third photovoltaic triad stacked in an optical and electrical relationship with the first and second triad, so that the second triad is interposed between said first and third triad, wherein the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material, the intrinsic body of the second triad is comprised of a nanocrystalline silicon:hydrogen semiconductor material, the intrinsic body of the third triad is comprised of nanocrystalline silicon:hydrogen semiconductor material, and wherein said device has a stable, short circuit current of at least 8.80 mA/cm.sup.2.
12. The photovoltaic device of claim 11, wherein said device has a fill factor of at least 0.70.
13. The photovoltaic device of claim 11, wherein said device has an open circuit voltage of at least 1.95V.
14. The photovoltaic device of claim 1, wherein said dual function semiconductor material includes 1-5% of a phosphorus dopant.
15. The photovoltaic device of claim 1, wherein said dual function semiconductor material further includes carbon and/or nitrogen.
16. The photovoltaic device of claim 1, wherein the optical band gap of the substantially intrinsic semiconductor material of said first triad is greater than is the optical band gap of the substantially intrinsic semiconductor material of said second triad.
17. The photovoltaic device of claim 1, wherein the substantially intrinsic layer of at least one of said triads is comprised of a hydrogenated silicon alloy material.
18. The photovoltaic device of claim 1, wherein the substantially intrinsic layer of at least one of said triads is selected from the group comprised of (i) hydrogenated silicon-germanium alloy material, or (ii) nanocrystalline silicon hydrogen alloy material.
19. The photovoltaic device of claim 1, wherein said n-doped, hydrogenated, silicon-oxygen semiconductor alloy comprises, on an atomic basis: 40-60% silicon; 40-60% oxygen; 10-20% hydrogen; and 0.1-1.5% phosphorus.
20. The photovoltaic device of claim 1, including the dual function layer and wherein the thickness of the intrinsic layer of the top cell is no thicker than a similar photovoltaic device without the inclusion of the dual function layer.
21. The photovoltaic device of claim 1 including the dual function layer and wherein the total current photogenerated in the top and bottom cells is greater than the current photogenerated in the absence of that dual function layer.
22. The photovoltaic device of claim 1, further characterized in that the quantum efficiency curve of the device shows an interference fringe which is correlatable with the thickness of the intrinsic body of the top triad.
23. The photovoltaic device of claim 1, wherein: A. when said device is a dual tandem device in which the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material and the intrinsic body of the second triad is comprised of a nanocrystalline hydrogen semiconductor material, said device being characterized in that when the band gap of the intrinsic body of the first triad is greater than 1.8 eV, the maximum thickness of said first triad is less than 300 nm, and when the band gap of the intrinsic body of the first triad is greater than 1.7 eV, the maximum thickness of said first triad is less than 250 nm; B. when said device is a dual tandem device in which the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material and the intrinsic body of the second triad is comprised of an amorphous silicon: germanium:hydrogen semiconductor material, said device being characterized in that when the band gap of the intrinsic body of the first triad is greater than 1.8 eV, the maximum thickness of said first triad is less than 220 nm, and when the band gap of the intrinsic body of the first triad is greater than 1.7 eV, the maximum thickness of said first triad is less than 180 nm; C. when said device is a triple tandem device further including a third photovoltaic triad stacked in an optical and electrical relationship with the first and second triad, so that the second triad is interposed between said first and third triad, wherein the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material, the intrinsic body of the second triad is comprised of a nanocrystalline silicon:hydrogen semiconductor material, the intrinsic body of the third triad is comprised of nanocrystalline silicon:hydrogen semiconductor material, said device being characterized in that when the band gap of the intrinsic body of the first triad is greater than 1.8 eV, the maximum thickness of said first triad is less than 250 nm, and when the band gap of the intrinsic body of the first triad is greater than 1.7 eV, the maximum thickness of said first triad is less than 200 nm; and D. when said device is a triple tandem device further including a third photovoltaic triad stacked in an optical and electrical relationship with the first and second triad, so that the second triad is interposed between said first and third triad, wherein the intrinsic body of the first triad is comprised of an amorphous silicon:hydrogen semiconductor material, the intrinsic body of the second triad is comprised of an amorphous silicon:germanium:hydrogen semiconductor material, the intrinsic body of the third triad is comprised of an amorphous silicon:germanium:hydrogen semiconductor material, said device being characterized in that when the band gap of the intrinsic body of the first triad is greater than 1.8 eV, the maximum thickness of said first triad is less than 150 nm, and when the band gap of the intrinsic body of the first triad is greater than 1.7 eV, the maximum thickness of said first triad is less than 120 nm.
24. An n-doped, hydrogenated, silicon-oxygen semiconductor alloy comprising, on an atomic basis: 40-60% silicon; 40-60% oxygen; 10-20% hydrogen; and 0.1-1.5% phosphorus; said semiconductor alloy having an index of refraction in the range of 1.7-2.1, an optical band gap in the range of 2.1-2.4 eV, and an electrical conductivity in the range of 10.sup.-5-10.sup.-1 Ω-1cm.sup.-1.
25. The semiconductor alloy of claim 24, further comprising, on an atomic basis, a material selected from the group consisting of: carbon and/or nitrogen.
 This invention relates generally to photovoltaic devices. More specifically the invention relates to tandem photovoltaic devices comprised of stacked photovoltaic cells. In particular the invention relates to tandem photovoltaic devices in which one of the electronically active semiconductor layers of at least one of the stacked cells is a dual function layer which also acts as a light-reflective layer.
 Tandem photovoltaic devices are constructed to include two or more photovoltaic cells stacked in an optical and electrical series relationship so that incident light passes, serially, through the stacked cells so as to generate a photo current. Since the cells are stacked in an electrical series relationship, the resultant voltage of the photovoltaic device is increased over that which would be obtained with a single cell device. Likewise, stacking the cells in an optical series relationship enhances the absorption of incident light. Furthermore, in many instances, the stacked cells are fabricated from materials having different band gaps and hence different optical absorptions; therefore, such devices (often referred to as spectrum-splitting devices) are capable of utilizing a wider portion of the available spectrum. In constructing tandem photovoltaic devices, it is necessary to maintain proper balance between the photo currents generated by the individual cells so as to optimize the output of the tandem device. Photogenerated current will be proportional to the amount of light absorbed by the cells, and in some instances currents may be balanced by simply controlling the relative thicknesses of the light absorbing layer of the individual cells.
 It has previously been appreciated that fabricating the bottom (non-light incident) cell of narrow band gap material, additional photocurrent can be generated. However, the current that is thereby photogenerated in each cell of the tandem must be balanced and, in order to match the current, it is necessary to increase the thickness of the intrinsic layer of the upper (light incident) cell. The problem is that a thicker intrinsic layer is not as effective in collecting photogenerated charge carriers because of light induced degradation known as the "Staebler Wronski" degradation.
