2004-02-27 Assigned to MICRON TECHNOLOGY, INC. reassignment MICRON TECHNOLOGY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FARNWORTH, WARREN M., HIATT, WILLIAM M., WATKINS, CHARLES M.
An electrical contact for use with a semiconductor device, a carrier, a probe card, or another substrate includes a dielectric core and a conductive coating on at least a portion thereof. Alternatively, an electrical contact may include a plurality of adjacent, mutually adhered regions comprising conductive material. The electrical contact may be rigid or flexible and resilient. Protective structures for use with flexible resilient contacts prevent deformation of such contacts beyond their elastic limits.
The present invention relates to electrical contacts for use with semiconductor devices. The electrical contacts of the present invention may be used to provide temporary electrical connections as semiconductor devices are being burned in or otherwise tested. More specifically, the present invention relates to electrical contacts which include stereolithographically fabricated portions. The present invention also includes semiconductor devices, carriers, probe cards, and other substrates that employ such electrical contacts. Additionally, the present invention includes methods relating to fabrication of the electrical contacts of the present invention and structures incorporating same.
Numerous types of electrical contacts that are configured to provide temporary communication between the bond pads or other contacts of a semiconductor device and corresponding terminals or other contacts of a test substrate, carrier substrate, or other electronic component have been developed and used in the art.
Several examples of temporary electrical contacts have been developed by FormFactor, Inc., of Livermore, Calif., and are described in U.S. Pat. No. 5,476,211, as well as in other U.S. patents referenced hereinbelow that have been assigned to FormFactor (hereinafter collectively "the FormFactor Patents"). Each of these temporary electrical contacts is a compressible, resilient element which is secured to a bond pad of a semiconductor device. They may include a core and an outer coating, both of which are formed from electrically conductive materials. The core may comprise a relatively soft material, or material which is subject to plastic deformation, while the outer coating may comprise a more rigid material, which imparts the electrical contact with elastic properties. Alternatively, the core may be formed from a more rigid, elastic material, while the coating is formed from a material that enhances adhesion of the electrical contact to a bond pad of a semiconductor device.
The electrical contacts that are described in the FormFactor Patents are represented to be useful for providing temporary electrical connection between the bond pads of a semiconductor device and the contacts of a test or burn-in substrate. They may also provide permanent electrical connections between the bond pads of the semiconductor device and corresponding contacts (i.e., bond pads, terminals, leads, etc.) of another semiconductor device, a carrier, another semiconductor device component, or another electronic device.
The FormFactor Patents teach that wire-bonding apparatus may be used to form the core of an electrical contact of the type described therein, while conventional deposition or plating methods may be used to coat each core with another layer of conductive material. As conventional wire-bonding apparatus are typically configured to form only a single conductive element (e.g., bond wire, electrical contact, or other conductive structure) at a time, and since there may be thousands of bond pads on a substrate (e.g., silicon wafer) upon which numerous semiconductor devices are carried, the electrical contact fabrication processes that are described in the FormFactor Patents may be extremely and undesirably time consuming. Furthermore if, as described in the FormFactor Patents, gold is used to form the cores of numerous electrical contacts, the cost of forming the cores may be extremely and undesirably expensive.
The contacts described in the FormFactor Patents may be used, for example, in probe cards, which are used to establish a temporary connection between a semiconductor device and a test substrate or burn-in substrate. The contacts are positioned at locations that correspond to the locations of corresponding bond pads of the semiconductor device and terminals of the test substrate or burn-in substrate. Thus, the contacts are positioned so as to align between corresponding bond pads and terminals when the probe card is aligned between the semiconductor device and the test substrate or burn-in substrate. The compressibility of such contacts imparts the probe card with dimensional tolerance for the spacing between the semiconductor device and the test substrate or burn-in substrate.
Whether the Form Factor contacts are used with a probe card or another type of semiconductor device component, they may be compressed or deformed beyond their elastic limits, which will render them useless.
Accordingly, processes are needed by which electrical contacts may be more efficiently and cost-effectively fabricated, as are electrical contacts that are formed by such processes, protective structures for preventing damage to such electrical contacts, and semiconductor devices, carriers, probe cards, and other substrates with which such electrical contacts may be assembled.
The present invention, in several embodiments, includes electrical contacts, which are also referred to herein as "contacts" for simplicity, that may be at least partially fabricated by use of stereolithographic fabrication processes, as well as semiconductor devices, carriers, probe cards, and other substrates that include such contacts.
A contact, in an exemplary embodiment, includes a core which is stereolithographically formed or fabricated, as well as a conductive coating on at least a portion of the core. As the core is stereolithographically fabricated, it may include a single layer or multiple layers that are at least partially superimposed, contiguous, and mutually adhered to one another. The contact may be rigid or comprise a compressible, resilient member.
In another exemplary embodiment, a contact according to the present invention includes a conductive core disposed within a stereolithographically fabricated shell. The shell, which may include a single layer or a plurality of superimposed, contiguous, mutually adhered layers, may be formed with a channel extending therethrough. The channel may then be filled with the conductive material of the core, which is exposed at both ends of the shell.
In yet another aspect, the present invention includes methods for fabricating contacts. One exemplary embodiment of a contact fabrication method according to the present invention includes stereolithographically fabricating a core of the contact, then coating at least portions of the core with one or more layers (or sublayers) of conductive material.
A method for fabricating a contact in accordance with teachings of the present invention may include the formation of recesses within a fabrication, or sacrificial, substrate and coating the surfaces of the fabrication substrate with one or more material layers that will facilitate the subsequent release of contacts therefrom. Cores of the contacts may then be formed at the locations of the recesses, with the configuration of the base of each contact being at least partially defined by the recess within which it is formed. Thereafter, the cores may be at least partially coated with one or more layers (or sublayers) of conductive material. Once the contacts have been fabricated, they may be released from the fabrication substrate, which may then be discarded or reused to fabricate more contacts.
In another, similar embodiment of the method, the fabrication substrate may lack recesses.
In another embodiment of contact fabrication method according to the present invention, the foregoing processes may be used to form contacts that incorporate teachings of the present invention directly on the contact pads of a semiconductor device, an interposer, a carrier substrate, or the like.
Accordingly, another aspect of the present invention involves semiconductor device components that include the inventive contacts.
In another aspect, the present invention includes probe cards, which are useful in testing and burning-in semiconductor devices that include the inventive contacts. An exemplary embodiment of a probe card according to the present invention may include contact pads with one or more types of compressible, resilient electrical contacts.
In addition, methods for fabricating probe cards are within the scope of the present invention.
One embodiment of a method for fabricating a probe card may employ the above-described processes for forming contacts and, prior to releasing the contacts from the sacrificial substrate, fabricating a support plate around intermediate sections of the contacts. Accordingly, the base of each contact is located on one side of the support plate and the tip of each contact is located on the other side of the support plate. As such, the support plate is fabricated in such a way that the contacts become trapped thereby. Nonetheless, it may be possible for the contacts to move relative to the support plate, along their lengths and in a direction which is transverse to a plane in which the support plate is located. The resulting structure may comprise a probe card which is useful for testing semiconductor devices with bond pads that are arranged complementarily to the arrangement of contacts on the support plate, as well as with a test or burn-in substrate that includes terminals that are positioned correspondingly to the positions of contacts on the support plate.
Alternatively, in another embodiment, a probe card may be fabricated by forming apertures through a substrate at areas where contacts are to be located. Of course, the apertures are also positioned correspondingly to the locations of corresponding terminals of a test or burn-in substrate with which the probe card is to be used, as well as to the locations of bond pads of a semiconductor device with which the probe card is to be used. Outer shells of the contacts are then formed within the apertures and in such a way as to protrude from the opposite major surfaces of the substrate. A channel may be formed through each outer shell as that outer shell is being fabricated or following fabrication of the outer shell. Conductive material, which may be introduced into the channels or maintained in position within the apertures of the substrate while at least portions of outer shells are being fabricated, extends completely through each outer shell to form a conductive core of the corresponding contact. The conductive material is exposed at each end of the contact to facilitate connection of a bond pad of a semiconductor device with a corresponding terminal of a test substrate or burn-in substrate.
The present invention also includes protective structures that prevent damage to contacts according to the present invention. Such a protective structure may include one or more elements that are located adjacent to regions of contacts that protrude from a substrate, such as a semiconductor device, a carrier, a probe card, or another electronic component. In addition, a protective structure of the present invention is configured to prevent a contact of the present invention from being bent or otherwise deformed beyond its elastic limit (i.e., the limit from which it will not return substantially to its original configuration). Each element of the protective structure may protrude a lesser distance from the substrate than the adjacent protruding portion. Alternatively, if the protective structure is formed from a material that imparts it with some compressibility or flexibility, it may protrude substantially the same distance from the substrate as, or even a greater distance than, the adjacent protruding portion of the contact protrudes from the substrate.
Some embodiments of protective structures according to the present invention include at least one receptacle that laterally surrounds at least a portion of at least one contact. A height of the protective structure (i.e., the distance the protective structure protrudes from the substrate), a distance walls of the receptacle are spaced apart from the contact, or some combination of these dimensions may prevent compression, flexure, or bending or other deformation of the contact beyond its elastic limit.
Other embodiments of protective structures that incorporate teachings of the present invention include at least one element (e.g., a post) that protrudes from a substrate adjacent to a corresponding contact. The at least one protruding element has a height which will prevent compression or flexion of the contact beyond its elastic limit as that contact is biased against a corresponding bond pad, terminal, or other contact element.
FIGS. 39 through 41 are partial perspective views that illustrate exemplary embodiments of protective structures of the present invention, as well as the manner in which they may be positioned relative to contacts and the substrates from which contacts protrude.
FIGS. 1 and 2 illustrate an exemplary embodiment of contact 10 according to the present invention. As shown, contact 10 includes a base 12, an intermediate section 14 adjacent to base 12, and a tip 16, which is adjacent to and located on an end of intermediate section 14 opposite from base 12. Base 12 is configured to make electrical contact with a contact pad or circuit (not shown) of a semiconductor device (not shown) (e.g., a bare or packaged semiconductor die), while tip 16 is configured to establish electrical communication with a contact pad (not shown) of another semiconductor device component (e.g., a test substrate or burn-in substrate, another semiconductor device, a carrier substrate, etc.).
