To maximize the yield and throughput of any plasma process, there are four main factors to consider:
The quality of the process depends on several factors, with ion energy being the primary parameter regardless of whether the process is for etching, deposition or surface activation. Too little energy can slow down the process, while too much energy can increase the roughness of the finish. The angle of ions hitting the surface, especially in etching, can also affect the profile of the trench created.
The speed of the process is determined by the ion flux and ion energy. If the ion energy is high enough to allow for interaction with the surface, the ion flux becomes the main parameter controlling the speed. Overprocessing can reduce throughput and waste time, so accurate endpoint detection is crucial.
Without consistent and repeatable parameters, it is difficult to control the plasma and achieve consistent results. Changes in plasma parameters at certain stages of the process, such as ignition, can lead to inconsistent results and an uneven finish.
Achieving a uniform result all across the substrate is critical to maximizing the yield from the process. Measuring the spatial characteristics of the plasma is essential to creating a high-yield process.
Best for: Ion flux, spatial resolution, time resolution
Measures: ion density, electron temperature, plasma potential, ion flux
Best for: Ion Energy
Measures: Ion Energy, Ion Flux, Aspect Ratio, Deposition Rate
Best for: RF Calibration, RF Parameters, Live Process Monitoring, Fault Detection & Classification
Measures: RF Voltage, Current, Phase, Power and Impedance of the fundamental and harmonic frequencies. Also measures RF waveform and ion flux