 The prior art has, in newer generations of tandem photovoltaic devices, utilized light reflective "interlayers" to balance photocurrents. In this approach, a layer of partially light-reflective material is disposed between the stacked cells of the tandem device. This interlayer functions to redirect some portion of the light which has passed through the topmost cell of the stack back through that cell for further absorption. In this manner, photocurrent generated by the top cell is increased, while photocurrent generated by the bottom cell is correspondingly reduced. By utilizing the interlayer, the thickness of the top layer may be decreased thereby realizing economies in the production of these photovoltaic devices and also reducing the light-induced degradation caused by the Staebler-Wronski effect.
 In typical prior art implementations, reflective interlayers for tandem photovoltaic devices are prepared from relatively transparent metal oxides such as zinc oxide and the like, as well as nonmetallic oxides such as silicon oxides. Typical layer thicknesses are in the range of 50 to 200 nanometers. U.S. Pat. No. 6,632,993 discloses "hybrid" tandem photovoltaic devices incorporating a light-reflective interlayer that can be fabricated from a variety of materials. The hybrid device is the combination of an amorphous semiconductor top cell and a polycrystalline semiconductor bottom cell having a light incident transparent substrate (glass) and with the interlayer operatively disposed between the two cells.
 While there are a number of advantages attendant upon the incorporation of a light-reflective interlayer into a tandem photovoltaic device, the use of a separate interlayer also serves to complicate device manufacture and performance. Further, capital costs increase because extra chambers are required for the vacuum deposition of the interlayer. Incorporation of an additional layer of material into the photovoltaic device will necessitate separate deposition steps and stations thereby complicating process equipment. Additionally, the interlayer can add additional series resistance to the device thereby degrading its overall efficiency of the tandem photovoltaic devices. Also, the quality of the junction between the individual stacked cells in a tandem photovoltaic device is a critical factor in overall device performance (this junction is referred to as a "tunnel junction") and typically current passes therethrough with very minimal loss. It is important that the junction between the cells not present any significant electronic barrier to current flow; in that regard, it is necessary to establish and maintain a high quality tunnel junction between the cells so as to maximize device efficiency. The presence of a separate interlayer body can interfere with the formation of the tunnel junction.
 As will be explained in detail hereinbelow, the present invention has recognized that in tandem photovoltaic devices, certain active semiconductor layers of the component cell can also function as light reflective and redirecting elements thereby securing the advantages of the use of a light-reflective interlayer without requiring the presence of a discrete reflective interlayer. The methods and materials of the present invention enable the maintenance of a high quality tunnel junction between stacked cells while redirecting light back through the device resulting in overall improvement of tandem photovoltaic cell efficiencies. Furthermore, use of the materials and methods of the present invention simplifies the manufacturing of the photovoltaic devices. These and other advantages of the present invention will be apparent from the drawings, discussion, and description which follow. Because no extra layer is needed in the tandem pv structures, the loss in the bottom cell current is not larger than the gain in the top cell current. Therefore, the cell structure in this invention has a significant advantage in terms of total photocurrent in the stacked structure.
 Disclosed is a tandem photovoltaic device which is comprised of a first and a second photovoltaic triad. Each triad is comprised of a body of substantially intrinsic semiconductor material interposed between a body of p-doped semiconductor material and a body of n-doped semiconductor material. These triads are disposed in a stacked optical and electrical series relationship such that the first triad is closer to the light-incident surface of the photovoltaic device than is the second triad. According to the present invention, the body of n-doped semiconductor material of the first triad is comprised of a dual function, n-doped, hydrogenated, silicon-oxygen material. This dual function semiconductor material is further characterized in that in the operation of the photovoltaic device it establishes a high quality tunnel junction with the p-doped layer of the second triad. In the operation of the photovoltaic device, the dual function layer operates to create a field in the intrinsic body of the first triad which separates photogenerated charge carrier pairs formed therein by absorbed photons. The dual function layer also operates as a partially reflective layer which directs a portion of those photons striking it back into the intrinsic body of the first triad.
 In specific instances, the optical band gap of the dual function semiconductor material is in the range of 2.1-2.4 eV. The dual function semiconductor material may be doped with phosphorus, and one specific doping level is in the range of 1-5%. The dual function semiconductor material may, in some instances, also include carbon and nitrogen.
 The tandem photovoltaic device may be configured so that the optical band gap of the intrinsic semiconductor material of the first triad is greater than the optical band gap of the second triad. In specific instances, the intrinsic layer of at least one of the triads is comprised of a hydrogenated silicon alloy material, and in other instances at least one of the triads is composed of a hydrogenated silicon-germanium alloy material. In one specific embodiment, the intrinsic layer of the first triad is comprised of a substantially amorphous body of hydrogenated silicon alloy material and the intrinsic body of the second triad is comprised of a nanocrystalline, hydrogenated silicon alloy, or silicon-germanium, material.
 Further disclosed is an n-doped hydrogenated silicon-oxygen semiconductor alloy comprising, on an atomic basis: 40-60 at. % of silicon; 60-40 at. % of oxygen; 10-20 at. % of hydrogen; and 1020-1021 cm-3 of phosphorus. This semiconductor alloy material has an index of refraction in the range of 1.7-2.1, an optical band gap in the range of 2.1-2.4 eV, and an electrical conductivity in the range of 10-5-10-1 Ω-1cm-1. This semiconductor alloy material may optionally include carbon in and amount of up to 10 atomic percent.
 FIG. 3 is a cross-sectional view of a tandem photovoltaic device of the present invention incorporating a dual function layer.
 In accord with the present invention, tandem photovoltaic devices are fabricated to include a dual function layer of semiconductor material. This semiconductor layer operates as an active electronic element of the device, and in that regard participates in the generation and/or collection of photogenerated carrier pairs. The layer also functions to reflect light back through the other active layers of the photovoltaic device wherein it is absorbed to generate further carrier pairs. The principles of the present invention will be explained with regard to tandem photovoltaic devices based upon stacked cells, each of which is comprised of a triad of active semiconductor layers. Each triad includes a layer of substantially intrinsic semiconductor material having a layer of p-doped semiconductor material on one side thereof and a layer of n-doped semiconductor material on the other side thereof. It is understood that the central, intrinsic layer of semiconductor material may be slightly p type or slightly n type with regard to its conductivity without compromising the operation of the cell. Therefore, in the context of this disclosure, the central layer is interchangeably referred to as being "intrinsic" or "substantially intrinsic". It is also to be understood that while the triad is described as including a substantially intrinsic layer of semiconductor material having p-doped and n-doped layers on opposite faces thereof, in many instances the individual layers of the triad may be composites of two or more sublayers. For example, the substantially intrinsic layer may be comprised of a number of sublayers having different or graded band gaps, or other varying physical and/or electronic properties. Likewise, the p-doped layer or the n-doped layer may be comprised of a number of sublayers. In any instance, the principles of the present invention may be implemented in all of such embodiments.