Contact 10 includes a core 18 that may be formed from a dielectric material or a conductive material. A layer of conductive material, which is also referred to herein as a "conductive coating 20," covers at least portions of the exterior surface 19 of core 18 so as to facilitate the transmission of electrical signals along contact 10.
Core 18 may have any suitable configuration known in the art. As such, core 18 may be rigid or flexible. By way of example only, a rigid core 18 may be shaped as a point, a tip, a truncated cone or pyramid, a cup cross, or the like. Examples of flexible core 18 shapes include structures with levered arms, such as those described in the FormFactor Patents, including without limitation U.S. Pat. Nos. 5,476,211, 5,772,451, 5,820,014, 5,832,601, 5,852,871, 5,864,946, 5,884,398, 5,912,046 and 5,998,228, the disclosures of which patents are hereby incorporated herein in their entireties by this reference. Of course, in addition to their configurations, the materials from which cores 18 are formed may also lend to their relative rigidity or flexibility.
Conductive coating 20 may include one or more layers of conductive material suitable for use in forming or coating electrical contacts of semiconductor devices or other electronic components. By way of example only, conductive coating 20 may include one or more of a conductive layer, a barrier layer, and a noble layer.
An exemplary embodiment of the manner in which contact 10 may be fabricated is illustrated in FIGS. 3 through 16.
FIG. 3 depicts a fabrication or sacrificial substrate 100 with a hard mask layer 102 thereon. Substrate 100 may be a sacrificial substrate. Also, substrate 100 may comprise a full or partial semiconductor (e.g., silicon, gallium arsenide, indium phosphide) wafer or a full or partial silicon-on-insulator (SOI) type substrate, such as a silicon-on-ceramic (SOC), silicon-on-glass (SOG), or silicon-on-sapphire (SOS) type substrate. Hard mask layer 102 may comprise silicon nitride or any other material (e.g., silicon oxynitride, silicon oxide, etc.) that is useful for forming a hard mask over substrate 100.
Photoresist 104 is disposed upon a surface 103 of hard mask layer 102 and patterned, as known in the art (e.g., by exposing the same, through a reticle, to one or more appropriate wavelengths of radiation, then developing the same), to form a photomask 106. Photomask 106 includes apertures 108 through which regions of hard mask layer 102 may subsequently be exposed to one or more etchants which are suitable for removing the material of hard mask layer 102. The removal of material from hard mask layer 102 results in the formation of a hard mask 110 with apertures 112 formed therethrough, as shown in FIG. 4.
Turning now to FIG. 5, apertures 112 of hard mask 110 are located and configured to facilitate the subsequent formation of recesses 114 of desired configuration in substrate 110. Of course, recesses 114 may be formed, for example, by etching substrate 100 with one or more suitable etchants (isotropic or anisotropic), as known in the art. Each recess 114, which will facilitate the formation of a base 12 (FIGS. 1 and 2) of a contact 10, has a configuration which will impart base 12 with a desired configuration.
As shown in FIG. 6, another hard mask layer 116 may be formed so as to cover at least the surfaces of recesses 114. Hard mask layer 116 may also cover the remaining portions of hard mask layer 102. Like hard mask layer 102, hard mask layer 116 may be formed from any material which is suitable for use as a hard mask in semiconductor device fabrication processes, including, without limitation, silicon nitride, silicon oxynitride, silicon oxide, and the like. Of course, the processes that are used to form hard mask layer 116 depend upon the type of material to be used.
Once hard mask layer 116 has been formed, a sacrificial layer 118 is formed thereover, as shown in FIG. 7. By way of example only, sacrificial layer 118 may be formed from aluminum by use of sputtering processes. As another example, sacrificial layer 118 may be formed from a photoresist, which may be applied to hard mask layer 116 by spin-on processes, then cured by exposure to one or more appropriate wavelengths of radiation and development with suitable developing chemicals.
Thereafter, as shown in FIG. 7, if sacrificial layer 118 is formed from a metallic material, such as aluminum, an optional plating mask 120 may be formed over sacrificial layer 118. Plating mask 120 is formed from a material that will not be plated as substrate 100 is exposed into electrolytic, electroless, or immersion plating chemicals and conditions. Thus, plating mask 120 is formed over features on substrate 100 that would otherwise be plated upon exposure to plating chemicals and conditions, such as regions of a metallic sacrificial layer 118 that are not located within recesses 114. Features that are to be plated, such as the portions of a metallic sacrificial layer 118 that are located within recesses 114, are exposed through apertures 122 of plating mask 120 to facilitate their subsequent exposure to plating chemicals and conditions. By way of example only, plating mask 120 may comprise a photomask, which is formed by disposing photoresist on sacrificial layer 118, then selectively exposing (e.g., through a reticle) and developing the photoresist to cure the same.
Turning now to FIG. 8, at least a core 18 of a contact 10 (FIGS. 1 and 2) may be formed within each recess 114 by known processes.
For example, as shown in FIGS. 9 and 10A through 10C, core 18 may be formed by stereolithographic processes, such as those described in U.S. Pat. No. 6,524,346 to Farnworth, assigned to the assignee of the present invention and the disclosure of which is hereby incorporated herein in its entirety by this reference. Such processes may be used to form core 18 from a conductive material (e.g., a conductive polymer or conductive photopolymer) or from a dielectric material (e.g., a dielectric photopolymer).
FIG. 9 schematically depicts an example of a stereolithographic apparatus 1000 that may be used to fabricate cores 18, as well as several other components that embody teachings of the present invention. Stereolithographic apparatus 1000 includes a fabrication tank 1100, a material consolidation system 1200, a machine vision system 1300, a cleaning component 1400, and a material reclamation system 1500 that are associated with fabrication tank 1100. The depicted stereolithographic apparatus 1000 also includes a substrate handling system 1600, such as a rotary feed system or linear feed system available from Genmark Automation Inc. of Sunnyvale, Calif., for moving fabrication substrates (e.g., substrates 100) from one system of the stereolithographic apparatus to another. Features of one or more of the foregoing systems may be associated with one or more controllers 1700, such as computer processors or smaller groups of logic circuits, in such a way as to effect their operation in a desired manner.
Controller 1700 may comprise a computer or a computer processor, such as a so-called "microprocessor," which may be programmed to effect a number of different functions. Alternatively, controller 1700 may be programmed to effect a specific set of related functions or even a single function. Each controller 1700 of stereolithographic apparatus 1000 may be associated with a single system thereof or a plurality of systems so as to orchestrate the operation of such systems relative to one another.
Fabrication tank 1100 includes a chamber 1110 which is configured to contain a support system 1130. In turn, support system 1130 is configured to carry one or more substrates 100.
Fabrication tank 1100 may also have a reservoir 1120 associated therewith. Reservoir 1120 may be continuous with chamber 1110. Alternatively, reservoir 1120 may be separate from, but communicate with, chamber 1110 in such a way as to provide unconsolidated material 1126 thereto. Reservoir 1120 is configured to at least partially contain a volume 1124 of unconsolidated material 1126, such as a photoimageable polymer, or "photopolymer," particles of thermoplastic polymer, resin-coated particles, or the like.
Photopolymers believed to be suitable for use with a stereolithography apparatus 1000 according to the present invention include, without limitation, ACCURA® SI 40 HC and AR materials and CIBATOOL SL 5170 and SL 5210 resins for the SLA® 250/50HR and SLA® 500 systems, ACCURA® SI 40 ND material and CIBATOOL SL 5530 resin for the SLA® 5000 and 7000 systems, and CIBATOOL SL 7510 resin for the SLA® 7000 system. The ACCURA® materials are available from 3D Systems, Inc., of Valencia, Calif., while the CIBATOOL resins are available from Ciba Specialty Chemicals Inc. of Bezel, Switzerland.
A material consolidation system 1200 is associated with fabrication tank 1100 in such a way as to direct consolidating energy 1220 into chamber 1110 thereof, toward at least areas of surface 1128 of volume 1124 of unconsolidated material 1126 within reservoir 1120 that are located over substrate 100. Consolidating energy 1220 may comprise, for example, electromagnetic radiation of a selected wavelength or a range of wavelengths, an electron beam, or other suitable energy for consolidating unconsolidated material 1126. Material consolidation system 1200 includes a source 1210 of consolidating energy 1220. If consolidating energy 1220 is focused, source 1210 or a location control element 1212 associated therewith (e.g., a set of galvanometers, including one for x-axis movement and another for y-axis movement) may be configured to direct, or position, consolidating energy 1220 toward a plurality of desired areas of surface 1128. Alternatively, if consolidating energy 1220 remains relatively unfocused, it may be directed generally toward surface 1128 from a single, fixed location or from a plurality of different locations. In any event, operation of source 1210, as well as movement thereof, if any, may be effected under the direction of controller 1700.
When material consolidation system 1200 directs focused consolidating energy 1220 toward surface 1128 of volume 1124 of unconsolidated material 1126, stereolithographic apparatus 1000 may also include a machine vision system 1300. Machine vision system 1300 facilitates the direction of focused consolidating energy 1220 toward desired locations of features on substrate 100. As with material consolidation system 1200, operation of machine vision system 1300 may be proscribed by controller 1700. If any portion of machine vision system 1300, such as a camera 1310 thereof, moves relative to chamber 1110 of fabrication tank 1100, that portion of machine vision system 1300 may be positioned so as provide a clear path to all of the locations of surface 1128 that are located over each substrate 100 within chamber 1110.
Cleaning component 1400 of stereolithographic apparatus 1000 may also operate under the direction of controller 1700. Cleaning component 1400 of stereolithographic apparatus 1000 may be continuous with a chamber 1110 of fabrication tank 1100 or positioned adjacent to fabrication tank 1100. If cleaning component 1400 is continuous with chamber 1110, any unconsolidated material 1126 that remains on a substrate 100 may be removed therefrom prior to introduction of another substrate 100 into chamber 1110.
