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Unformatted text preview: 3. Calculate the approximate band gap of Si from Eq. 3-23 and the plot of n i vs. 1/T (Fig. 3-17). Why is it moderately different from the measured 1.1 eV at room temperature? 4. The hole concentration in a silicon material is 4x10 5 /cm 3 at room temperature under equilibrium conditions. (a) What is the electron concentration? (b) Where is E F positioned relative to E i ? (c) Draw the energy band diagram for the material. Repeat for parts (a), (b) and (c) for the same sample if the temperature is 400 K. Refer to Fig. 3-17 to obtain the intrinsic carrier concentration at 400 K. Also, the band gap energy is reduced to 1.08 eV at 400 K....
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This note was uploaded on 12/01/2011 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
- Spring '08