 Referring now to FIG. 1, there is shown a simplified cross-sectional view of a generalized tandem photovoltaic device of the prior art, and the present invention will have utility and applicability in devices of this general type, among others. The device 10 of FIG. 1 is a dual tandem photovoltaic device, and in that regard it includes a first photovoltaic cell defined by a first triad 12 of semiconductor layers and a second photovoltaic cell defined by a second triad 14 of semiconductor layers. The first triad 12 is comprised of a body of substantially intrinsic semiconductor material 16 which in this instance is a body of an amorphous silicon-hydrogen alloy material. Disposed on a top face of the intrinsic layer 16 is a layer of p-doped semiconductor material, which in this instance is a layer of nanocrystalline, boron doped silicon-hydrogen alloy material. On the opposite face of the intrinsic layer 16 is a layer of n-doped semiconductor material 20 which in this instance is a layer of phosphorus doped silicon-hydrogen alloy material.
 The second triad 14 is comprised of a layer of substantially intrinsic semiconductor material 22, which in this instance is a layer of nano crystalline silicon-hydrogen alloy material. Disposed upon a top surface of the intrinsic layer 22 is a layer of p-doped semiconductor material 24 which is substantially similar to the layer of p-doped semiconductor material 18 in the first triad. On the opposite face of the substantially intrinsic layer 22 is a layer of n-doped semiconductor material 26 which is similar to the layer of n-doped semiconductor material 20 in the first triad.
 The device 10 of FIG. 1 is supported upon a stainless steel substrate 28, although in other instances the substrate may be otherwise comprised. For example, the substrate 28 may comprise a body of polymeric material, a body of another metal, a ceramic, glass, or the like. As is known in the art, the substrate 28 forms a bottom electrode of the photovoltaic device, and in those instances where it is fabricated from a material having low electrical conductivity, a layer of metal or the like is supported thereupon to serve as a bottom electrode. In the FIG. 1 embodiment, a back reflector structure is incorporated between the second triad 14 and the substrate 28. This back reflector is comprised of a layer of a reflective metal 30 such as silver, silver alloys, aluminum, aluminum alloys, and the like. Disposed atop the light-reflective 30 is a textured layer of a transparent, electrically conductive material such as zinc oxide. This transparent, textured layer 32 serves to enhance the scattering of reflected light thereby further increasing the efficiency of the device. The photovoltaic device 10 of FIG. 1 includes a top electrode 34 fabricated from a transparent, electrically conductive material such as indium tin oxide, indium oxide, zinc oxide, or some other such transparent, electrically conductive material. A current collecting grid structure 36 is disposed atop the top electrode 34, as is known in the art.
 In the operation of the tandem device of FIG. 1, incident light passes through the top electrode 34 and through the p layer 18 of the first triad. This light is partially absorbed by the first substantially intrinsic layer 16. The absorbed light creates electron-hole carrier pairs in the intrinsic layer 16. The electrical field established by the p-doped layer 18 and n-doped layer 20 serves to separate these carrier pairs, and they are ultimately collected by the top electrode 34 and the substrate electrode 28. Unabsorbed light passes through the n-doped layer 20 of the first triad and the p-doped layer 24 of the second triad to the second substantially intrinsic layer 22 where some portion of it is absorbed to create further carrier pairs which are collected as discussed above. Unabsorbed light is reflected back through the triads by the back reflector structure. As described herein the intrinsic layer 16 of the first triad 12 is fabricated from a substantially amorphous silicon-hydrogen alloy, and hence it will have a larger band gap than the second intrinsic body 22 which is fabricated from a nanocrystalline material. In this regard, the first triad will preferentially absorb the shorter wavelengths of the incident spectrum than will the second triad. It is to be understood that while FIG. 1 shows a tandem photovoltaic device comprised of two stacked cells, tandem devices of this type may also be prepared utilizing three or more stacked cells.
 Referring now to FIG. 2, there is shown a tandem photovoltaic device 40 of the prior art, incorporating a discrete reflective interlayer therein. The device 40 of FIG. 2 is generally similar to the device 10 of FIG. 1 insofar as it includes two stacked cells comprised respectively of a first triad 12 and a second triad 14. The device 40 of FIG. 2 also includes a substrate 28 and a back reflector structure comprised of a light-reflective layer 30 and a textured transparent conductive layer as well as a top electrode 34 and grid 36, all as previously described. Where FIG. 2 differs from FIG. 1 is that it includes a light-reflective interlayer 42 interposed between the n layer 20 of the first triad 12 and the p layer 24 of the second triad 14. This interlayer 42 operates to reflect some portion of light which has passed through the first triad 12 back therethrough for further absorption. The interlayer 42 is fabricated from a relatively transparent material such as zinc oxide, silicon oxide, or other such oxides. The layer 42 has an index of refraction such that it will establish a reflective condition at its interface with the overlying n-doped layer 20, for at least some of the incident light.
 The thickness of the intrinsic layer 16 of the first triad 12 of the device 40 of FIG. 2 is somewhat less than the thickness of the corresponding layer 20 in the FIG. 1 embodiment. This is because the relatively thinner layer of the FIG. 2 embodiment, owing to the presence of the reflective interlayer 42, receives a higher degree of illumination and can generate more current per unit volume than can the thicker layer of the FIG. 1 embodiment.
 Referring now to FIG. 3, there is shown a tandem photovoltaic device 50 of the present invention. As in the prior drawings, the device 50 of FIG. 3 is comprised of a first triad 12 of semiconductor layers and a second triad 14 of semiconductor layers. The device 50 includes a substrate 28 and back reflector structure comprised of a reflective layer 30 and textured, transparent layer 32 as discussed above. The FIG. 3 device 50 also includes a top electrode 34 and a grid 36 as previously discussed.
 Where the FIG. 3 device 50 differs from the FIG. 1 and FIG. 2 devices is with regard to the n-doped layer of the first triad 12. While the first triad 12 of the FIG. 3 device 50 includes a p-doped layer 18 and a substantially intrinsic layer 16 as in the FIG. 1 and FIG. 2 prior art embodiments, the n-doped layer of the first triad in this instance is a dual function layer 52 which operates both as an active, n-doped semiconductor layer and as a reflective layer. In this regard, the layer 52 operates, in combination with the p-doped layer 18, to create a field which separates charge carriers formed in the intrinsic layer 16 and it also operates to reflect light back through the intrinsic layer 16; hence it is referred to as a dual function layer. It will be noted that the substantially intrinsic layer 16 of the FIG. 3 embodiment is generally similar in thickness to the substantially intrinsic layer of the FIG. 2 embodiment, and this is because the dual function layer 52 serves to enhance the illumination passing through it. Thus, the present invention allows for the use of relatively thin bodies of intrinsic material in the top triad, while still preserving practical device efficiency. The thickness limitations of the top triad will depend on the device configuration (dual tandem, triple tandem, etc.) as well as the properties, such as band gap (Eg) of the semiconductor materials comprising the devices (amorphous, nanocrystalline, Si;H, Si;Ge;H, etc). Summarized in Table 1 below are maximum top triad thicknesses for four different tandem device configurations incorporating the dual function layer of the present invention. For each device configuration, the maximum cell thickness is given for instances in which the band gaps of the intrinsic material of the top triad is >1.7 eV and >1.8 eV.