If cleaning component 1400 is positioned adjacent to fabrication tank 1100, residual unconsolidated material 1126 may be removed from a substrate 100 as substrate 100 is removed from chamber 1110. Alternatively, any unconsolidated material 1126 remaining on substrate 100 may be removed therefrom after substrate 100 has been removed from chamber 1110, in which case the cleaning process may occur as another substrate 100 is positioned within chamber 1110.
Material reclamation system 1500 collects excess unconsolidated material 1126 that has been removed from a substrate 100 by cleaning component 1400, then returns the excess unconsolidated material 1126 to reservoir 1120 associated with fabrication tank 1100.
In use, controller 1700, under control of computer-aided drafting (CAD) or stereolithography (.stl) programming, may orchestrate operation of various components of stereolithographic apparatus 1000 to fabricate cores 18, as well as other features. FIGS. 10A through 10C depict an example of the manner in which cores 18 may be fabricated.
With reference to FIG. 10A, substrate 100 is positioned on a support platen 1112 within chamber 1110 of fabrication tank 1100. As depicted, substrate 100 is submerged within volume 1124 of unconsolidated material 1126 so that unconsolidated material 1126 fills recesses 114. Support platen 1112 is then raised such that the upper surface of substrate 100 is brought to about the same level as (i.e., coplanar with) surface 1128 of volume 1124. Unconsolidated material 1126 within recesses 114 may then be selectively consolidated to form an initial layer 18 a of each core 18 (FIG. 10C).
Next, as shown in FIG. 10B, support platen 1112 may be lowered within chamber 1110 a distance that corresponds substantially to a thickness of a next layer 18 b (FIG. 10C) of each core 18. Unconsolidated material 1126 of substantially the same thickness then flows over substrate 100 and layer 18 a. Thereafter, selected regions of the newly formed layer 1127 b of unconsolidated material 1126 are at least partially consolidated to form or define layer 18 b of core 18 therefrom. Layer 18 b is at least partially superimposed over, contiguous with, and mutually adhered to layer 18 a.
Turning to FIG. 10C, these processes are repeated a number of times until core 18 has been completely formed.
When apparatus such as that shown in FIG. 9 are used to fabricate cores 18, a number of cores 18 may be simultaneously manufactured as a plurality of superimposed contiguous, mutually adhered material layers.
Another example of the manner in which core 18 of a contact 10 of the present invention may be fabricated is shown in FIGS. 11A through 11C. In this example, core 18 may comprise a conductive material (e.g., gold, aluminum, etc.) and may be formed using a dispense element 70, such as a wire-bonding capillary, such as in the manner described in the FormFactor Patents. Alternatively, the material of core 18 may be dispensed with a needle, such as the type used to dispense underfill materials and other packaging materials. Of course, the use of other suitable methods for fabricating cores 18 of contacts 10 according to the present invention are also within the scope of the present invention.
In FIG. 11A, dispense element 70 is positioned over a recess 114 in substrate 100 and a core material introduced into recess 114 to form a first portion 18 a′ of core 18 (FIG. 8), which comprises at least a portion of base 12 of contact 10 (FIGS. 1, 2, and 11B). Thereafter, dispense element 70 may be raised to form a protruding portion 18 b′ of core 18, which forms part of intermediate section 14 of contact 10 (FIGS. 1 and 2). Once intermediate section 14 has been formed, as shown in FIG. 11C, movement of dispense element 70 may be momentarily ceased to facilitate formation of a tip section 18 c′ which is enlarged relative to intermediate section 14. Dispense element 70 may again be raised to complete formation of tip 16 of core 18, as shown in FIG. 11D.
Each core 18 may then be plated or otherwise coated with conductive material to form a conductive coating 20 thereon, as shown in FIG. 12. Conductive coating 20 may be formed by way of known electrolytic, electroless, or immersion plating techniques. If core 18 is formed from a nonmetallic material, such as a dielectric photopolymer, it may be necessary to prepare or treat the surface of core 18, as known in the art, prior to forming conductive coating 20 thereon. Conductive coating 20 may include one or more sublayers or subregions 20 a, 20 b, etc., as shown in FIG. 12A. For example, if core 18 is formed from a dielectric material, conductive coating 20 may include a conductive sublayer 20 a (e.g., a sublayer of copper, aluminum, etc.), as well as a barrier sublayer 20 b (e.g., a sublayer of nickel) and a noble sublayer 20 c (e.g., a sublayer of gold). As another example, if core 18 comprises a conductive material, conductive coating 20 may include a barrier sublayer and a noble sublayer. Plating mask 120 prevents other features on substrate 100 from being plated.
As shown in FIGS. 13A through 15, a support plate 130 (FIG. 15) may be formed around intermediate sections 14 of contacts 10. By way of example only, known stereolithographic processes may be used to fabricate support plate 130, such as with the apparatus shown in and described with respect to FIG. 9.
In FIG. 13A, substrate 100, along with contacts 10 and all of the other features that have been formed therein and thereon, may be partially submerged beneath a surface 202 of a volume 200 of photopolymer, with tips 16 and portions of intermediate sections 14 of contacts 10 protruding above surface 202. Surface 202 may then be exposed to radiation of one or more wavelengths that are appropriate for at least partially polymerizing, or consolidating, the photopolymer at surface 202 to form a layer 132 a of support plate 130 (FIG. 15). Preferably, such exposure is effected with focused radiation 204 (e.g., a laser beam), which has a focal point that facilitates control of a depth T1 to which the photopolymer is at least partially consolidated and, thus, a thickness of layer 132 a. Further, by angling an energy beam used to expose surface 202 to radiation from a perpendicular orientation to expose the surface 202 under tip 16, such consolidation may be effected so that at least portions of the outer peripheries of base 12 and tip 16 are superimposed over one or more portions of layer 132 a to trap intermediate section 14 of contact 10 within layer 132 a.
Once layer 132 a has been formed, substrate 100 and layer 132 a may be submerged within volume 200 of photopolymer a distance which corresponds to a thickness T2 of a next-higher layer 132 b of support plate 130 (FIG. 15), as shown in FIG. 13B. The process described in reference to FIG. 13A may then be repeated to form layer 132 b of support plate 130, with layer 132 b being at least partially superimposed over, contiguous with, and mutually adhered to the previously formed layer 132 a. This process may be repeated until a support plate 130 of desired thickness has been formed.
After each layer 132 a, 132 b, etc. of support plate 130 has been formed, substrate 100, contacts 10, and support plate 130 may be removed from volume 200 of photopolymer, as shown in FIG. 14. Thereafter, the material of layers 132 a, 132 b, etc. may be further consolidated by exposing the same to energy or radiation (not shown), such as nonfocused radiation of one or more curing wavelengths, heat, or another suitable form of energy or radiation, as known in the art. Once fabrication of support plate 130 is complete, as shown in FIG. 15, support plate 130 and contacts 10 extending therethrough form a probe card 30 (see also FIG. 19). Optionally, support plate 130 may be formed as a large panel and severed after fabrication thereof into smaller segments to form a plurality of probe cards 30.
Turning now to FIG. 16, an example of the manner in which contacts 10 may be freed from substrate 100 is shown. Sacrificial layer 118 (FIG. 15) and, optionally, plating mask 120 (FIG. 15) may be removed by known processes. If sacrificial layer 118 is formed from aluminum, one or more suitable etchants (e.g., tetramethyl ammonium hydroxide (TMAH), potassium hydroxide (KOH), sodium hydroxide (NaOH), etc., or any combination thereof) may be used to dissolve or otherwise remove the aluminum. If a photoresist was used to form sacrificial layer 118, sacrificial layer 118 may be exposed to a resist strip suitable for dissolving or otherwise removing the photoresist. When sacrificial layer 118 is removed, overlying structures are "lifted-off" of substrate 100. Thus, bases 12 of contacts 10 are no longer anchored within recesses 114 and may be removed therefrom. Substrate 100 may then be discarded. Alternatively, substrate 100 may again be used in the processes described with reference to FIGS. 6 through 16 to form additional contacts 10.
As an alternative to the process shown in FIGS. 3 through 16, Contacts 10 according to the present invention may be fabricated without forming recesses 114 in a sacrificial substrate 100. Instead, as shown in FIGS. 3A, 6A, and 7A, substrate 100 may merely be coated with a hard mask layer 102 (FIG. 3A), a sacrificial layer 118 formed thereover (FIG. 6A), and plating mask 120 formed over selected regions (i.e., those where contacts 10 are not to be formed) of sacrificial layer 118 (FIG. 7A). Contacts 10 may then be formed by the processes that have been described in reference to FIGS. 8 through 16. Of course, when nonstereolithographic processes are used to form cores 18, the areas of cores 18 which are formed on exposed regions of sacrificial layer 118 may be flat, or planar. In addition, the shape of each core 18, at base 12 of contact 10, may be limited by the process and materials that are used to form that core 18.
Referring now to FIGS. 17 and 18, if the substrate upon which contacts 10 are to be fabricated is not a fabrication or sacrificial substrate but, rather, a substrate 100′ that carries one or more semiconductor devices 208 or other semiconductor device components (e.g., interposers), contacts 10 may instead be formed directly on contact pads 210 of the semiconductor devices 208 or other semiconductor device components, such as by the above-described processes. By way of example only, the processes that are depicted in and described with reference to FIGS. 7 through 12 may be used to form contacts 10 directly on contact pads 210 of one or more semiconductor devices 208 or other semiconductor device components. Of course, as shown in FIG. 18, if a core 18 of each contact 10 comprises a dielectric material, conductive coating 20 must provide a conductive path from the corresponding contact pad 210, along base 12 and intermediate section 14 of contact 10, and onto tip 16 thereof.
The present invention also includes probe cards, as well as methods for fabricating probe cards. As depicted in FIG. 19 a probe card 30 may be positioned between one or more semiconductor devices 40 and a test or burn-in substrate 50. Contacts 10 of probe card 30 are located so as to align between bond pads 42 of each semiconductor device 40 and corresponding terminals 52 of a test or burn-in substrate 50 which is configured for use with semiconductor device 40. Each contact 10 of probe card 30 is configured to temporarily establish electrical communication between its corresponding bond pad 42 and terminal 52 as one or both of semiconductor device 40 and test or burn-in substrate 50 is biased toward the other. In this fashion, probe card 30 facilitates the testing or burning-in of one or more semiconductor devices 40 with appropriate test or burn-in equipment (not shown) with which test or burn-in substrate 50 has been assembled.
