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The first widely used solid-state negative resistance device was the tunnel diode, invented in 1957 by Japanese physicist Leo Esaki. Because they have lower parasitic capacitance than vacuum tubes due to their small junction size, diodes can function at higher frequencies, and tunnel diode oscillators proved able to produce power at microwave frequencies, above the range of ordinary vacuum tube oscillators. Its invention set off a search for other negative resistance semiconductor devices for use as microwave oscillators, resulting in the discovery of the IMPATT diode, Gunn diode, TRAPATT diode, and others. In 1969 Kurokawa derived conditions for stability in negative resistance circuits. Currently negative differential resistance diode oscillators are the most widely used sources of microwave energy, and many new negative resistance devices have been discovered in recent decades.
The first widely used solid-state negative resistance device was the tunnel diode