 One further advantage of the present invention will be apparent from a comparison of the prior art device 40 of FIG. 2 with the inventive device 50 of FIG. 3. In the prior art device, reflection of light takes place at the interface of the interlayer 42 with the n layer 20 of the first triad 12. Hence, the reflected light must pass through the n layer 20 before it reaches the intrinsic layer 16. Some portion of this reflected light will be absorbed, non-productively, in the n layer 20 and not be available for the generation of carrier pairs. In the device 50 of the present invention, light is reflected at the interface of the dual function layer 52 and the substantially intrinsic layer 16; therefore all of the reflected light is available for the generation of carrier pairs in the intrinsic layer 16.
 As discussed above, the efficient operation of a tandem photovoltaic device requires that charge carriers passing between the interface of a first triad and a second triad not encounter any significant barriers which would impede their flow and thereby degrade the efficiency of the device. In this regard it is essential that a high quality tunnel junction be established between the triads. It is notable that use of the dual function layer of the present invention allows for the maintenance of a high quality tunnel junction between the triads. The dual function layer of the present invention should, in addition to fostering the creation of a high quality tunnel junction, have an index of refraction such that it will create reflective conditions at its interface with the superjacent body of substantially intrinsic semiconductor material. In this regard, the index of refraction will typically be in the range of 1.7-2.1 The dual function semiconductor material should also have reasonably good electrical conductivity, and in specific instances it will have a conductivity in the range of 10-5-10-1 Ω-1cm-1. Optical band gap properties of the material of this layer should be compatible with the photovoltaic device and typically will fall in the range of 2.1-2.4 eV.
 Since the dual function layer reflects light back through the intrinsic layer of its triad, it will establish an interference condition which will be correlatable with the thickness of the intrinsic layer. This interference condition will be evidence of the presence of the reflective function of the layer. And in this regard, the quantum efficiency curve of the device, which is understood in the art to be a plot of the quantum efficiency versus illuminating wavelength, will manifest interference fringes, which can be correlated with intrinsic layer thickness.
 One group of semiconductor materials having utility as dual function layer materials in the present invention comprise semiconductors based upon hydrogenated silicon-oxygen alloys. These materials may be doped to have n-type conductivity by the use of dopants such as phosphorus. A specific group of materials of this type comprise, on an atomic basis, 40-60% silicon; 40-60% oxygen; 10-20% hydrogen, with phosphorus doping levels being in the range of 0.5-5%. These materials may optionally include carbon in an amount of up to 10%. One specific group of materials used in the present invention comprised approximately 60-70% silicon, 30-40% oxygen, 10-20% hydrogen, and approximately 1-3% of carbon.
 In general, the dual-function semiconductor layers can be deposited using various methods, such as plasma enhanced chemical vapor deposition (PECVD), hot-wire chemical vapor deposition (Hot-wire-CVD), and photo-induced chemical vapor deposition (Photo-CVD). For PECVD, the excitation sources can be DC power, radio frequency (rf), very high frequency (vhf), and microwave. The deposition temperature should be compatible with the process parameters in other layers in the tandem solar cell structures. Normally, it covers the range from 100° C. to 350° C. The deposition pressure depends on the methods used in the process; it ranges from milli-torrs to atmospheric pressure. The process gases include silicon containing gases such as SiH4, Si2H6, and Si3H8; gases containing oxygen, carbon, and nitrogen such as CO, CO2, CH4, C2H4, C2H6, NO2; diluent gases such as H2, Ar, and He; and dopant gases such as PH3, BF3, B2H6, and B(CH3)3.
 Examples which demonstrate the concept of the present invention are given below. The dual-function layer is, in one embodiment, a SiOx:H film deposited using a vhf PECVD method with a hydrogen diluted Si2H6 and CO2 mixture, where PH3 is used as n-doping gas. The n-doped SiOx:H layer contains nanocrystallites disposed in an amorphous matrix such that the current can pass through the low resistance nanocrystalline paths. In addition, the level of phosphorus doping is relatively high and moves the Fermi level of the material toward the conduction band edge, which makes this material suitable for the n layer of a-Si:H top cell. The refractive index of the material can be tuned in a range of 1.7 to 3.6 by changing the ratio of CO2/Si2H6. The specific material used in the a-Si:H/nc-Si:H tandem solar cells contains about 50 at. % of Si, 44 at. % O, and 6 at. % of C. The optical band gap is 2.3 eV, refractive index is 2.0, and the vertical conductivity is high enough to form good a tunnel junction. Because the n-doped SiOx:H is used as the top cell n layer, it has wider band gap and lower absorption coefficients than conventional n-doped a-Si:H and nc-Si:H, the light absorption in the tunnel junction with the dual function SiOx:H n layer is reduced significantly.
 As reported in the prior art, the interlayer in discrete interlayer tandem solar cells causes a loss in the bottom cell current, which is larger than the gain in the top cell current because the interlayer induces extra light absorption and it also reflects some long wavelength light that cannot be absorbed by the top cell. In the present invention, the dual function SiOx:H layer replaces the n layer in the top cell; thus, the absorption is reduced comparing to the cell structure with no interlayer as shown in FIG. 1. Although there could be some reflected long wavelength light that could not be absorbed by the top cell, the overall loss in the bottom cell current is not more than the gain in the top cell current.
 In an experimental series, the performance of a tandem photovoltaic cell of the present invention was compared with that of prior art cells of the type shown in FIGS. 1 and 2. The first prior art device of this series, referred to herein as device A, comprises two stacked triads having no interlayer therebetween. The topmost triad of device A included a substantially intrinsic layer fabricated from an amorphous, hydrogenated, silicon alloy material. The intrinsic layer of the bottom triad was fabricated from a narrower band gap hydrogenated nanocrystalline silicon alloy material. The second device, referred to herein as device B, was generally similar to device A except that it included an interlayer fabricated from a SiOx:H material inserted between the pin tunnel junction. The third device, C, was structured in accord with the present invention. In that regard it included stacked triads generally similar to those of cells A and B, except that the n doped layer of the top triad was a dual function layer in accord with the present invention and comprised a phosphorus doped hydrogenated silicon oxygen material.
 The three devices were evaluated in accord with art-recognized procedures. In that regard, quantum efficiency, as a function of illuminating wavelength, was measured for each of the constituent triads of each of the three devices utilizing an AM 1.5 solar spectrum. Current densities for the constituent triads and total current densities for the devices were obtained from the integrals of the quantum efficiency/wavelength curves, and these results are summarized in Table 2 below.
 The results of this experimental series demonstrated that in device B the presence of the interlayer increases the current density in the top triad from 11.16 to 11.66 mA/cm2, but decreases the current density of the bottom triad from 11.23 to 9.18 mA/cm2. This observed result is similar to published results found in the literature.