One example of a probe card 30 according to the present invention is shown in FIG. 15. Another example of probe card 30′ that incorporates teachings of the present invention is depicted in FIG. 20. In addition to including contacts 10, 10′, a probe card 30, 30′ according to the present invention may include circuit traces (not shown) on one or both sides thereof. Such circuit traces may be fabricated by known processes (e.g., mask and etch processes, use of stereolithography techniques, a so-called micropen and conductive ink, etc.).
FIGS. 21 through 26 illustrate one embodiment of a method for fabricating probe card 30′, while FIGS. 32 through 38 depict another embodiment of a method by which probe card 30′ may be fabricated.
As shown in FIG. 20, probe card 30′ includes a support plate 130′ with major surfaces 133′ and 134′ that face opposite directions. Apertures 131′ (FIG. 22) are formed through support plate 130′ at locations which correspond to the locations of bond pads 42 (FIG. 19) and terminals 52 (FIG. 19), respectively, on semiconductor devices 40 (FIG. 19) and test or burn-in substrates 50 (FIG. 19) with which probe card 30′ is configured to be used. A contact 10′ extends through each aperture 131′ of support plate 130′, with one end 23′ that protrudes from surface 133′ and another end 24′ that protrudes from surface 134′.
With reference to FIG. 26, each contact 10′ includes an outer shell 20′ which includes a channel 21′ extending substantially centrally through the length, or height, thereof. As shown, channel 21′ may contain a quantity of conductive material, which forms a conductive core 18′ that extends through the entire length of outer shell 20′.
Outer shell 20′ may be rigid or flexible, depending at least in part upon the configuration thereof and the materials that are used to form the same. Also, the material or materials from which outer shell 20′ is fabricated may be dielectric or electrically conductive. As illustrated, outer shell 20′ includes two collars 25′ and 26′, which extend radially from the remainder (e.g., a body 22′) of outer shell 20′ and are positioned so as to be located adjacent to opposite surfaces 133′ and 134′, respectively, of support plate 130′ (FIG. 20).
As depicted, the ends of conductive core 18′ may be enlarged at ends 23′ and 24′ of contact 10′ and extend onto portions of outer shell 20′ that are located at ends 23′ and 24′. A base 12′ of each core 18′ and, thus, of contact 10′ of which core 18′ is a part establishes electrical communication with a corresponding terminal 52 of test or burn-in substrate 50 (FIG. 19), while a tip 16′ of each contact 10′ establishes electrical communication with a corresponding bond pad 42 of a semiconductor device 40 (FIG. 19) to be tested or burned-in. While the connection between base 12′ and terminal 52 may be temporary (e.g., by biasing base 12′ against terminal 52) or permanent (e.g., by bonding base 12′ to terminal 52), it is currently preferred that the connection between tip 16′ and bond pad 42 be temporary (e.g., by biasing tip 16′ against bond pad 42).
Turning now to FIGS. 21 through 26, an exemplary method for fabricating probe card 30′ and contacts 10′ thereof is depicted.
In FIG. 21, a substrate 300 is provided. Substrate 300 may be a substantially planar member, as depicted, or have any other suitable shape. Moreover, substrate 300 may be formed from a variety of suitable materials, including, without limitation, polymers, metals, dielectric materials (e.g., glass, ceramic, etc.), semiconductor materials (e.g., silicon, gallium arsenide, indium phosphide, etc.), or any combination of the foregoing. Specific examples of structures that may be employed as substrate 300 include full or partial wafers of semiconductor material and full or partial SOI-type substrates.
Turning to FIG. 22, apertures 310 are formed through substrate 300 at locations where contacts 10′ (FIG. 20) are to be located. Apertures 310 may be formed by any process which is suitable for use with the material of substrate 300. By way of example only, apertures 310 may be formed through substrate 300 by known drilling techniques (e.g., laser drilling, mechanical drilling, etc.). Alternatively, mask and etch processes may be used to form apertures 310 through desired locations of substrate 300.
If substrate 300 comprises a conductive or semiconductive material, surfaces 312 of apertures 310 may be coated with a layer 314 of dielectric material, as shown in FIG. 23. Layer 314 of dielectric material may likewise extend onto all or part of surfaces 302 and 304 of substrate 300. In addition to passivating surfaces 312, 302, 304, layer 314 may facilitate adhesion of subsequently formed structures to substrate 300. By way of example only, layer 314 may comprise silicon oxide, silicon nitride, or silicon oxynitride and may be formed by any suitable process known in the art (e.g., silicon oxide may be grown, spun-on, or deposited; silicon nitride and silicon oxynitride may be deposited).
As shown in FIG. 24, at least portions of contacts may be formed within at least some apertures 310 of substrate 300. For example and as illustrated in FIG. 24, an outer shell 20′ of a contact 10′ (FIG. 26) may be formed within each aperture 310. Outer shell 20′ may comprise a dielectric material (e.g., a dielectric photopolymer) and may be fabricated by known stereolithography processes, such as those described above in reference to FIGS. 13A through 15. As outer shell 20′ may include collars 25′ and 26′ that are to be positioned adjacent opposite surfaces 302 and 304 of substrate 300, the portion 20 a′ of outer shell 20′ that protrudes from surface 302 may be fabricated, then substrate 300 flipped, or inverted, so that the remainder 20 b′ of outer shell 20′, which protrudes from surface 304 of substrate 300, may be fabricated.
Outer shell 20′ may be fabricated with a channel 21′ extending therethrough, or channel 21′ may be subsequently formed therethrough by known processes (e.g., with a laser drill, mechanical drill, etc.). Optionally, channel 21′ may be formed during the fabrication of outer shell 20′, then bored to increase one or more cross-sectional dimensions (e.g., radius and circumference) thereof.
Next, as depicted in FIG. 25, conductive material 316 is introduced into channel 21′. By way of example only, needle-dispense processes may be used to introduce conductive material 316 into channel 21′ or conductive material 316 may be introduced into channel 21′ using a pressurized wire-bonding capillary. If needle dispense processes are used, a conductive or conductor-filled polymer may be introduced into channel 21′, then cured by suitable processes (e.g., exposure to an appropriate wavelength of radiation, heat, etc.). When a wire-bonding capillary is used to force, under positive pressure, a molten metal (e.g., gold, copper, aluminum, etc.) into channel 21′, the metal will harden upon being cooled. Of course, the material from which outer shell 20′ is formed should be able to withstand the temperature of the molten metal of conductive material 316, as well as substantially maintain its structural integrity when exposed to the molten metal.
As a result of introducing conductive material 316 into channel 21′, a conductive element 320 is formed therein. Conductive element 320 includes a first end 323, which is exposed at and may protrude from end 23′ of contact 10′, and a second end 324, which is exposed at and may protrude from end 24′ of contact 10′.
FIG. 26 depicts the formation of a cap 325, 326 at each end 23′, 24′ of contact 10′ from ends 323 and 324 (FIG. 25), respectively, of conductive element 320, which may complete the formation of core 18′ of contact 10′. When conductive element 320 comprises a conductive or conductor-filled polymer, caps 325 and 326 may be formed prior to curing or solidifying conductive material 316 (FIG. 25), as the at least partially liquid conductive material 316 flows onto ends of outer shell 20′. If conductive material 316 comprises metal, caps 325 and 326 may be formed by heating ends 323 and 324 of conductive element 320 to a molten state and permitting them to flow onto the ends of outer shell 20′.
Additionally, as shown in FIGS. 29 and 30, one or both ends 323, 324 of conductive element 320 (FIG. 26) may be drawn, by known techniques, so as to form an extension (e.g., extension 328 of FIG. 29 or extension 328′ of FIG. 30) from core 18′ (FIG. 26), which extension protrudes from outer shell 20′, 20″ of contact 10′, 10″, repectively. Alternatively, one or more extensions (e.g., extensions 328, 328′) may be formed separately from core 18′. By way of example only, a wire-bonding capillary may be used to draw or form each extension.
As an alternative to the use of dielectric material to form an outer shell 20′, electrically conductive contacts 10′″ may be formed within at least some apertures 310 of substrate 300, as shown in FIG. 24. As an example, stereolithography processes, such as those described above in reference to FIGS. 13A through 15, may be used to form contacts 10 from conductive material, such as a conductive or conductor-filled photopolymer.
As another alternative, thermoplastic material may be sprayed, or "jetted," onto substrate 300 layer-by-layer. Examples of such processes are described in U.S. Pat. Nos. 6,532,394, 6,508,971, 6,492,651, 6,490,496, 6,406,531, 6,352,668, 6,347,257, 6,305,769, 6,270,335, 6,193,923, 6,133,355, 5,340,433, 5,260,009, 5,216,616, 5,141,680, 5,134,569, 5,121,329, and 4,665,492, the disclosures of each of which are hereby incorporated herein in their entireties by this reference. Additional examples of such processes are described in Grimm, Todd, "Stereolithography, Selective Laser Sintering and PolyJet™: Evaluating and Applying the Right Technology," Pamphlet produced by Accelerated Technologies, Inc. of Austin, Tex. (2002), and in the pamphlet entitled "PolyJet 2nd Generation Technology," which was produced by Objet Geometries Ltd. of Rehovot, Israel, in 2003, the disclosures of both of which are hereby incorporated herein, in their entireties, by this reference.
Of course, when a conductive contact 10″ is formed directly within one or more apertures 310 of substrate 300, it may not be necessary to form a core of another conductive material therein, although doing so (e.g., by the processes described above with reference to FIGS. 24 through 26) is within the scope of the present invention.
FIGS. 27 through 31 illustrate examples of different configurations of contacts (e.g., contacts 10′, 10″) according to the present invention.
Another exemplary embodiment of a method for fabricating a probe card 30′ (FIG. 20) in accordance with teachings of the present invention is depicted in FIGS. 32 through 38.
