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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.
A methodology for SPICE-compatible modeling of nanoMOSFETs
17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation...
ABACUS: Test for MOSFET Tool
18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have...
Verification of the Validity of the MOSFET Tool
11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the...
Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics
22 Sep 2010 | Online Presentations | Contributor(s): Krishna Shenai
This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging...
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for...
Atomistic Simulations of Reliability
06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...
Exercise for MOSFET Lab: Device Scaling
28 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise explores device scaling and how well devices are designed.
Threshold voltage in a nanowire MOSFET
22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface...
Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior
Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits
Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis...
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts...
Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
MOSFet: First-Time User Guide
13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs...
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.