 In device C, the dual function layer increased the current density of the top triad to 11.66 mA/cm2, and also increased the current density of the bottom triad to 11.45 mA/cm2. As will be seen from Table 1, the performance of device C with regard to overall current density as well as current density of the triads exceeded that of the prior art devices A and B.
 It is known in the art that exposure to illumination can cause a degradation in the efficiency of operation of photovoltaic devices, and the extent of such degradation is dependent upon specific materials and device configuration. In a further experimental series, the effect of photo-induced degradation on the aforedescribed tandem devices of the prior art and present invention was evaluated. In this regard, devices A, B and C as described above were evaluated with regard to performance characteristics including fill factor, maximum power, short circuit current, and efficiency. Thereafter, the devices were light soaked for a period of 800 hours under AM 1.5 illumination, and their properties were measured once again. Results of this evaluation are summarized in Table 3 below.
 As discussed above, both the discrete interlayer of the prior art and the dual function layer of the present invention operate to redistribute current densities between the top and bottom triads; however, the gain in top cell current and reduction in bottom cell current by the discrete interlayer of cell B leads to a very large current mismatch in the device. While this mismatch is detrimental to overall device operation, it does produce an apparently improved fill factor as compared to the other devices. As will be seen from the data, light soaking degrades the efficiency by 10.7% for the baseline cell and degrades the efficiency of the discrete interlayer cell by 3.0%, which is again attributable to the large current mismatch. Similar light soaking produces 6.7% degradation in the efficiency of the device of the present invention. It will also be seen that the open circuit voltage is slightly increased in all devices by light soaking. Combining all the characteristics, the stable efficiency of the device of the present invention is found to be 3% higher than that of the baseline cell.
 As discussed above, the current produced by the top triad in a tandem device may be increased, in the absence of any reflective interlayer, by simply increasing the thickness of the intrinsic layer of that triad. However, doing so increases deposition time, material cost, and size of the deposition system. And, even more significantly, thicker layers are more prone to photo degradation, which compromises device performance. In a further experimental series, the performance of tandem devices of the present invention were compared with the performance of generally similar tandem devices which did not include an interlayer but did include thicker top cell triads. In this experimental series, as summarized in Table 3 below, a series of four devices were compared. Device A is generally similar to the device A discussed above and comprised a tandem stack of two triads which did not include any interlayer. Device B is generally similar to device A, except that the intrinsic layer of the top triad was 20% thicker than that of device A. Device C was generally similar to device A except that the intrinsic layer of the top triad was 44% thicker than that of device A. Device D was the device of the present invention as described above. For each of these devices, the current density was measured in accord with the techniques described with regard to Table 2.
 As will be seen from Table 4, increasing top cell thickness can increase the top cell current, but the effect is not as strong as expected. Increasing top cell thickness by 44% as shown in device D results in a current gain of 0.67 mA/cm2. However, use of the dual function SiOx:H layer of the present invention leads to an increased top cell current of 0.86 mA/cm2. In addition to being uneconomical to prepare, devices having increased thicknesses in the intrinsic layers of the upper cell suffer from increased photo degradation as compared to the inner cells of the present invention. In a further experimental evaluation, the four devices of Table 4 were subjected to light-induced degradation by light soaking for 500 hours. As described with regard to Table 3, the performance characteristics of devices A-D were evaluated before and after the light soaking. The results of these evaluations are summarized in Table 5 hereinbelow.
 As will be seen from this data, increasing the top cell thickness results in extra light-induced degradation as compared to the baseline device A. In contrast, the use of the dual function layer of the present invention, as shown in device D, increases top cell current as effectively as does thickening the top cell, without increasing the amount of light-induced degradation. In fact, the overall light-induced degradation in device D is lower than that of any of the other devices.
 In summary, the foregoing demonstrates that use of a dual function layer in the top cell of tandem photovoltaic devices will effectively increase the top cell current at least as effectively as does a discrete interlayer without decreasing bottom cell current so that the loss in bottom cell current is not larger than the gain in top cell current. This preserves current balance and increases device efficiency. Furthermore, light soaking experiments show that the tandem cell of the present invention with a dual function layer has lower light-induced degradation than do tandem cells with thicker top cell intrinsic layers. Overall, the dual function layer of the present invention operates to increase stable tandem cell efficiency.
 In a further experimental series, performance characteristics of four different types of tandem photovoltaic device structured in accord with the principles of the present invention were investigated. Device 1 was a dual tandem photovoltaic device having a top triad which contained an intrinsic layer fabricated from an amorphous silicon hydrogen alloy. The device included a second triad which had an intrinsic layer fabricated from a narrower band gap amorphous silicon germanium hydrogen alloy material. Device 2 was a triple tandem photovoltaic device comprised of three stacked triads. The intrinsic layer of the first triad was comprised of an amorphous silicon hydrogen alloy; the intrinsic layer of the second triad was fabricated from an amorphous silicon germanium hydrogen alloy; and the intrinsic layer of the third triad was fabricated from an amorphous silicon germanium hydrogen alloy. A third device was a dual tandem device having a first triad with an intrinsic layer fabricated from an amorphous silicon hydrogen alloy and a second triad with an intrinsic layer fabricated from a nanocrystalline silicon hydrogen alloy. A fourth device was a triple tandem device having a first triad in which the intrinsic layer was fabricated from an amorphous silicon hydrogen alloy; the intrinsic layer of the second triad was fabricated from a nanocrystalline silicon hydrogen alloy; and the third triad had an intrinsic layer fabricated from a nanocrystalline silicon hydrogen alloy material. In each of the devices, the n-doped layer of the top triad was a dual function layer in accord with the present invention. Performance characteristics of these devices were measured with regard to short circuit current (Jsc), open circuit voltage (Voc), and fill factor (FF). The efficiency of each of the devices was calculated from the foregoing parameters. In addition, a target efficiency was determined for each of the devices based upon expected efficiency from an optimized device. Table 6 below summarizes the results of this experimental series.
 It will be seen from the foregoing that devices which incorporate the dual function layer of the present invention all show efficiencies which equal or surpass a target value for optimized devices. This high level of performance is characteristic of devices of the present invention, and values for the short circuit voltage, open circuit voltage, and fill factor as determined herein are indicative of use of the present invention in the described devices.
 It will be seen from the foregoing that use of the dual function semiconductor layer of the present invention in tandem photovoltaic devices represents a significant improvement over the prior art insofar as it recognizes that particular semiconductor material can be advantageously employed in a dual function role which allows for the elimination of discrete interlayer structures. The dual function material provides a layer having both very good electronic properties with regard to creation and maintenance of an internal field and fostering of a high quality tunnel junction as well as good optical properties which allow for the creation of reflective interface conditions. This result is surprising and unexpected given that the prior art has heretofore employed separate electronic and optical layers and has not believed that an optical material having good transparency and a relatively high index of refraction could also function as an effective field-forming, tunnel junction promoting, doped semiconductor material. Use of the present invention greatly simplifies the construction and manufacture of high efficiency photovoltaic devices.