In FIG. 32, conductive elements 418 (only one being shown) are formed on a substrate 400. Each conductive element 418 is a substantially linear structure which protrudes from substrate 400 and which is secured to a surface 402 thereof with a bonding joint 416. Any suitable, known process may be used to form conductive elements 418. For example, and not to limit the scope of the present invention, bonding joints 416 and conductive elements 418 may be formed with a wire-bonding capillary.
Next, as shown in FIG. 33, a portion 20 a′ of an outer shell 20′ (FIG. 26) is formed around an intermediate section 419 of each conductive element 418. Portions 20 a′ may be formed by stereolithography processes, such as those which have been described above in reference to FIGS. 13 through 15.
As depicted, each portion 20 a′ includes a protruding element 27′, a collar 25′, and a tapered alignment element 29′. Protruding element 27′ is an elongate member which may be cylindrical in shape. Collar 25′ is located adjacent to protruding element 27′ and extends outwardly (e.g., radially) therefrom. Alignment element 29′, which may be frustoconical in shape, is positioned adjacent to collar 25′ and on an opposite side thereof from protruding element 27′. Although alignment element 29′ is depicted as abutting collar 25′, it may be spaced apart therefrom by a section of portion 20 a′ which has a reduced cross section relative to collar 25′ and alignment element 29′.
Thereafter, as illustrated in FIG. 34, a substrate 300 through which apertures 310 have already been formed (see, e.g., FIG. 22 and accompanying text) is positioned over substrate 400, with apertures 310 being aligned over conductive elements 418 and portions 20 a′ of outer shells 20′ that have been formed thereon. Such alignment may be effected in any suitable manner known in the art, e.g., mechanically, optically, or otherwise.
Once substrate 300 has been properly positioned, with alignment elements 29′ of each portion 20 a′ being at least partially disposed within a corresponding aperture 310 and a portion of each conductive element 418 extending through the corresponding aperture 310 of substrate 300, a remainder 20 b′ of each outer shell 20′ may be fabricated, as illustrated in FIG. 35. As shown, each remainder 20 b′ extends partially into aperture 310 and includes features, such as the depicted collar 26′ and protruding element 28′, which protrude from surface 302 of substrate 300. By way of example only, known stereolithography processes, such as those described with respect to FIGS. 13 through 15, may be used to form each remainder 20 b′ and, thus, to complete the formation of each corresponding outer shell 20′.
FIG. 36 shows that, if desired, conductive elements 418 may be bent. Such bending may be effected, for example, by moving one or both of substrate 300 and substrate 400 relative to the other, as indicated by arrows 350, 352.
Once outer shells 20′ have been fabricated, as depicted in FIG. 37, bonding joints 416 may be removed from substrate 400 (e.g., by heating at least bonding joints 416) or conductive elements 418 severed (e.g., cut) to facilitate the removal of substrate 400 from the remainder of the assembly.
As FIG. 38 illustrates, a cap 425, 426 may then be formed at each end 23′, 24′ of contact 10′ from ends 423 and 424 (FIG. 36), respectively, of conductive element 418, which may complete the formation of core 18′ of contact 10′. As an example of the manner in which caps 425 and 426 may be formed, ends 423 and 424 of conductive element 418 may be heated to a molten state and permitted to flow onto the ends of outer shell 20′.
Optionally, one or both ends 323, 324 of conductive element 320 may be drawn, by known techniques, in such a way as to form an extension (e.g., extension 328 of FIG. 29 or extension 328′ of FIG. 30) from core 18′, which extension protrudes from outer shell 20′ of contact 10′. Alternatively, one or more extensions may be formed separately from core 18′. By way of example only, a wire-bonding capillary may be used to draw or form each extension.
At some point during the process that has been described with reference to FIGS. 32 through 38, and with returned reference to FIG. 36, a layer 420 of conductive material may be formed on exposed portions of each conductive element 418. Layer 420 may comprise a single layer or a plurality of sublayers (e.g., a barrier sublayer, a noble sublayer, etc.), each of which may, by way of nonlimiting example, be formed by way of known plating processes. Layer 420 may impart some rigidity to conductive element 418, providing some resilience when conductive element 418 is compressed or otherwise flexed. Alternatively, or additionally, layer 420 may prevent oxidation or corrosion of conductive element 418.
Such plating may be effected just after the formation of conductive elements 418 (FIG. 32), following the bending, if any, of conductive elements 418 (FIG. 35), or at any other suitable point during the fabrication of a probe card 30 in accordance with the processes of FIGS. 32 through 37.
In another aspect, the present invention includes protective structures that are configured to prevent damage to a contact (e.g., contact 10, 10′) of the present invention. FIGS. 39 through 41 depict exemplary embodiments of protective structures 500, 500′, and 500″, respectively, that incorporate teachings of the present invention.
The embodiment of protective structure 500 shown in FIG. 39 comprises a material layer 501 that is secured to a surface of a substrate, illustrated merely as an example as being a probe card 30. Contacts 10 may protrude a greater distance from a surface 32 of probe card 30 than the distance that layer 501 protrudes from surface 32. As shown, a plurality of receptacles 510 are formed in material layer 501, within which portions of contacts 10 are located. Surfaces 512 of each receptacle 510 may be spaced apart from the contact 10 therein so as to permit some compression or flexion of contact 10, while preventing contact 10 from being compressed or flexed beyond its elastic limit, which is largely dependent upon the material or materials from which contact 10 has been fabricated. The thickness of material layer 501 when subjected to compressive loading may also prevent each contact 10 from being compressed or flexed beyond its elastic limit.
Another exemplary embodiment of protective structure 500′ is shown in FIG. 40. Each protective structure 500′ is a cup-shaped structure that includes a wall 501′ and a single receptacle 510′ formed within the interior of wall 501′. As depicted, protective structure 500′ is located on a surface of a substrate (a semiconductor device 40 in the depicted example), with receptacle 510′ laterally surrounding at least a portion of a contact 10 that protrudes from a bond pad 42 of semiconductor device 40. As with protective structure 500, surfaces 512′ of receptacle 510′ may be spaced apart from the contact 10 therein so as to permit some compression or flexion of contact 10, while preventing contact 10 from being compressed or flexed beyond its elastic limit. The distance each protective structure 500′ protrudes from the substrate when subjected to compressive loading may also prevent each contact 10 from being compressed or flexed beyond its elastic limit.
FIG. 41 illustrates yet another exemplary embodiment of protective structure 500″. Each protective structure 500″ comprises a post-like structure or other element which protrudes from a surface of a substrate, such as the depicted carrier substrate 60 (e.g., an interposer, circuit board, etc.) at a location which is adjacent to a terminal 62 of carrier substrate 60 and, thus, proximate to the location at which a contact 10 protrudes from carrier substrate 60. The heights of protective structures 500″ are configured to prevent contacts 10 from being compressed or flexed under compressive forces beyond their elastic limits.
Each of the foregoing embodiments of protective structures 500, 500′, 500″, as well as other embodiments of protective structures that are within the scope of the present invention, may be fabricated by stereolithography processes, such as those described herein with reference to FIGS. 13A through 15. As such, a protective structure of the present invention may include a plurality of at least partially superimposed, contiguous, mutually adhered layers of material. All of the layers may be formed from the same material, or a variety of materials (e.g., materials with different degrees of compressibility or flexibility and resilience) may be used, depending at least in part upon the desired properties of the protective structure. Of course, other suitable techniques may also be used to form protective structures that incorporate teachings of the present invention.
Protective structures according to the present invention may be fabricated directly on a substrate, or fabricated separately from the substrate, then secured thereto (e.g., with a suitable adhesive material).
Although the foregoing description contains many specifics, these should not be construed as limiting the scope of the present invention, but merely as providing illustrations of some of the presently preferred embodiments. Similarly, other embodiments of the invention may be devised which do not depart from the spirit or scope of the present invention. Moreover, features from different embodiments of the invention may be employed in combination. The scope of the invention is, therefore, indicated and limited only by the appended claims and their legal equivalents, rather than by the foregoing description. All additions, deletions, and modifications to the invention, as disclosed herein, which fall within the meaning and scope of the claims are to be embraced thereby.
a conductive coating on at least a portion of the core.
2. The contact of claim 1, wherein the core is flexible and resilient.
3. The contact of claim 1, wherein the core is substantially rigid.
4. The contact of claim 1, wherein the core comprises a plurality of adjacent, mutually adhered regions of the polymer.
5. The contact of claim 1, wherein the polymer comprises a photoimagable polymer.
6. The contact of claim 1, wherein the core includes a base, an intermediate section, and a contact tip.
7. The contact of claim 6, wherein the intermediate section is flexible and resilient.
8. The contact of claim 6, wherein the base is configured to be secured to the semiconductor device component.
9. The contact of claim 6, wherein the conductive coating covers at least a portion of the contact tip and at least a portion of the intermediate section.
10. The contact of claim 9, wherein the conductive coating substantially covers the contact tip.
11. The contact of claim 9, wherein the contact tip is configured to electrically communicate with another contact of another semiconductor device component.
12. The contact of claim 9, wherein the conductive coating also covers at least a portion of the base.
13. The contact of claim 12, wherein a portion of the conductive coating on the base is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
14. The contact of claim 9, wherein the portion of the conductive coating on the intermediate section is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
15. The contact of claim 6, wherein the contact tip is enlarged relative to the intermediate section.
16. The contact of claim 1, wherein the conductive coating substantially covers the core.
17. The contact of claim 1, wherein the conductive coating comprises a plurality of layers of conductive material.
18. The contact of claim 1, wherein the core protrudes from a contact pad of the semiconductor device component.
19. The contact of claim 1, wherein the core comprises a filament.
21. The contact of claim 20, wherein the core is flexible and resilient.
22. The contact of claim 20, wherein the core is substantially rigid.
23. The contact of claim 20, wherein the core comprises a plurality of adjacent, mutually adhered regions comprising the dielectric material.
