Question Paper: MEMS Technology Question Paper - Dec 16 - Electronics Engineering (Semester 8) - Mumbai University (MU)
MEMS Technology - Dec 16
Electronics Engineering (Semester 8)
Total marks: 80
Total time: 3 Hours
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
Justify the statement that silicon based microelectronics is different than micro-fabrication (MEMS fabrication)
State various Chemical Vapor Deposition Techniques. Explain in brief any one of the techniques of Chemical Vapor Deposition for MEMS device fabrication.
Define Piezo-resistive property of single crystal silicon as MEMS material. Also define and justify that semiconductor material has high Gauge factor.
What is the resonant frequency Fo for the silicon cantilever beam of 2000$\mu m$ long and 200$\mu m$ wide and 1.5$\mu m$ thick? (Data: for silicon E = 190 GPa and The density is 2.39 g/cm$^3$)
Explain transduction pertaining to capacitive measurement, Piezo-resistive for MEMS. Also state different parameters on which this transduction depend.
Discuss fabrication process for DMD. Justify clearly choice of material, process parameters & sub-type of processes preferred
Justify the need of vacuum pressure in Physical Vapor Deposition (PVD). Explain in brief any one of the techniques of PVD for MEMS device fabrication. Also define the terms step coverage and shadowing.
Describe the representative process flow for fabricating the micro-heater. Also explain the operating principle of this MEMS device in detail with its analytical expression.
Explain the process integration for typical MEMS Device
Give two examples of combination of structural, sacrificial layers and enchants used in MEMS fabrication along with their applications
Explain what do you mean by Wafer bonding? State the need of the same. What are the different types of Wafer bonding?
Discuss MEMS reliability in detail.
6 Write a short note on (any three)
Advantages and limitations of surface micromachining