 While the foregoing discussion and description was directed to tandem photovoltaic devices comprising stacked triads of p-i-n construction, it is to be understood that the principles hereof may be extended to tandem devices comprised of other structures such as p-n structures and the like. Also, it is to be understood that the present invention may be readily implemented by one of skill in the art with regard to devices including three or more stacked photovoltaic cells. In such instance, the dual function layer of the present invention may be incorporated in one or more of the individual cells as appropriate.
 In view of the teaching presented herein, numerous other modifications and variations of the invention will be apparent to those of skill in the art. The foregoing drawings, discussion, and description are illustrative of specific embodiments but are not meant to be limitations upon the practice of the present invention. It is the following claims, including all equivalents, which define the scope of the invention.


text:
BAA Knew Disabled Passengers Could be Stranted at Edinburgh Airport
Thanks to the excellent reports by David McCann of the Edinburgh Evening News we now understand that BAA knew of the chances of disabled passengers being stranded weeks before the Edinburgh Airport incident occurred.
Well, not only BAA, but all parties involved. THS Scotland, BAA's special assistance sub contractor, Menzies Aviation, Baggage handler at Edinburgh Airport, and God knows who else.
So here is the sequence of events: Easyjet told everyone involved at Edinburgh Airport that disabled passengers requiring assistance "will be refused travel and bags off-loaded if not at the gate and ready to board".
Menzies Aviation acknowledged the note in a unique way, telling office staff that it was THS Scotland responsibility for delaying flights and urged workers to "show THS that we will no longer tolerate them arriving late . . . and delaying our departure".
All this was bickering was happening weeks before the group of six got stranded. Now let's fast forward to the fatal Saturday at the end of August. Six unfortunate travelers with reduced mobility reached the gate at Edinburgh Airport for their Easyjet flight to Belfast, and there waited for assistance to board the aircraft. All passengers minus the six disabled people were allowed to board the flight. After completing regular boarding procedures, an employee manning the gate informed the six unfortunate passengers that their luggage had been off-loaded, and the flight had left.
I do not know if it is the same in Edinburgh, but at London Heathrow Terminal 1 Menzies Aviation provides gates services along with baggage handling. If Edinburgh has the same setup, Menzies Aviation staff are manning gates.
The six complained, and the blame game began. Easyjet blamed THS Scotland. THS Scotland denies the allegation, according to sources of the Edinburgh Evening News.
BAA said that the disabled passengers "did not receive (the] normal service levels" and that they were investigating to ensure it did not happen again. The owner of THS Scotland chimed in as well, expressing his disappointment and promising a personal investigation. Menzies Aviation describes the incident as an "unfortunate event" and promised to "strive to do better".
Finally, an EasyJet spokesman said: "We are working very closely with the airport to find out what happened in this case. For us it's about making travel easy and when things go wrong we are very concerned."
This bickering and finger pointing is pathetic at best. Everybody busy covering their tracks and steering clear of blame. It almost feels as these guys are talking about an adverse event related to six suitcases left behind because they were "problematic" to load onto the aircraft hold.
This is the main problem I have when failings of this magnitude and nature surface. These guys, the ones whose role is to assist the most vulnerable among us, have to start thinking of them as human beings, not pieces of luggage.
Among the passengers left behind were an elderly stroke victim, a person who walks with a stick and suffers osteroporosis, and an adult with Down's Syndrome. In most cases, their reduced mobility is just the tip of the iceberg. These six passengers were humiliated and discriminated because of their condition.
No apology can change what happened. There has to be accountability and adequate punishment for those responsible; nothing more, nothing less. It is the only solution to reduce these incidents, making them become unique occurrences in an otherwise adequate support system.
I wish best of luck to the reduced mobility rights for their dedicated service towards the disabled people in air travel.
A. Matin


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Venezuelan top court upholds sentence for opp. leader
Venezuela's Supreme Court on Friday upheld a nearly 14-year prison sentence against political opposition leader Leopoldo Lopez for inciting violence during anti-government protests in 2014.
"The ratification of the judgment against Leopoldo Lopez is an exercise of what should never happen in a democratic country," Lopez's attorney Juan Carlos Gutierrez told Anadolu Agency. "It is an exercise of absence of law and absence of autonomy of the Venezuelan justice system."
Gutierrez said there is still a last hope with the court to get his client released but the legal team is already resorting to international organizations.
"In parallel we have a whole line of action to appeal to the United Nations where we will present all evidence that there have been systematic violations of fundamental rights", he added.
Gutierrez also appealed to the international community to denounce political policies in the South American nation and to demand the release of political prisoners. "It is up to the international community to condemn these anti-democratic practices and restore the rule of law in Venezuela and release political prisoners, especially Leopoldo Lopez", he said.
Lopez was sentenced last September for inciting violence at demonstrations against the administration of President Nicolas Maduro but defense lawyers appealed the Voluntad Popular (VP) party founder's sentence three weeks ago in a hearing that lasted about 15 hours.
Lopez was sentenced on charges of public incitement, conspiracy and damage to property in violence that caused 48 deaths and injuries to more than 800 other victims.
The charges stemmed from a speech Lopez delivered that helped spark months of nationwide protests.
At the July 23 appeal hearing, Lopez refused to back down and asserted his innocence. "I assume my full responsibility for having denounced the Venezuelan government as corrupt, poor, anti-democratic and repressive", he said.
Lopez has been held at the military prison of Ramo Verde since Feb. 18, 2014, when he surrendered to the National Guard.


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NerdyRooHealthType II Diabetes: Review
Type II Diabetes: Review
Subject: Health
Type II diabetes is a chronic metabolic disorder that is characterized by very high blood sugar levels in the circulation. The disease has been known for thousands of years now. It is one of the major killer disorders, but advances in the medical field now provide for remarkable management of the condition. Type II diabetes results from insulin resistance whereby the body fails to adequately use the insulin hormone that regulates glucose levels by aiding the entry of glucose into cells where glucose is broken down to yield energy in the form of ATP. Glucose accumulates in the bloodstream to high levels (hyperglycemia) when the cells get insensitive to insulin because no glucose gets into the cells. The liver is stimulated to produce more insulin as an inflammatory response to counter this anomaly, leading to hyperinsulinemia. Eventually, Type II diabetes complications occur. They include kidney failure, heart attack, and blindness. Type II diabetes is associated with high levels of ROS, which increases oxidative stress. Programmed cell death is observed after increased oxidative stress. All these processes at the cellular level worsen the presentation of diabetes type 2.
Diabetes is a term that is used to refer to higher blood glucose/sugar levels than normal. The term is borrowed from Greek words that mean "pass through". This term was associated with the major symptom of the disorder, which is passing too much urine (Porter, 2013). The human body requires energy to perform normal functions. This energy is obtained from the breakdown of foods, mainly carbohydrates, to produce glucose. A hormone known as insulin aids the glucose to gain entry into the body cells from the blood circulation system (Fradkin, & Rodgers, 2013). Diabetes Type II is a condition that occurs when the body produces insufficient insulin or the body is unable to use the insulin appropriately. It is a chronic condition that is characterized by very high blood glucose levels (Das, & Elbein, 2006). Type II diabetes is the most common type of diabetes, affecting 90%-95% among the 26 million Americans suffering from diabetes (Fradkin, & Rodgers, 2013). Unlike diabetes Type I, diabetes Type II is characterized by production of insulin, but either the pancreas produces insufficient quantities or the body fails to use the insulin produced well (Porter, 2013).