24. The contact of claim 23, wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.
25. The contact of claim 20, wherein the dielectric material comprises a polymer.
26. The contact of claim 25, wherein the polymer comprises a photoimagable polymer.
27. The contact of claim 20, wherein the core includes a base, an intermediate section, and a contact tip.
28. The contact of claim 27, wherein the intermediate section is flexible and resilient.
29. The contact of claim 27, wherein the base is configured to be secured to the semiconductor device component.
30. The contact of claim 27, wherein the conductive coating covers at least a portion of the contact tip and at least a portion of the intermediate section.
31. The contact of claim 30, wherein the conductive coating substantially covers the contact tip.
32. The contact of claim 31, wherein the contact tip is configured to electrically communicate with a contact of another semiconductor device component.
33. The contact of claim 30, wherein the conductive coating also covers at least a portion of the base.
34. The contact of claim 33, wherein a portion of the conductive coating on the base is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
35. The contact of claim 30, wherein the portion of the conductive coating on the intermediate section is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
36. The contact of claim 27, wherein the contact tip is enlarged relative to the intermediate section.
37. The contact of claim 20, wherein the conductive coating substantially covers the core.
38. The contact of claim 20, wherein the conductive coating comprises a plurality of contiguous regions of conductive material.
39. The contact of claim 38, wherein the plurality of contiguous regions comprises a plurality of layers.
40. The contact of claim 20, wherein the core is configured to protrude from a contact pad of the semiconductor device component.
42. The contact of claim 41, wherein the core is flexible and resilient.
43. The contact of claim 41, wherein the core is substantially rigid.
44. The contact of claim 41, wherein the core comprises a plurality of adjacent, mutually adhered regions comprising the dielectric material.
45. The contact of claim 44, wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.
46. The contact of claim 41, wherein the dielectric material comprises a polymer.
47. The contact of claim 46, wherein the polymer comprises a photoimagable polymer.
48. The contact of claim 41, wherein the core includes a base, an intermediate section, and a contact tip.
49. The contact of claim 48, wherein the intermediate section is flexible and resilient.
50. The contact of claim 48, wherein the base is configured to be secured to the semiconductor device component.
51. The contact of claim 48, wherein the conductive coating covers at least a portion of the contact tip and at least a portion of the intermediate section.
52. The contact of claim 51, wherein the conductive coating substantially covers the contact tip.
53. The contact of claim 52, wherein the contact tip is configured to electrically communicate with a contact of another semiconductor device component.
54. The contact of claim 51, wherein the conductive coating also covers at least a portion of the base.
55. The contact of claim 54, wherein a portion of the conductive coating on the base is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
56. The contact of claim 51, wherein the portion of the conductive coating on the intermediate section is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
57. The contact of claim 48, wherein the contact tip is enlarged relative to the intermediate section.
58. The contact of claim 41, wherein the conductive coating substantially covers the core.
59. The contact of claim 41, wherein the conductive coating comprises a plurality of contiguous regions of conductive material.
60. The contact of claim 59, wherein the plurality of contiguous regions comprises a plurality of layers.
"PolyJet 2<SUP>nd </SUP>Generation Technology", Objet, www2objet.com, 4 pages.
Todd Grim, "Stereolithography, Selective Laser Sintering and PolyJet(TM): Evaluating and Applying the Right Technology", Accelerated Technologies, Inc., www.atirapid.com, 2002, pp. 1-8.


The Bachelor of Science with a major in kinesiology and a concentration in exercise science provides the necessary theoretical knowledge and practical competencies to prepare students to be effective and competitive in clinical, corporate, and fitness settings. The program is also designed to prepare students for professional organization certifications and post-graduate studies in exercise science or other health-related disciplines.
The exercise science concentration area is not an open option for a degree (i.e., acceptance by UNG as well as program application and approved admission are both required). Students wishing to enter the program must submit a complete application packet for admission to the UNG College of Education.
Applications for fall 2018 admittance will only be accepted December 3-7, 2018 (No early or late applications will be accepted).
After the current fall semester review, the student's overall GPA must be 2.75 or higher. Any applications with an overall GPA below a 2.75 at the end of the fall semester review will not be considered.
All admission criteria, requirements, forms, and pertinent information are outlined below.
All students entering into the exercise science concentration area must be accepted by UNG as well as the College of Education before beginning any professionally-based coursework. A completed application must be submitted typically during the sophomore year and approved prior to admission to the exercise science concentration area. Also, an unofficial copy of your current college transcript, your resume, and a letter of intent must be included with the application. Admission is required prior to enrollment in the following upper division classes: SPMD 3200, KINS 3350, 3380, 3380L, 4420, 4425, 4435, 4470, 4480, and 4490.
Dahlonega Campus: Sarah Snyder, University of North Georgia, Exercise Science Admissions, Room 106E Dunlap Hall, Dahlonega, Georgia 30597.
Gainesville Campus: Sheree Gravenhorst, University of North Georgia, Exercise Science Admissions, Nesbitt 5168, Gainesville, Georgia 30566.
If you have any questions concerning the application process, you can contact Sarah Snyder, the admissions coordinator for the College of Education at 706-867-3210 or Sarah.Snyder@ung.edu.
Once a year in December, complete applications will be accepted for the following fall semester admittance. Candidates whose applications have met all admissions requirements will be contacted in the spring semester to schedule an interview with the Exercise Science Admissions Committee. After all interviews are completed, the admissions committee will select the most qualified students for admittance into the program. All applicants will receive a letter indicating their status, whether it be accepted, provisionally accepted, or denied. Qualified students not selected for admittance will be ranked and placed on a waiting list. Provisionally accepted students that fail to meet the qualifications will have their acceptance letter withdrawn and the first qualified applicant on the waiting list will be considered for admittance.
maintenance of an overall grade point average of 2.75 as required for concentration area admission.
Students may be placed on probation and/or dismissed if they fail to comply with the standards for retention in the exercise science concentration area. Two consecutive semesters or sessions on probation will result in dismissal from the exercise science concentration area. In addition, a student will not be allowed to register for KINS 4490 (Internship: Exercise Science) until the standards for retention in the exercise science concentration area are met. Due to the sensitive nature of working with both symptomatic and asymptomatic individuals in various clinical settings, this policy will be strictly enforced.
Students denied admission to or continuance in the exercise science concentration area may appeal the decision. Appeals must be made in writing to the dean of the College of Education and should clearly state why an exception should be made. A student must have a minimum overall grade point average of 2.75 to be considered for admission. The dean of the College of Education will appoint an ad hoc committee to review the student's appeal. The dean's decision shall be final.
Gain practical experience in your chosen field.
Improve personal and professional skills.
Obtain additional references and contacts (e.g., networking).
Enhance your opportunity with a company in obtaining employment.
Work directly under an established individual in a position of leadership.
Determine if your area of interest is a viable career option prior to making a long-term commitment.
Admission to the exercise science emphasis area and meeting of retention standards are mandatory.
A minimum overall grade point average (GPA) of 2.75 is required.
Completion of all kinesiology (exercise science) course requirements with at least a grade of "C" in all major courses.
Attend a mandatory orientation meeting to receive a packet of materials about the policies and procedures in securing an approved internship site. Interns cannot be employed and/or a present member of the potential internship site.
Complete a minimum of 360 active hours for 12 semester hours of college credit.
Receive two formal evaluations of your performance from your site supervisor(s).
Prepare and submit a series of weekly reports and forms for evaluation.
Develop at least one special project during your internship experience (e.g., research paper, etc.).
Prepare an internship notebook(s) consisting of an organized compilation of your personal work and responsibilities, worksite policies and procedures, handouts, projects, conference notes, etc.
Adhere to the administrative policies, standards, and practices of the company or agency.
Conduct yourself in an exemplary manner as a representative for UNG and Kinesiology department.
Have an active UNG e-mail account for official communications during the internship period.
Hold a current CPR & Basic First Aid Certification by the American Red Cross or the American Heart Association as well as secure student professional liability insurance.
Complete a background check through Castle Branch with package code NB13.
Other potential site requirements may include a physical examination, appropriate immunizations, drug screening, and a more extensive criminal background check.
Specific questions concerning the Exercise Science Internship program should be directed to the internship coordinator, Mrs. Ashley Bruce, at (706) 867-3077 or by e-mail at ashley.bruce@ung.edu.
What can you do with a career in Exercise Science?
Careers in the exercise science area have dramatically increased in recent years. With such diversity in career opportunities, professional development has become an even more important consideration for meeting future goals. The following information hopefully will assist you in further defining your career goals.
Some of these professions require additional education and/or certifications. Students may be required to take prerequisite courses or to secure a master's or doctoral degree in a specific discipline.
There is also a variety of certification options available to those in exercise science.


text:
St Augustine's Catholic Church
Mossman, QLD 4873
Church Name: St Augustine's Catholic Church
Denomination: Catholic Church in Australia
Street Address: 24 Grogan St, Mossman QLD 4873, Australia
Suburb: Mossman
A plaque records: To the Glory of Almighty God - and in honour of St Augustine - this church - was solemnly blessed by - The Most Rev John A Torpie DD - Bishop of Cairns - on the 30th January, 1977 - E J Crane, Parish Priest.
The first Catholic Church building in Mossman (Junction Road), was opened in November or December 1905, but was destroyed by a cyclone on 16/3/1911 (as was St Mary's Catholic Church bulding in Port Douglas).
The second church building was opened on 11/2/1912.
The original site was too small for a parish school, so in 1929 the Grogan Street site was bought. A new Church-School building was opened on 29/4/1934.
The present church building was opened on 30/1/1977. Note the building is hexagonal in shape not square.
More historical information/photographs of the churches/congregations are invited. Photographs uploaded 25/8/2018.
Note: Photograph attribution/source - http://www.catholicdouglas.org.au/d/church-moss.html
Last Updated: Saturday 25th August, 2018

redpajama_set_name: RedPajamaCommonCrawl


I hear complaints all the time about how insensitive, inconsiderate, and selfish people are, and how it seems to be getting worse. I don't know if it's true. Certainly many are like that. Many more, I suspect, make up a vast neutral middle ground — just minding their own business, staying out of trouble, and leaving others alone. And then, there are the few at the other end, the ones who observe and feel more than their share and who go out of their way to care about their fellow human beings. You, my dear BSB, are part of that small and special group that has assumed the task of trying to balance out the heartless and the apathetic. It's tempting to say that the world needs more people like you, but what would be the point? The group will always be tiny, and scattered. I'd rather say thank you for being there at all, and for being who you are.
what a wonderful way to say thank you. i don't even know how to respond other than saying you're welcome and thank you for such a wonderful comment. if we all said thank you more often we would have reasons to say please more often. it's the benefit of gratitude. you are very welcome!
