TokMan:Tokenize Manhattan Mask Optimization for Inverse Lithography
Yiwen Wu, Yuyang Chen, Ye Xia, Yao Zhao, Jingya Wang, Xuming He, Hao GENG, Jingyi Yu
Manhattan representations, defined by axis-aligned, orthogonal structures, are widely used in vision, robotics, and semiconductor design for their geometric regularity and algorithmic simplicity. In integrated circuit (IC) design, Manhattan geometry is key for routing, design rule checking, and lithographic manufacturability. However, as feature sizes shrink, optical system distortions lead to inconsistency between intended layout and printed wafer. Although Inverse Lithography Technology(ILT) is proposed to compensates these effects, learning-based ILT methods, while achieving high simulation fidelity, often generate curvilinear masks on continuous pixel grids, violating Manhattan constraints. Therefore, we propose TokMan, the first framework to formulate mask optimization as a discrete, structure-aware sequence modeling task. Our method leverages a Diffusion Transformer to tokenize layouts into discrete geometric primitives with polygon-wise dependencies and denoise Manhattan-aligned point sequences corrupted by optical proximity effects, while ensuring binary, manufacturable masks. Trained with self-supervised lithographic feedback through differentiable simulation and refined with ILT post-processing, TokMan achieves state-of-the-art fidelity, runtime efficiency, and strict manufacturing compliance on a large-scale dataset of IC layouts.