Diabetes is a disease that has affected humans for thousands of years now. The disease has the potential of causing deaths due to the complications associated with it. For instance, the disease was rated as the 7th killer health condition in the US in 2011. Diabetes is also a concern for other countries in the globe. It accounts for more than 100 billion dollars in the yearly expenditure of the United States healthcare budget (So et al., 2000). It was first recognized by the Egyptians in their manuscript that dates as back as 1550BC. Diabetes was known as "sweet urine" at that time and it was tested by finding out whether the patient's urine attracted ants (Porter, 2013). Injection of insulin in patients with the diabetes disorder at this moment managed to combat the condition remarkably, but not all patients were responsive to this treatment. It was, therefore, determined that there were two types of diabetes, which Harold Himsworth classified as "insulin-sensitive" and "insulin-insensitive" diabetes. These are now known as Type I and Type II diabetes respectively (Porter, 2013).
Cellular understanding of Type II diabetes
The normal functioning of the cell
Energy in the body is mainly produced from synthesis of carbohydrates to make glucose. Having been digested, the carbohydrates get into the blood circulation system, in the form of glucose, from where they can either be used by various tissues directly or stored in the form of glycogen for later use based on the metabolic needs of the body (Pillay, & Govender, 2013). The pancreas is signaled to produce a hormone known as insulin into the blood circulation system in situations whereby the blood sugar levels go above the normal. The hormone enables the excess glucose to penetrate into the body cells via a signaling pathway of insulin in a healthy individual (American Diabetes Association 2013). Glucose in the cells is turned into the ATP form of energy. The main process involved is called glyoclysis. However, other processes such as the citric acid cycle are important in converting glucose into a form that can be stored in body cells. In normal situations, normally about 36 ATP units are obtained from these carbohydrate/ATP conversion processes (Pillay, & Govender, 2013).
The signaling pathway of insulin is a biological process that triggers various multi-cellular functional effects on target cells, including muscle cells, fats, and liver cells. Insulin hormone regulates the levels of glucose in the blood circulation system. Besides, it is also known to take part in the metabolism of lipids and proteins. Insulin is produced via endogenous secretion into the bloodstream by cells known as beta islets located in the pancreas (Das, & Elbein, 2006).
The hormone affects the metabolism of carbohydrates in varied ways. It raises the glucose transport rate across the membrane of muscle cells and adipose tissue. This is achieved by activation of Glut4. Insulin also stimulates the muscle, fat, as well as the liver to synthesize glycogen. It increases the glycolysis rate in these cells and inhibits the breakdown of glycogen (glycogenolysis), as well as glucogeneosis in the liver. In the metabolism of protein, insulin affects this process by increasing the rate of transportation of amino acids from the circulation into tissues. It increases the synthesis of proteins in the liver, muscles, as well as the adipose tissue. It also minimizes the formation of urea and the degradation of the proteins in these cells (Fradkin, & Rodgers, 2013). The hormone further affects the lipid metabolism by minimizing the rate of oxidation of fatty acids, thereby inhibiting the breakdown of lipids. It also increases the synthesis of fatty acids and triglycerol, formation of Low-Density Lipids (LDL), and uptake of triglycerides from the circulation into the muscles (Bitar et al., 2010).
The hormone insulin performs these functions through specific receptor binding to the surfaces of cells like the liver, the muscles, and the adipose cells. The insulin activates the receptors to start self phosphorylation. This further phosphorylates other substrates like insulin receptor substrate 1 and 2, which play a central role in the proceeding sub pathways of insulin, P13k and MAP (So et al., 2000).
In human beings, carbohydrates are stored primarily in the liver and muscle cells in the form of glycogen, which is a glucose polymer with up to 12,000 units of glucose. The storage happens following a process referred to as glycogenesis (Das, & Elbein, 2006). As soon as glucose gets into the liver and muscle cells through the help of insulin, hexokinase or glucokinase immediately convert it into Glucose-6-Phosphate (G6P). The G6P is, in turn, converted into glucose-1-phosphate (G1P) by phosphoglutomutase, then into UDP-glucose by G1P-uridyltransferase, and finally UDP-glucose is removed by glycogen synthase enzyme and deposited into glycogen stores. Glycogen is broken down for energy use via the glycolysis process stimulated by glucagon enzyme produced by alpha islets in the pancreas when blood glucose levels go down and carbohydrates are unavailable for breakdown. In addition, an alternative process to obtain glucose, gluconeogenesis, can be used. The biochemical process takes place in the liver where glucose is synthesized from fats.
Source: OSU (n.d.).
Source: Porter (2013).
Diabetes occurs when the cells responsible for taking glucose out of the blood system into the cells for conversion into energy (liver cells, muscle cells, and adipose cells) fail to adequately react to the circulating insulin hormone. The sensitivity of these cells towards insulin is lost, a condition known as insulin resistance (Bitar et al., 2010). Consequently, the level of glucose/sugar in the bloodstream goes up. The increase in the glucose levels in the blood circulation beyond the normal range triggers a signal as a body reaction towards this change in the pancreas, which reacts suddenly by increasing the secretion of insulin hormone. Resultantly, insulin levels in the bloodstream go high, a condition that is referred to as hyperinsulinemia (Fradkin, & Rodgers, 2013). At the same time, the liver cells also gain insulin resistance. The cells are stimulated to produce a lot of glucose as a response towards insulin resistance. The sugar accumulates in the bloodstream owing to the fact that glucose is not being absorbed properly into the cells due to inadequate use of insulin hormone by the cells. This leads into very high levels of glucose, a condition that is known as hyperglycemia (Bitar et al., 2010).
The red blood cells are damaged due to the increase in blood glucose because the molecules of glucose are affixed to the exterior part of the red blood cells, resulting in the formation of a crystalline crust. The coarse crust is the one that is responsible for the damage of arteries and capillaries throughout the body (Henriksen et al., 2011). Further, the body reacts by attempting to repair this damage by signaling the liver to produce more cholesterol as an inflammatory response. However, this brings about the formation of an arterial plaque that can cause more damage to denser capillaries like those located on the hands and feet and fragile capillaries like those responsible for feeding the kidney and the eyes. All these series of occurrences lead to notable complications that characterize the major symptoms of Type II diabetes, including blindness, kidney failure, stroke of the heart, as well as heart attack and amputation. Other health issues that accompany Type II diabetes include high blood pressure, high levels of cholesterol, high inflammations, erectile dysfunction, as well as periodontal disease (Henriksen et al., 2011).