You, Brown Shugar are a beautiful person. I thank God for your life. This morning, instead of reading my word, I read your blog. It fulfilled my spiritual thirst. Continue being you…. The world is better because u came this way.
wow! what a wonderful way to say thank you. i appreciate your God-given thanks. my only option in life is to continue being me and doing what i do. i am happy this way. i don't think i've ever been another way. i would take all of the credit, but i'm not that way either.. it's all due to my grandmother. she raised me and nurtured me into a loving and caring adult. i thank God for her everyday. thank you for stopping, reading and commenting. it means a lot to me to know that my words have reached out and touched someone. i am ever grateful for you and your friendship.


Codify the IRS Independent Office of Appeals.
Increase Congressional oversight of the administrative review process.
Stop requiring FOIA requests for taxpayers seeking information about cases brought against them.
Create a comprehensive IRS customer service strategy that follows private sector examples, including established metrics for measuring success and meeting benchmarks.
Make permanent the matching grants for Volunteer Income Tax Assistance (VITA) partners.
Require the IRS notify affected taxpayers when Taxpayer Assistance Centers are close, as well as discussing other available options.
Clarify that IRS employees are able to discuss Low Income Taxpayer Clinics (LITC) with low-income taxpayers.
Require the IRS show probably cause when pursuing a violation of the Bank Secrecy Act.
Redefine "perishable property" as only those items that are "liable to perish," limiting the IRS' ability to seize certain property and sell it on the same day for less than the minimum bid requirement.
Prevent taxpayers who are 250 percent below the federal poverty level from being referred to private collection agencies.
Codify the Security Summit partnership between the IRS, state tax agencies, and tax industry officials.


Something about the idea of using biofuels --fuels derived from corn-- has always bugged me just a little bit. Sure, there are benefits to the environment and it lessens our reliance on fossil fuels and the middle east and it could be cheaper per gallon. But something about putting the juice from vegetables in my car rather than good old-fashioned traditional petroleum just does seems a little panzy-ish. Still, I was willing to do it, but now I'm not so sure. I've recently become aware of a real reason that it might not be a good idea globally.
The irony is extraordinary. At a time when world leaders are expressing grave concern about diminishing food stocks and a coming global food crisis, our government brings into force measures to increase the use of biofuels - a policy that will further increase food prices, and further worsen the plight of the world's poor.
Like Steven Tyler of Aerosmith once said, "Eat The Rich!" It's just unfortunate that the "rich" in this case turned out to be us.


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Tom Cruise Lip Sync Battles With Cruisian Intensity on 'Tonight Show'
Tom Cruise is making the promo rounds in support of Mission: Impossible — Rogue Nation, and last night (July 27) he visited The Tonight Show to chat and play one of Fallon's infamous games. Given Cruise's penchant for grinning, occasionally-manic FULL COMMITMENT, an epic round of "Lip Sync Battle" was a must.
As Jimmy explained the rules, Tom warmed up with some free-form laughter and muttered, "so ridiculous, I love it." Jimmy then catches the giggle bug himself (as he so often has, on both SNL and Tonight) but Tom pulls himself together to take on The Weeknd's "Can't Feel My Face." He does okay. But it's just a warm-up.
Jimmy challenges him with the Rolling Stones' "Undercover of the Night," which plays to the host's Mick Jagger-mimicking strengths. How will Tom ever top that? The Roots have an idea: Their keyboardist launches into the opening chords of Bob Seger's "Old Time Rock and Roll," which soundtracked Cruise's iconic Risky Business underwear romp.
But nope — after a brief intro, Tom revisits his youth with some Meat Loaf. Either Tom needed time to warm up or his passion for the track exceeds his evident Weeknd fandom, because he's now operating at maximum OST VIII-levels of fully realized personal power and charm.
The battle reaches its climax when the opponents unite to recreate one of Top Gun's most memorable scenes, delighting/mortifying an audience member in the process. You can watch it all go down in the video above, and revisit the cinematic karaoke number they're referencing below.
Next: Tom Cruise Reportedly Returning For 'Top Gun 2,' Drones Are Involved
Source: Tom Cruise Lip Sync Battles With Cruisian Intensity on 'Tonight Show'


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Review of WHATEVER IT TAKES by Winnie Griggs (see her website)
Leisure Books, December 2002
To keep Katie, the child she has taken into her heart, Maddy Potter is ready to do anything--even take on the 'propriety police' of Pepper Cloud, Missouri. And the best way to persuade them that she can provide a good environment for Katie is to find a husband--or rather a prospective husband. Maddy has been married and promised on her husband's grave never to do that again. A beau who can conveniently disappear after the adoption is complete is the perfect answer.
Clay Kincaid owes a family debt of honor to Maddy for her rescue of his sister and certainly doesn't mind spending time with the beautiful woman, but two concerns limit his complete enjoyment of the company. First, Maddy shares her home with several older women who are anything but orthodox: is that really the best for Katie. Second, despite Maddy's assurances, he wonders whether this could possibly be part of a complex matchmaking scheme on the part of his mother and sister. Regardless, he's willing to play along--up to a point. One thing for sure, he may play at being the fiance, but he's not going to be the groom.
Author Winnie Griggs delivers a charming historical novel set in the late 1800s. Griggs gives Maddy and her friends Olive, Adeline, and Fanny sparkling personalities and enjoyable dialogue. Clay starts off as a bit of a moralist, but gets his come-uppance along with a chance at love. Griggs's scenes of everyday life in a previous century in America seemed authentic--showing both the good and not-so-good elements of life in this earlier time.
WHATEVER IT TAKES is a funny novel with just enough of a bitter-sweet subtext to deliver an emotional wallop. Very nice.
Purchase WHATEVER IT TAKES from Amazon.com. (Available in paperback.)


[17:36] - Flight AWSE1499 is ready to depart LIMJ with a final destination of LIRQ.
[18:15] - Landed at -384fpm. With 834kgs of fuel onboard and a pitch angle of 8deg.
[18:17] - Arrived safely at LIRQ. We hope you enjoyed your flight!


Laughing Moon Farm is located on Eastsound Bay in the center of Orcas Island. We have over 20 acres of farmland and woodland with beautiful views of the water. We take great pride in caring for our animals, including several rare-breed cotswold sheep, native to Cotswold England and known by many as the "Gentle Giants" among sheep. While staying at Laughing Moon Farm, you will be located in the center of our property surrounded by the serenity of nature. Our new hand-crafted cottages have wood interiors, fireplaces, full kitchens with all the supplies, covered patios, TV-DVD players and BBQs. Whether you are a group of two, or a group of six, our cabins are ideal for friends and family alike. Get away!
Nestled in the heart of the San Juan Islands, it offers breath taking views, delicious food and a lively atmosphere. Sitting over looking the Orcas Island ferry landing, it is easy to see why this charming hotel has become an ideal spot for destination weddings. A great place to call home when exploring all of the islands.
Escape TV, E-mail, Phone & Fax! 80 pastoral acres, forest, ponds & meadows. Since 1985 Orcas' Premier Destination, meticulous & welcoming , famous breakfasts. AAA, 1000 Places to See, Select Registry, Unique Inns, Special Places, Karen Brown's.
Secluded log cabins on private beach are nestled among pristine old-growth forest. Furnished accommodations for 1-10 guests include full kitchens and wood stoves. No pets, TV's or phones. Families welcome. Open all year.
Orcas Island Getaway is the perfect escape for your next trip to the San Juan Islands. Located on a 3/4 acre parcel surrounded by towering native evergreens, you'll enjoy relaxing in this clean, comfortably remodeled 2 bedroom and 2 bath home.
45 beachfront acres, rustic cabins, camping & RV's. Hot tubs, sauna & massage. Waterfront Cafe. An island original: unspoiled, magical, naturally beautiful.
"View to die for" vacation rental home near Rosario Resort. Immaculate, well equipped 2 bedroom , den and 3 bathrooms. Sleeps 6.
Point Thompson is a truly unique property on almost 2 acres with over 600 feet of spectacular waterfront. Located on a private lane, beautiful cove beaches, privacy.
Exquisite architectural gem on 140 acre wildlife preserve, romantic alpine chalet, can sleep up to 6. Enjoy your private hot tub or campfire under the stars. 360 degree view from 'Sweetheart Hill'. Fully equipped kitchen, queen-size sleigh bed, & much more!


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Home > Statistics > Income and Consumption > Taxable incomes
Taxable incomes
Latest release:
Direct taxes went down by 1.5 per cent
In 2017, direct taxes and payments paid by income earners totalled EUR 29.9 billion, which was in nominal terms 1.5 per cent less than one year earlier. They paid EUR 18.5 billion in municipal taxes, EUR 5.5 billion in taxes on earned income, and EUR 2.8 billion in taxes on capital income. The share of the public broadcasting tax in taxes was EUR 489 million and that of sickness insurance contributions EUR 1.7 billion. The amount of municipal taxes decreased from the previous year by 1.4 per cent, income tax by 5.3 per cent and sickness insurance contributions by 14 per cent. In turn, the amount of taxes on capital income grew by 17.3 per cent and the public broadcasting tax by one per cent from the year before.
Next release:
Statistical releases will not be issued in English from these statistics in 2020.
Statistics on taxable incomes (formerly Statistics on income and property) describe the income subject to taxation, deductions, liabilities and taxation of private persons. The basic data of the statistics are drawn from the Tax Administration's database and cover all private persons who have received taxable income during the year. Income and taxation are examined by, inter alia, income brackets as well as age and gender. The total data also allow for regional examination upwards from the level of municipalities. The statistics are produced annually. As from statistical year 2005 they are available only on the Internet.