Cellular dysfunction related to Type II diabetes
The production of reactive oxygen species (ROS) in the cells of the body is primarily done by the mitochondria, although they may be produced by other cell organelles like the peroxisomes. Most pathophysiological disorders like Type II diabetes have been associated with high levels of ROS. The islet cells are the chief producers of ROS in people suffering from Type II diabetes compared to people who are non-diabetic. High levels of ROS production have been associated with obesity, as well as hyperglycemia (Pillay, & Govender, 2013). The skeletal muscles rely on ROS to remain responsive to presence of insulin. Moreover, insulin signaling may be inhibited by ROS (Das, & Elbein, 2006).
ROS support the fragmentation of DNA, cross-linking of proteins, and oxidative breakdown of phospholipids. They also activate numerous stress pathways. It is, therefore, imperative for the ROS to be promptly gotten rid of from the mitochondria. Patients suffering from Type II diabetes normally exhibit abnormalities in the morphology of their beta mitochondria islet cells, including hypertrophy, circular shape, and denser mitochondria in comparison to the beta mitochondria cells of people who are non-diabetic (Sanghera, & Blackett, 2012). High ROS levels have been associated with altered morphology seen in mitochondria of diabetic individuals. Moreover, high ROS trigger oxidative stress, which plays a role in the breakdown of lipids, as well as the damage of cell membranes and DNA. This, in turn, triggers a series of events that worsen the severity of the Type II diabetic condition (Pillay, & Govender, 2013).
Reduced beta-cell mass and function plays a role in the pathogenesis of the failure of the beta cells, which is common in individuals with Type II diabetes. Increased beta-cell death by apoptosis has been associated with decreased beta-cell volume in individuals suffering from Type II diabetes. Apoptosis is a term that is used to describe a form of programmed cell death that plays a major role in the elimination of defective, old, as well as unimportant cells from the body. Notably, Type II diabetes is characterized by a reduction in beta-cell mass as a result of high apoptosis of these cells. Cytochrome C is secreted from the mitochondria during apoptosis into the cell cytoplasm via the pro-apoptotic stimuli (American Diabetes Association, 2013). Apoptosomes that activate caspase-9 are then formed with the aid of the cytochrome C. The caspase-9, in turn, activates caspaces 3, 6, and 7, which are executioners that degrade the cell during programmed cell death (Pillay, & Govender, 2013). For instance, renal failure in Type II diabetic individuals has a very close relationship with a high apoptosis rate that accompanies hyperglycemia. In the insulin signaling pathway, hyperglycemia decreases the activation of Akt, a threonine kinase controlling metabolism of proteins, glycogenesis, synthesis of proteins, and death of cells in the P13K sub-pathway. It also raises the activity of p38 MAPK (Singh, 2011).
The formation of HbA1c, a combination of hemoglobin with glucose in the body by glycation occurring when hemoglobin is exposed to high blood glucose levels, is proportional to the amount of glucose in the circulation (American Diabetes Association 2013). Many complications that accompany Type II diabetes are associated with high HbA1c levels, which are in turn associated with the high risk of cardiovascular disorder in diabetic individuals. Lipids are stored in two forms in the muscles; extramyocellular lipid (EMCL) and intramyocellular lipids (IMCL). High levels of IMCL reduce the insulin sensitivity remarkably in human beings, especially when the functioning of mitochondria is compromised (Singh, 2011).
American Diabetes Association. (2013). Standards of medical care in diabetes–2013. Diabetes Care, 36(Suppl 1), S11-66. Web.
Bitar, M. S., Ayed, A. K., Abdel-Halim, S. M., Isenovic, E. R., & Al-Mulla, F. (2010). Inflammation and apoptosis in aortic tissues of aged type II diabetes: Amelioration with α-lipoic acid through phosphatidylinositol 3-kinase/Akt- dependent mechanism. Life Sciences, 86(23/24), 844-853. Web.
Das, S. K., & Elbein, S. C. (2006). The genetic basis of type 2 diabetes. Cellscience, 2(4), 100-131. Web.
Fradkin, J., & Rodgers, G. (2013). Diabetes research: a perspective from the National Institute of Diabetes and Digestive and Kidney Diseases. Diabetes, 62(2), 320-326. Web.
Henriksen, E. J., Diamond-Stanic, M. K., & Marchionne, E. M. (2011). Oxidative stress and the etiology of insulin resistance and type 2 diabetes. Free Radical Biology & Medicine, 51(5), 993-999. Web.
OSU. (n.d.). Cell biology of disease and exercise. Web.
Pillay, K., & Govender, P. (2013). Amylin uncovered: a review on the polypeptide responsible for type ii diabetes. Biomed Research International, 1-17. Web.
Porter, E. (2013). Type 2 diabetes: History of type 2 diabetes. Web.
Sanghera, D. K., & Blackett, P. R. (2012). Type 2 diabetes genetics: Beyond GWAS. J Diabetes Metab, 3:198. Web.
Singh, S. (2011). The genetics of type 2 diabetes mellitus: A review. Journal of Scientific Research, 55, 35-48.
So, W. Y., Ng, M. C., Lee, S. C., Sanke, T., Lee, H. K., & Chan, J. C. (2000). Genetics of type 2 diabetes mellitus. Hong Kong Med J., 6(1), 69-76
Ethical Principles in Health Care
Economic Terms and Health Care History
NerdyRoo. (2022, April 2). Type II Diabetes: Review. https://nerdyroo.com/type-ii-diabetes-review/
"Type II Diabetes: Review." NerdyRoo, 2 Apr. 2022, nerdyroo.com/type-ii-diabetes-review/.
1. NerdyRoo. "Type II Diabetes: Review." April 2, 2022. https://nerdyroo.com/type-ii-diabetes-review/.
NerdyRoo. "Type II Diabetes: Review." April 2, 2022. https://nerdyroo.com/type-ii-diabetes-review/.
NerdyRoo. 2022. "Type II Diabetes: Review." April 2, 2022. https://nerdyroo.com/type-ii-diabetes-review/.
NerdyRoo. (2022) 'Type II Diabetes: Review'. 2 April.
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Comptella curta är en snäckart som först beskrevs av R. Murdoch 1905.  Comptella curta ingår i släktet Comptella och familjen purpursnäckor. Inga underarter finns listade i Catalogue of Life.

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redpajama_set_name: RedPajamaWikipedia


The 510 is the culmination of Schaefer's 25-years of yacht building expertise and Pininfarina's 80-year history of design and engineering innovation. A tour de force of style, with a bold, elegant look, it makes an impressive statement. Featuring innovative engineering, the 510 also has the performance you'd expect from a thoroughbred. The interior features a modernist esthetic with clean lines and intelligent use of space, making it even roomier.
From the smallest detail, to the largest, nothing has been overlooked on the 510. This penchant for perfection is a way of life at Schaefer Yachts and part of our commitment to provide you the most exhilarating, enjoyable on-water experience possible.
The 510 is boating reimagined by Schaefer Yachts and Pininfarina.


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