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capital income, cash income, dividends, earned income, income, tax allowances, tax revenue, taxable income, taxation, wages and salaries, wealth.
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Publication of income statistics postponed to next year
Statistics Finland will not publish income distribution statistics nor statistics on taxable income in December as previously planned because the statistical data on personal taxation produced by the Tax Administration for these publications is not yet ready.
Official Statistics of Finland (OSF): Taxable incomes [e-publication].
Helsinki: Statistics Finland [referred: 21.1.2020].
Access method: http://www.stat.fi/til/tvt/index_en.html


The significance of the sanctuary floor in relationship to the British monarchy was well illustrated by its prominence in the wedding of Prince William and Kate Middleton. Coronations and weddings would take place on this spot. It would have been visible during the coronation of Anne Boleyn on June 1, 1533 in Westminster Abbey.
No satisfactory explanation has been presented for Holbein's inclusion of this detail in the painting. A crucial clue is presented by an inscription in bronze letters set into the sanctuary pavement. This inscription is now largely lost, but two fifteenth century transcriptions allow the reconstruction of the original text.*The verses written along the perimeter of the large outer square date the floor to 1268 during the reign of Henry III and identify the Roman mosaic worker Odoricus as the maker.*Another part of the inscription, apparently placed on a strip around the four circles next to the central circle, predicts the duration of the world or the end of the primum mobile.* Around the central circle appears the inscription: Spericus archetypum, globus hic monstrat macrocosmum. Steven Wander has noted the ambiguity of this verse.* It is not clear whether "spericus" and "globus" refers to the central circle. As Wander observes, archetype and macrocosm were distinct concepts in medieval cosmography: "The archetype refers to the idea of the world in God's mind before its realization in matter. The macrocosm denotes this idea of the world after its formation in matter; it's the sensible world formed of the four elements."* Depending on one's understanding of the central inscription, either the central circle represents the archetypal macrocosm, or the pavement contrasts the archetype to the macrocosm. Despite this uncertainty about the translation of this central inscription, it clearly establishes the cosmological significance of the pavement as a diagram of the universe.
Even without the evidence of the inscription, the design of the floor can be seen as a diagram of the macrocosm. The pattern of circles and squares relates to a tradition of macrocosm diagrams which extends back at least to the encyclopedias of the early Middle Ages, and which visualizes cosmological ideas of world-harmony extending back to Pythagorean and Platonic thought of Antiquity.* Greek philosophers elaborated on the essential tetradic structure of the macrocosm and microcosm, correlating the four elements of the world to the four temperaments of man, the four seasons of the year to the four ages of man.
Variations of this pattern can be found in other major monuments of Renaissance art. As noted above, it appears on the floor of the Sistine Chapel directly beneath the Creation of Adam. Understanding the floor as the macrcosm adds a resonance with the juxtaposition of the floor as macrocosm to the creation of Adam as the microcosm. This symbolism reinforces the central meaning of the Creation of Adam in the ceiling and the chapel as a whole. Appropriately this symbolism articulates the central position of "Man" in Renaissance cosmology.
It is significant to see how Raphael has placed the Papal Arms as the center of his ceiling, while the center of the floor in Holbein's painting is covered by the anamorphic skull, the symbol of human mortality.
Understanding the floor as a symbol of the macrocosm has significance for our understanding of the painting as a whole.


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Saw II [Special Edition] [2 Discs] [Uncut] [DVD] [2005]
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Sadistic Horror
Saw II
2 Discs, DVD, Special Edition, Uncut
Saw 2 was one of the better entrys in the Saw franchise.
This review is from Saw II [Blu-ray] [2005]
as good, may be better than the original
Posted 11 years ago .
After watching the incredible SAW that graced our screens last year - it was a given that I would see the MUCH ANTICIPATED sequel. This film seems to have more of a story-line than the original... JIG-SAW is at it again and this time locks up 8 people inside an abandoned, creepy old house. They are trapped in the building and a lethal gas has been pumped into the house for a while. They have exactly 2 hours to each, find a room marked for their attention, crack the game needed to be played and won and inject the antidote into their systems. They also have the option to play each game a little "further and harder" in order to find a 2nd Antidote : perhaps for a friend they have made amongst the 8 strangers. Inevitably, going for the 2nd one - may end in death. To add an incredible dimension to the story, DONNIE WAHLBERG, who plays a cop in the film : catches JIG-SAW at the start of the film and then finds out that JIG-SAW has his son in he house. The race against time plays out awesomely in the film, as does the films running time and the fact that each and every character in the house is running closer to death from the lethal gas. DONNIE WALHBERG is awesome, as is the cast of basic unknows. TOBIN BELL (JIGSAW) is incredibly creepy. And finally : if you thought the original ending came at BREAK-NECK-SPEED... this one is going to hit you LIKE A SACK OF BRICKS TRAVELLING AT MACH 1... As is the basic rule for sequels : THE BODY COUNT IS ALWAYS MUCH HIGHER... THE DEATH SCENES ARE ALWAYS MORE ELABORATE AND OH YES... THERE WILL BE BLOOD!!!...
This review is from Saw II [WS] [DVD] [2005]
ready for round 2 ?
Jigsaw plays a game with a police detective in this one-played by Donnie Wahlberg. Jigsaw reveals some things about his past in this one as well. He's had 8 people locked up in an old house with a secret connection to each other-which turns out to be rather important to their survival. The only complaint I have is why couldn't Leigh Whannell have written all the scripts for this series, and Darren L. Bousmann directed 5 and 6? Don't get me wrong, I like the whole series, so far, but when directors/writers keep changing, the style, mood and looks of the films, tend to change as well, funny thing is that didn't hurt the storyline.
Great for a Sequel!
Like most people, when I watch the a sequel to a movie I like, I expect something great for the sequel and end up walking out disappointed or unimpressed (i.e. it was so-so). Saw II is a different story. I loved it. It's different from the first movie in that the main story line (that of the protagonist) is equally balanced with the story of the other tortured victims... but nevertheless, everything in the movie is done for a purpose. To continue to saga and absorb the irony. I'm not too fond of the human torture, which is a main feature of the movies...what makes it so frightening/disturbing, however, in this movie we learn more about Jigsaw, the serial killer's, past and his twisted but somewhat understandable ideology. The mystery feature to the movie is just as good as the first. Watch it and you secure your place as a Saw fan-- you won't be disappointed! (Note: I still like the plot of the first movie better than the second, however, overall the first and second movies are both comparable in terms of a quality watch)
redandblack6s
'I want to play a game!'
My wife and I love these movies, they just get better and better. This second installment picks up right where the other one left off. I say this is a great sequel, but they're really just one big movie seperated into segments. You can't skip one or you'll be confused. Plus, always make sure you get the unrated director's cuts, you don't want to miss anything. I highly recommend this and all the others!
gusvelasco94
EPIC HORROR!
Jigsaw locks a few unlucky people in a booby trapped shelter and they must find a way out before they inhale too much of a lethal nerve gas and die. But they must watch out, for the traps Jigsaw has set in the shelter lead to death also.
Greatest puzzle horror movie ever
The puzzles are bigger and the penalities are more gruesome. The group of people in this house have the absolute worst day of their lives and the ending......well, you'll never see it coming. If you liked the first one, you'll love the second. This will knock your sock off and when I mean that I mean the thrill of this movie
Oh yes there will be blood
Critics blasted Saw so much about not having alot of blood, that in the sequel Jigsaw's thurst for blood was worst than a vampire on crack. I love the twist that this movie has, because you already know that there will be big twist like the first. The tick is to figure it out before its explained...pure greatness


Oxygen Treatment may improve language, eye-contact, social interaction, irritability, or hyperactivity.
It is well known that most cancer cells do not like oxygen. Most tumours have blood supplies that leave parts of the tumour starved of oxygen, or "hypoxic", making them resistant to radiotherapy. The vessels are also leaky, stopping chemotherapy drugs penetrating deeply enough to kill the growth. This means that tumours well supplied with oxygen are actually more vulnerable.
Hyperbaric oxygen was first used 60 years ago to increase cellular oxygen delivery and thus overcome hypoxia as a cause of tumour radioresistance. This scientifically proved application of hyperbaric oxygen is now unused.
Michael Charter was diagnosed with prostate cancer, aged 53, and his prostate was removed in 1993. Then, 15 years later, Michael began to suffer symptoms.
'My first symptoms were bladder leakage,' he says. Michael's GP referred him to a urologist who said that little could be done. 'It was depressing,' says Michael,. 'From being sociable and outgoing, suddenly I was wetting myself, often in public. It was a terrible blow to my pride and self-esteem.' Deterioration was rapid. Within weeks of the first symptoms, Michael had passed blood in his urine, was suffering from painful bouts of cystitis and had bowel problems.
The Prime Cause and Prevention of Cancer (Revised Lindau Lecture) By OTTO WARBURG. Adapted from a lecture originally delivered by O. Warburg at the 1966 annual meeting of Nobelists at Lindau, Germany. English Edition by DEAN BURK*), National Cancer Institute, Bethesda, Maryland.
A facility to donate online is coming soon. In the meantime, should you wish to make a donation please contact Castle Craig directly.
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Jeff Robinov is Founder and CEO of Studio 8, a multi-platform media company funded in partnership with Fosun Group and Sony Pictures Entertainment. The company is based in Culver City, California on the Sony Pictures Entertainment lot and has $1 Billion in funding to produce a slate of 25 films in the next five years. Previously, Mr. Robinov served as an Executive at Warner Bros, starting his tenure at the company as Senior Vice President of Production and climbing the ranks to serve as President of Warner Bros. Pictures Group from November 2007 to July 2013.
Under Mr. Robinov's leadership, the division crossed the billion-dollar mark every year since 2002 in both domestic and international box office. Robinov helped oversee some of the most commercially successful and critically acclaimed films and franchises in recent memory, including The Dark Knight Trilogy (over $2.4 billion worldwide), The Hangover Series (over $1.4 billion worldwide), Inception (over $825 million worldwide), Argo (over $230 million worldwide) which won the Best Picture Oscar, and Gravity which recently surpassed $716 million worldwide.